35 results about "Polar crystal" patented technology

The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation.

According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means (330) allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation (2) of pre-determined frequency lying in said frequency band of use and means of control (22) apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

Provided is a semiconductor device fabrication apparatus comprising:a filter which contains a polar crystal, and filters pure water or a liquid containing pure water as a solvent; anda working section which has a pressing mechanism configured to apply a pressure to said filter, and supplies the filtered pure water or the filtered liquid containing pure water as a solvent to a surface of an object to be polished or cleaned, thereby performing a polishing process or cleaning process.

The invention provides a battery coating film slurry, a battery separator, a secondary battery and their respective preparation methods. The preparation of the battery coating film slurry includes: providing a polymer, the polymer including polyvinylidene fluoride and a fluorine-containing polymer; providing a nucleating agent; combining the polymer with the nucleating agent to obtain a slurry polymer; and preparing the battery coating film slurry based on the slurry polymer. Through the above technical solution, the present invention designs the battery coating film slurry, and adopts a non-aqueous system, which can not only bond the diaphragm and the pole piece together, improve the hardness of the battery, but also the crystal form of the polymer prepared Polar crystal transformation, more complete crystal structure and higher crystallinity, smaller swelling ratio, better bonding performance; the manufactured battery has smaller internal resistance and better cycle performance.

According to one aspect, the invention relates to a terahertz modulator to be used in a given frequency band of use. Said modulator comprises a polar semi-conductor crystal (330) having a Reststrahlen band that covers said frequency band of use, and comprising at least one interface with a dielectric means; coupling means (330) enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation (2) having a pre-determined frequency within said band of use; and control means (22) that can modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modifying the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

The invention discloses a polar crystal La3SbS5Cl2 and a preparation method thereof, and belongs to the field of artificial crystals. According to the present invention, the crystal is an acentric structure sulfur-chlorine mixed anion compound, the crystal system is a monoclinic system, the space group is Cc, and the unit cell parameters comprise that a is 22.259(3) angstrom, b is 7.0964(11) angstrom, c is 7.1605(9) angstrom, beta is 99.056(7) angstrom, and the unit cell volume V is 1117.0(3) angstrom3; and the preparation method comprises: carrying out a solid phase reaction on elemental lanthanum, elemental antimony, antimony trichloride and elemental sulfur under a vacuum condition.

The invention provides a battery coating film slurry, a battery separator, a secondary battery and their respective preparation methods. The preparation of the battery coating film slurry includes: providing a polymer unit, the polymer unit comprising vinylidene fluoride and a fluorine-containing polymer unit , providing a nucleating agent, adding the nucleating agent during the polymerization of the polymerization unit to obtain a modified polymer; and preparing the battery coating film slurry based on the modified polymer. Through the above technical solution, the present invention designs the battery coating film slurry, and adopts a non-aqueous system, which can not only bond the diaphragm and the pole piece together, improve the hardness of the battery, but also the crystal form of the polymer prepared Polar crystal transformation, more complete crystal structure and higher crystallinity, smaller swelling ratio, better bonding performance; the manufactured battery has smaller internal resistance and better cycle performance. The water-based system is used to disperse the polymer, which solves the shortcomings of the oil-based system for preparing copolymers, gives full play to the advantages of water-based polymer coating products, and further improves the environmental protection effect.

Provided are a mixed aqueous dispersion of polyimide-fluororesin-polar crystal particulates with excellent handleability (e.g. safety, environmental burden, equipment cost) as well as excellent adhesion performance and heat resistance performance without the use of an organic solvent, and a method of producing the same, and a new method of coating. A mixed aqueous dispersion of polyimide-fluororesin-polar crystal particulates according to the present invention comprises a polyimide, fluororesin, polar crystal particulates, and water.

The invention provides a transparent and highly electrically active polyvinylidene fluoride-based composite material and a preparation method thereof, which belong to the field of polymer materials and advanced nanometer composite materials. The composite material is obtained by blending polyvinylidene fluoride, ionic liquid and clay at a mass ratio of 100:0.05-10:0.01-3. The invention also provides a preparation method of a transparent and highly electrically active polyvinylidene fluoride-based composite material. The composite material of the present invention has high permeability and 100% polar crystals; in addition, the clay can inhibit the migration of the ionic liquid under the electric field and reduce the dielectric loss of the composite material, which broadens its potential as a piezoelectric application of materials.

A method of growing a group III nitride crystal structure comprises: providing a silicon substrate (12); forming a first mask (10) on the substrate, the mask having a plurality of apertures (14) through it each exposing a respective area of the silicon substrate; etching the silicon exposed by each of the apertures to form a respective recess (16) having a plurality of facets (18, 20, 22, 24); depositing a second mask over some of the facets of each recess leaving at least one of the facets (22) of each recess exposed; and growing group III nitride on the exposed facets (22) and then over the substrate to form a continuous layer.

The invention belongs to the technical field of semiconductor material preparation, and provides a metal organic compound chemical vapor deposition (MOCVD) process on SiO 2 A method for preparing a nonpolar a-plane GaN epitaxial layer from a substrate. SiO 2 The substrate is nitrided at 1200‑1300°C under the condition of high temperature and large ammonia gas flow rate of 4000‑4500 sccm. After the treatment, SiO 2 a-Si with close-packed hexagonal structure formed on the substrate surface 3 N 4 Thin layer; a-plane oriented GaN crystal nucleus layer is grown on the thin layer, and finally a-plane GaN epitaxial layer is grown on the basis of non-polar crystal nucleus. Compared with the widely used polar c-plane GaN, the non-polar a-plane GaN-based device eliminates the quantum confinement Stark effect caused by the polarization effect, has high internal quantum efficiency, and has no light emission at high current density. Advantages such as wavelength drift.