According to the enhanced high-
electron-mobility
transistor and the preparation method thereof provided by the invention, the P-type
delta doping layer with higher
doping concentration is arranged in the P-type gate structure, so that an
electron barrier is formed in the P-type gate energy band structure, and in the working process of a device, the
electron barrier can prevent electrons from flowing in the gate structure, so that electric leakage is reduced, and the reliability of the device is improved. Meanwhile, bombardment of electrons to gate
metal is avoided,
and gate reliability is improved; meanwhile, the
delta doping layer can form hole potential wells in the P-type gate energy band structure one by one, and
free flow of holes cannot be greatly influenced, so that the holes are freely injected into the device, and relatively low working on-resistance of the device is ensured; the inserted P-type
delta doping layer can reduce the overall resistivity of the P-type gate structure to a certain extent, reduce the
input resistance, and facilitate the improvement of the
crystal quality of the overall P-type gate structure; and the P-type
delta doping process can be compatible with the existing traditional epitaxial
process equipment, and the process is simple and easy to implement.