Bipolar transistor

Abstract

The invention discloses a bipolar transistor. An active area is isolated by shallow-trench field oxide. The bipolar transistor comprises a collector region, a base region and a transmission region, wherein the collector region is formed by a first conductive type foreign ion injection layer which are formed in the active area, and a buried layer formed by connection of two first conductive type pseudo-buried layers is connected to the bottom of the collector region, and the pseudo-buried layer is formed by injecting first conductive type foreign ions which are injected from the bottom of trenches at two sides of the active area; deep groove contact is manufactured in field oxide on the pseudo-buried layer to lead out a collector; the base region is formed by a second conductive type film which is formed on the collector region; and the transmission region is formed by first conductive type polycrystalline silicon which is formed on the base region. The bipolar transistor can reduce the device area, the parasitic effect, the number of photoetching layers and the process cost.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a bipolar transistor. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Si bipolar junction transistors (BJT) or SiGe heterojunction bipolar transistors (HBT) are good choices for UHF devices. [0003] Taking the NPN transistor as an example, th...

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Problems solved by technology

[0004] The existing bipolar transistor technology is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 2. The formation of collector pick-up depends on high-dose and high-energy ion implantation to lead out the buried layer of the collector area. , so it occupies a large device area; 3. The deep trench isolation process is complex and costly; 4. The number of photolithography layers in the transistor process is large

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