One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode

A ferroelectric thin film, effective resistance technology, applied in the field of microelectronic materials, can solve the problems of not considering effective resistance modulation, and introduce ferroelectric properties and semiconductor properties at the same time, achieve short polarization time, improve anti-fatigue performance, extremely Small area effect

Inactive Publication Date: 2011-08-17
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the only ferroelectric semiconductor memory currently available simply utilizes the ferroelectricity of materials, or integrates ferroelectric materials with semiconductor materials, and does not introduce both ferroelectric properties and semiconductor properties in a single ferroelectric material. Some non-volatile, non-destructive memories

Method used

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  • One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode
  • One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode
  • One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] On Pt / TiO 2 / Ti / SiO 2 / Si substrates grow BiFeO 3 (200 nm) and Bi 0.85 Nd 0.15 FeO 3 (200 nm) thin film, as attached figure 1 shown.

[0032] (1) The epitaxial ferroelectric film was grown by magnetron sputtering method, and Pt was used as the top and bottom electrodes, and the Pt / TiO 2 / Ti / SiO 2 / Si substrates grow BiFeO 3 (200 nm) and Bi 0.85 Nd 0.15 FeO 3 (200 nm) films, followed by BiFeO 3 and Bi 0.85 Nd 0.15 FeO 3 The Pt top electrode is grown on the thin film.

[0033] (2) The specific growth conditions are: control Pt / TiO 2 / Ti / SiO 2 / Si substrate temperature is 400°C, in O 2 The pressure in the atmosphere is 1Pa, the sputtering power is 500W, and annealing is performed at 400°C for 30 minutes after the deposition is completed.

[0034] (3) Using XRD diffraction and ferroelectric tester to test the prepared BiFeO 3 (200nm) / Pt / TiO 2 / Ti / SiO 2 / Si film and Bi 0.85 Nd 0.15 FeO 3 (200nm) / Pt / TiO 2 / Ti / SiO 2 / Si thin film was analyzed, and th...

Embodiment 2

[0039] By Bi 0.8 Ca 0.1 FeO 3-d (100 nm) / SrRuO 3 (50 nm) / (001) c SrTiO 3 Thin film as an example:

[0040] (1) Preparation of Bi 0.8 Ca 0.1 FeO 3-d and SrRuO 3 target, where SrRuO 3 (50 nm) as top and bottom electrodes (100) c SrTiO 3 as a substrate.

[0041] (2) The film was prepared by pulsed laser deposition method, using (001) c SrTiO 3 As a substrate, SrRuO 3 (50 nm) as the top and bottom electrodes, grow epitaxial ferroelectric films, first at (100) c SrTiO 3 SrRuO grown on substrate 3 (50 nm) bottom electrode thickness, followed by SrRuO 3 (50 nm) / (100) c SrTiO 3 Growth Bi 0.8 Ca 0.1 FeO 3-d The film thickness is 100 nm, and finally again in Bi 0.8 Ca 0.1 FeO 3-d Growth of SrRuO on Thin Films 3(50 nm) as the top electrode.

[0042] (3) Specific growth method: install the substrate and the target in the growth chamber, and then use a mechanical pump and a molecular pump to evacuate it. Before deposition, the substrate temperatur...

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PUM

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Abstract

The invention discloses a one-phase ferroelectric film capable of regulating effective resistance by ferroelectric polarization, a preparing method of the one-phase ferroelectric film and an effective resistance regulation mode. The one-phase ferroelectric film comprises B-bit-doped Bal-xSrxTil-yByO3, Pb(Fe1-yBy)O3, Pb(Co1-yBy)O3, (Pb1-xAx)(ZryTi1-y)O3, A-bit-doped Y1-xAxMnO3, Bil-xAxFeO3, and Bi4-xAxTi3O12. The one-phase ferroelectric film is prepared by using film preparing methods, such as pulsed laser deposition (PLD), laser molecular beam epitaxy (LMBE) and magnetron sputtering. The prepared ferroelectric film is 0.4-1000 nanometer in the thickness and has larger conductance and leakage current, as well as ferroelectricity and semiconductor performance. The invention provides a method for improving the antifatigue performance of the one-phase ferroelectric film. Turning frequency (x) of the ferroelectric polarization in the method can be increased to 102-1010; and the ferroelectric polarization is turned to regulate the effective resistance of the one-phase ferroelectric film.

Description

technical field [0001] The invention belongs to the field of microelectronic materials, regulates the effective resistance of a single-phase ferroelectric thin film through ferroelectric polarization, and prepares a new type of information storage unit for non-volatile storage and non-destructive readout. Background technique [0002] Ferroelectric materials refer to materials with spontaneous polarization at the Curie temperature, and their spontaneous polarization direction can be greater than the ferroelectric coercive field (E c ) to reorient under an applied electric field. The positive and negative polarization directions of ferroelectric materials can represent binary signals "1" and "0", and the switching speed of ferroelectric polarization far exceeds the switching speed of magnetic moments in ferromagnetic materials, so ferroelectric materials can be used to prepare ferroelectric memories . As an important member of piezoelectric materials, ferroelectric material...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C14/28C23C14/35C23C14/06
Inventor 陈孝敏刘璐袁国亮
Owner NANJING UNIV OF SCI & TECH
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