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GaN HEMT semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of GaNHEMT semiconductor devices and their preparation, can solve problems such as damage to the performance of metal gate electrodes, and achieve the effects of improving device performance, avoiding damage, and shortening distances

Inactive Publication Date: 2020-08-21
浙江集迈科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a GaN HEMT semiconductor device and a preparation method thereof, which are used to solve the problem of reducing the connection of the GaN HEMT semiconductor device by using a self-alignment process combined with a metal gate electrode-first process in the prior art. The input resistance will damage the performance of the metal gate electrode, etc.

Method used

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  • GaN HEMT semiconductor device and preparation method thereof
  • GaN HEMT semiconductor device and preparation method thereof
  • GaN HEMT semiconductor device and preparation method thereof

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Embodiment 1

[0049] This embodiment provides a method for manufacturing a GaN HEMT semiconductor device, using a gate-last process (the gate-last process is to prepare the source electrode and the drain electrode first, and then prepare the metal gate electrode) and form a gradually increasing from bottom to top Metal gate electrode, and using the metal gate electrode of this shape as a mask, secondary deposition forms the electrode supplementary layer of the source electrode and the drain electrode, thereby shortening the distance between the source electrode-metal gate electrode and the drain electrode-metal gate electrode, reducing the The access resistance of the source electrode and the drain electrode is reduced, and at the same time, since the metal gate electrode is prepared after the source and drain electrodes, the damage to the metal gate electrode caused by the preparation process of the source and drain electrodes is avoided, and the device performance is improved; In the proce...

Embodiment 2

[0077] Such as Figure 13 to Figure 14 As shown, this embodiment provides another method for preparing a GaN HEMT semiconductor device, which is basically the same as the method for preparing a GaN HEMT semiconductor device in Embodiment 1, except for steps S5 and S6, specifically:

[0078] Such as Figure 13 As shown, in step S5, in this embodiment, the SiN passivation layer 109 in the region from the source electrode 107 to the metal gate electrode 112 is selected to be removed, and the SiN passivation layer 109 in the region from the drain electrode 108 to the metal gate electrode 112 is retained. The SiN passivation layer 109 exposes the source electrode 107, the metal gate electrode 112 and the region between them, and patterned photolithography is used on the remaining part of the SiN passivation layer 109 and on the side of the source electrode 107 Glue 114 for protection. Any suitable method can be used to remove the SiN passivation layer 109, for example, wet BHF or...

Embodiment 3

[0083] This embodiment provides a GaN HEMT semiconductor device. The GaN HEMT semiconductor device can be prepared by the preparation method of the above-mentioned embodiment 1 or embodiment 2, but is not limited to the preparation methods described in embodiment 1 and embodiment 2, as long as it can be formed This GaN HEMT semiconductor device is enough. For the beneficial effects that the GaN HEMT semiconductor device can achieve, please refer to Embodiment 1 and Embodiment 2, and details will not be repeated below.

[0084] Such as Figure 12 and Figure 14 As shown, the GaN HEMT semiconductor device includes:

[0085] GaN HEMT semiconductor device thin film structure 100, including a semiconductor substrate layer 101, an AlGaN buffer layer 102, a GaN channel layer 103 and an AlGaN barrier layer 104 stacked in sequence;

[0086] Ohmic contact source electrode 107, drain electrode 108 and metal gate electrode 112 formed on the GaN HEMT semiconductor device thin film structu...

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Abstract

The invention provides a GaN HEMT semiconductor device and a preparation method thereof. The method comprises the steps: providing a GaN HEMT semiconductor device film structure; forming a source electrode and a drain electrode on the GaN HEMT semiconductor device thin film structure and depositing a SiN passivation layer; forming a metal gate electrode which is gradually increased from bottom totop in the SiN passivation layer; removing at least part of the SiN passivation layer; and depositing an electrode supplement layer on the surface of the structure formed in the previous step. A gate-last process is adopted, and a metal gate electrode which is gradually increased from bottom to top is formed; secondary deposition is carried out to form an electrode supplement layer of the source electrode and the drain electrode or an electrode supplement layer of the source electrode and the gate field plate; therefore, the distances between the source electrode and the metal gate electrode and between the drain electrode and the metal gate electrode are shortened, the access resistance of the source electrode and the drain electrode is reduced, the voltage withstanding performance of thedevice is improved, meanwhile, the metal gate electrode is prepared after the source electrode and the drain electrode, damage to the metal gate electrode by a source-drain electrode preparation process is avoided, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a GaN HEMT semiconductor device and a preparation method thereof. Background technique [0002] The third-generation semiconductor material, that is, Wide Band Gap Semiconductor (WBGS for short) semiconductor material is developed after the first generation of silicon, germanium and the second generation of gallium arsenide and indium phosphide. Among the third-generation semiconductor materials, gallium nitride (GaN) has wide bandgap, direct bandgap, high breakdown electric field, low dielectric constant, high electron saturation drift velocity, strong radiation resistance and good chemical stability Such superior properties as germanium, silicon, and gallium arsenide have become key semiconductor materials for the manufacture of new-generation microelectronic devices and circuits. In particular, it has unique advantages in high temperature, high power, high fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335H01L29/423H01L29/20
CPCH01L29/2003H01L29/42316H01L29/66462H01L29/778
Inventor 马飞冯光建程明芳
Owner 浙江集迈科微电子有限公司
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