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A kind of molecular ferroelectric thin film and its solution soaking growth method

A technology of molecular ferroelectricity and growth method, applied in chemical instruments and methods, other chemical processes, etc., can solve problems such as molecular ferroelectric thin films that have not been introduced

Inactive Publication Date: 2016-03-02
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are no Chinese patents introducing molecular ferroelectric thin films based on organic-inorganic compound ferroelectrics

Method used

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  • A kind of molecular ferroelectric thin film and its solution soaking growth method
  • A kind of molecular ferroelectric thin film and its solution soaking growth method
  • A kind of molecular ferroelectric thin film and its solution soaking growth method

Examples

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Effect test

example 1

[0043] Preparation of (111)Pt / TiO 2 / SiO 2 Triglycine sulfate (hereinafter referred to as TGS) ferroelectric film with a thickness of 1.0um on the Si substrate:

[0044] (1): Preparation of TGS solution and (111)Pt / TiO 2 / SiO 2 / Si substrate cleaning. Using deionized water as a solvent, prepare a saturated solution of TGS and a solution with a mass concentration of TGS of 0.1 g / L. The whole process of preparing the solution was carried out at a constant temperature of 24°C. Cut (111)Pt / TiO with a size of 10mm×10mm 2 / SiO 2 / Si substrate, placed in deionized water, ultrasonically cleaned for 15 minutes, placed in absolute ethanol, ultrasonically cleaned for 15 minutes, and dried with N 2 Air dry.

[0045] (2): Spin-coating method on (111)Pt / TiO 2 / SiO 2 A uniform TGS thin film layer for crystal growth was prepared on the / Si substrate. Place (111)Pt / TiO 2 / SiO 2 The / Si substrate is placed in the center of the turntable of the spin coater, and the dispensing time o...

example 2

[0050] In (111)Pt / TiO 2 / SiO 2 Diisopropylamine bromide (hereinafter referred to as DIPAB) ferroelectric film with a thickness of 500nm was prepared on Si substrate.

[0051] (1): Preparation of DIPAB solution and (111)Pt / TiO 2 / SiO 2 / Si substrate cleaning. Prepare a saturated solution of DIPAB with analytically pure ethanol as a solvent. The whole process of preparing the solution was carried out at a constant temperature of 10°C. Cut (111)Pt / TiO with a size of 20mm×20mm 2 / SiO 2 / Si substrate, placed in deionized water, ultrasonically cleaned for 15 minutes, placed in absolute ethanol, ultrasonically cleaned for 15 minutes, and dried with N 2 Air dry.

[0052] (2): A uniform DIPAB film layer for crystal growth is prepared by dipping-pulling method. Set (111)Pt / TiO 2 / SiO 2 / Si substrate in the saturated DIPAB solution prepared in step (1), after soaking for 5 minutes, select the parameters of the dipping-pulling machine as the pulling rate is 0.01mm / min, and lif...

example 3

[0056] Preparation of imidazole perchlorate C with a thickness of 300 nm on a PET-ITO substrate 3 N 2 h 5 ClO 4 (hereinafter referred to as Im) ferroelectric thin film.

[0057] (1): Preparation of Im solution and cleaning of PET-ITO substrate. Using analytically pure acetone as a solvent, Im saturated solution was prepared, and deionized water was slowly added to Im saturated solution until its mass concentration was 90% of the saturated state. Another container preparation Im mass concentration is the solution of 50g / L. The whole process of preparing the solution was carried out at 0°C. Cut a PET-ITO substrate with a size of 30mm×30mm, put it in deionized water, and ultrasonically clean it for 15 minutes, put it in absolute ethanol, and ultrasonically clean it for 15 minutes, and dry it with N 2 Air dry.

[0058] (2): A uniform Im film layer for crystal growth was prepared on a PET-ITO substrate by a spin coating method. Put the PET-ITO substrate in the center of the...

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Abstract

The invention discloses a molecular ferroelectric film and a method of solution soaking growth thereof. The film is a crystal film, has ferroelectricity, and is composed of organic-inorganic compound molecular ferroelectrics. A molecular ferroelectric solution contacts with a clean substrate, and uniformly spreads and evaporates on the substrate to obtain a uniform film; the prepared uniform film is allowed to contacts with the molecular ferroelectric solution with a mass concentration being not less than 90% of its saturation concentration for a certain period. The meaning of the present invention is that the molecular ferroelectric film prepared by a solution soaking growth method has good ferroelectricity, can realize reversal of the polarization direction of any specific area by using an external electric field, and thus realize ferroelectric effect-based data storage. The molecular ferroelectric film of the invention has potential application value in the ferroelectric memory field.

Description

technical field [0001] The invention belongs to the field of ferroelectric thin film materials, and relates to a molecular ferroelectric thin film and a solution soaking growth method thereof. Background technique [0002] Ferroelectric materials refer to materials that have spontaneous polarization below the Curie temperature, and the direction of their spontaneous polarization can be reoriented under an applied electric field greater than the ferroelectric coercive field. Ferroelectric materials are widely used and can be used in the preparation of ferroelectric RAM, ferroelectric field effect transistors, piezoelectric sensors, nonlinear optical components and so on. The principle of data storage based on the ferroelectric effect is to use an external electric field to control the polarization direction of a small region in a ferroelectric as a different storage state. [0003] The basic principle of the solution method is to dissolve the raw material (solute) in the sol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/00
Inventor 袁国亮马赫常磊高文秀
Owner NANJING UNIV OF SCI & TECH
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