4 results about "Polarization density" patented technology

The present invention provides a nitride semiconductor device that can introduce Mg at a high concentration while keeping the threshold low. [Solution] The normally-off transistor of the nitride semiconductor device comprises a gate insulating film provided on the first surface side of the nitride semiconductor substrate, a gate electrode provided on the gate insulating film, a p-type layer facing the gate electrode with the gate insulating film in between, and a polarization-doped layer facing the gate electrode with the p-type layer in between and in contact with the p-type layer. The Mg concentration of the p-type layer is 1 × 10⁻⁶ 18 cm -3 The above 1 x 10 20 cm -3 The following applies: The effective acceptor concentration in the p-type layer is Np(cm -3 Let the thickness of the p-type layer be dp (nm) and the polarization density of the polarization-doped layer be Npol (cm -3 If we let ) be the thickness of the polarization-doped layer be dpol (nm) and the aluminum (Al) concentration on the surface of the polarization-doped layer be Nal, then equations (1) and (2) hold true, respectively.

The purpose of this invention is to provide an optical laminate that exhibits low strain during bending, high flexibility, and excellent oblique reflectivity, particularly suitable for flexible displays. The optical laminate comprises, in sequence, a retardation film, a polarizer, and a transparent protective film, wherein the aforementioned retardation film contains a polarizer having a polarization density of 100 g / m². 2 A substrate film with a permeability of more than 24 hours and a liquid crystal curing film formed on the substrate film, wherein the thickness of the liquid crystal curing film is more than 0.5 μm and less than 3 μm, and satisfies the following formulas (1) and (2) in a single layer, wherein the aforementioned polarizer is composed of a polyvinyl alcohol resin film containing a dichroic pigment, the aforementioned transparent protective film has a total light transmittance of more than 90% and a 380 nm transmittance of less than 30%, and the aforementioned phase difference film, the aforementioned polarizer and the aforementioned transparent protective film are adjacent to each other through an adhesive layer. Re(450) / Re(550)≤1.00(1) 1.00≤Re(650) / Re(550)(2) [where Re(λ) represents the in-plane phase difference value at wavelength λ].

Various arrangements for cross-polarization interference mitigation are detailed herein. A baseline cross-polarization interference density limits of a user terminal (UT) and a baseline throughput of the UT can be determined. An adjustment value can then be determined for an intended polarization (co-pol) isotropic radiated power (EIRP) density, such that the cross-polarization (x-pol) interference density limits are not exceeded. After determining the baseline throughput, an effective co-pol EIRP density of the UT can be set based on the adjustment value. After adjusting the effective co-pol EIRP density of the UT, an adjusted spectral efficiency of the UT can be determined resulting from the adjusting the EIRP density. Finally, an allocated bandwidth to the UT can be adjusted such that a resulting adjusted throughput of the UT at the adjusted spectral efficiency matches the baseline throughput.

Various arrangements for cross-polarization interference mitigation are detailed herein. A baseline cross-polarization interference density limits of a user terminal (UT) and a baseline throughput of the UT can be determined. An adjustment value can then be determined for an intended polarization (co-pol) isotropic radiated power (EIRP) density, such that the cross-polarization (x-pol) interference density limits are not exceeded. After determining the baseline throughput, an effective co-pol EIRP density of the UT can be set based on the adjustment value. After adjusting the effective co-pol EIRP density of the UT, an adjusted spectral efficiency of the UT can be determined resulting from the adjusting the EIRP density. Finally, an allocated bandwidth to the UT can be adjusted such that a resulting adjusted throughput of the UT at the adjusted spectral efficiency matches the baseline throughput.