Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A cspbbr induced by tensile strain 3 ferroelectric single crystal thin film method

A single crystal thin film, tensile strain technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of cumbersome preparation process, complicated way of applying stress, and failure to meet the use requirements, etc., to achieve operational Simple, low-cost effect

Active Publication Date: 2022-04-08
NANJING UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Li et al. CsPbBr 3 After cooling to 77K, it was found that its structure was an orthorhombic phase and the existence of ferroelectricity was detected. However, when the temperature reached 298K, its crystal structure returned to a cubic structure, which could not meet the needs of room temperature and higher temperatures (Xia Li, et al.Evidence for Ferroelectricity of All-Inorganic Perovskite CsPbBr 3 QuantumDots, Journal of the American Chemical Society, 2020, 142(7): 3316-3320)
Zhao and his team through the tetragonal perovskite CsPbBr 3 Applying hydrostatic pressure from 0GPa to 19GPa optimizes the crystal geometry and obtains strong ferroelectricity. However, the method of applying stress is relatively complicated, and the equipment required for the experiment requires high precision (Yu-Qing Zhao, et al. Pressure-Induced Strong Ferroelectric Polarization in Tetra-Phase Perovskite CsPbBr 3 , Physical Chemistry Chemical Physics,2018,20(21):14718-14724)
Lu et al. combined in-situ preparation with controllable mechanical stretching, and prepared a polymer composite film with strong emission polarization photoluminescence by embedding perovskite nanocrystals. However, the preparation process is cumbersome and stretching The object needs to be further expanded, and the research on its ferroelectric properties has not yet been involved (Wen-Gao Lu, et al. Strong Polarized Photoluminescence from Stretched Perovskite-Nanocrystal-Embedded Polymer Composite Films, Advanced Optical Materials, 2017,5(23):1700594)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A cspbbr induced by tensile strain  <sub>3</sub> ferroelectric single crystal thin film method
  • A cspbbr induced by tensile strain  <sub>3</sub> ferroelectric single crystal thin film method
  • A cspbbr induced by tensile strain  <sub>3</sub> ferroelectric single crystal thin film method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A CsPbBr induced by tensile strain 3 The method for ferroelectric single crystal thin film, the operation link of described method is as follows:

[0043] Link 1, CsPbBr 3 Single crystal preparation

[0044] (1) CsBr and PbBr with a molar ratio of 1:1 2 The mixture of was dissolved in dimethylformamide (DMF) to form a supersaturated solution with a concentration of 1.5 mol / L, and was fully stirred at 70°C.

[0045] (2) The supersaturated solution was heated to 150°C, and the suspended insoluble matter was filtered out, and the solution was gradually cooled to 70°C and kept for 10 hours to grow seed crystals.

[0046] (3) Prepare a new supersaturated solution according to step (1), put the seed crystal obtained in step (2) into it to obtain a larger seed crystal, repeat three times and then put the seed crystal into anti-solvent toluene to keep room temperature High quality CsPbBr of desired size can be obtained in 7 days 3 For a single crystal, the side length of t...

Embodiment 2

[0066] This embodiment prepares CsPbBr in the same manner as in Example 1 3 Single crystal thin film is also stretched and tested in the same manner as in Example 1, the difference being that:

[0067] In link 2 step (5), preferably, after the second thinning treatment, CsPbBr 3 The thickness of the single crystal thin film is 50nm.

[0068] In link 4 step (1), when the strain amount is 1.1%, its saturated ferroelectric polarization is 0.10μC / cm 2 ; When the strain amount is 3%, its saturated ferroelectric polarization is 0.18μC / cm 2 ; When the strain is 6%, its saturated ferroelectric polarization is 0.27μC / cm 2 ; When the strain amount is 9.8%, its saturated ferroelectric polarization is 0.42μC / cm 2 . Test obtains this embodiment CsPbBr 3 The XRD patterns of the single crystal film before and after stretching and during stretching are as follows: image 3 As shown, the data of the lattice constant and its crystal system, point group, saturated ferroelectric polarizati...

Embodiment 3

[0070] A CsPbBr induced by tensile strain 3 The method for ferroelectric single crystal thin film, the operation link of described method is as follows:

[0071] Link 1, CsPbBr 3 Single crystal preparation

[0072] (1) CsBr and PbBr with a molar ratio of 1:1 2 The mixture of was dissolved in dimethylformamide (DMF) to form a supersaturated solution with a concentration of 1.5 mol / L, and was fully stirred at 70°C.

[0073] (2) The supersaturated solution was heated to 150°C, and the suspended insoluble matter was filtered out, and the solution was gradually cooled to 70°C and kept for 10 hours to grow seed crystals.

[0074] (3) Prepare a new supersaturated solution according to step (1), put the seed crystal obtained in step (2) into it to obtain a larger seed crystal, repeat three times and then put the seed crystal into anti-solvent toluene to keep room temperature High quality CsPbBr of desired size can be obtained in 7 days 3 For a single crystal, the side length of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for obtaining CsPbBr through tensile strain induction 3 The method of ferroelectric single crystal thin film, through the CsPbBr of any crystal plane with a thickness of 2 nm~100 nm 3 A tensile strain of 1.1%~9.8% is applied to one crystal direction of the surface of the single crystal thin film or for (100) c , (010) c or (001) c CsPbBr with Three Pseudo-cubic Facets 3 The two mutually perpendicular crystal orientations on the surface of the single crystal film simultaneously apply an equal amount of 0.68%~6.24% tensile strain, which induces the CsPbBr 3 The single crystal thin film transforms from a high-symmetry structure paraelectric phase to a low-symmetry structure ferroelectric phase, and then obtains CsPbBr with ferroelectric properties 3 single crystal film. The present invention avoids the use of complex means such as element doping, and can directly obtain CsPbBr with ferroelectric properties at room temperature through a simple mechanical stretching method 3 Single crystal thin film, and then effectively control the CsPbBr 3 The photoelectric conversion efficiency can further improve the CsPbBr 3 Luminescence and other properties of the base device.

Description

technical field [0001] The invention relates to the field of ferroelectric perovskite technology, in particular to a CsPbBr ferroelectric perovskite induced by tensile strain 3 method for ferroelectric single crystal thin films. Background technique [0002] In recent years, all-inorganic halide perovskites have become a new generation of highly competitive optoelectronic functional materials due to their excellent stability and optoelectronic properties, and have been widely used in solar cells, photodetection, light-emitting diodes, LEDs and other fields. Among them, the all-inorganic perovskite CsPbBr 3 Due to its excellent high temperature and high humidity resistance, low production cost, high light absorption coefficient, high carrier mobility and high open circuit voltage, it has attracted great attention from researchers. [0003] At present, the vast majority of semiconductor and microelectronic devices can be prepared from the material Si, including N-type semico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/00C30B29/12C30B29/64C30B7/00
CPCC30B33/00C30B29/12C30B29/64C30B7/00
Inventor 袁国亮万磊赵泽恩马晓姿
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products