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Terahertz modulator

一种调制器、太赫兹的技术，应用在太赫兹辐射的调制器领域，能够解决控制有限等问题

Inactive Publication Date: 2014-04-16
CENT NAT DE LA RECH SCI (C N R S)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the results in this literature show, this control is limited, including at lower temperatures
Also, at ambient temperature, this transmission is known to be limited to 0.2% of the maximum

Method used

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Examples

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Embodiment Construction

[0043] figure 1 is a schematic diagram schematically showing a modulator according to the invention in an example of an embodiment. In this example, incident terahertz radiation 2 of a predetermined frequency is reflected by a terahertz modulator 1 according to the invention to give reflected terahertz radiation 3, according to a control signal S(t), e.g. signal to change the intensity of the reflected terahertz radiation 3 relative to the intensity of the incident terahertz radiation 2 . The modulator 1 generally comprises a polar crystal 10 , control means 20 and coupling means 30 . A control signal S(t) is supplied to the control means 20 to modulate the intensity of the reflected radiation as a function of time. As will be detailed below, the control device 20 may be optical or electrical. The polar crystal 10 includes a dielectric medium ( figure 1 not shown in ), the dielectric medium is eg vacuum, air or a material that behaves like a dielectric around the predeterm...

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Abstract

According to one aspect, the invention relates to a terahertz modulator to be used in a given frequency band of use. Said modulator comprises a polar semi-conductor crystal (330) having a Reststrahlen band that covers said frequency band of use, and comprising at least one interface with a dielectric means; coupling means (330) enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation (2) having a pre-determined frequency within said band of use; and control means (22) that can modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modifying the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

Description

technical field [0001] The present invention relates to active components in the terahertz frequency domain. More specifically, the invention relates to modulators for terahertz radiation. Background technique [0002] The terahertz domain is generally defined by radiation with frequencies between 0.1 and 30 THz. This frequency band covers both the electronic domain and the photonic domain. Devices in the terahertz domain suffer from inherent operational limitations: the operating frequency is too high for electron-based components, and the energy of photons is too low to work efficiently. Nevertheless, this frequency domain has great application potential, for example in the field of telecommunications where the frequency range normally allocated for telecommunications tends to be saturated. Especially in the United States, allocations in the frequency range up to 0.3 THz are saturated. This application potential is encouraging the development of components, especially ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
CPCG02F2203/13G02F1/00G02F1/01H01L33/58H01L33/06G02F1/0126
Inventor S·瓦桑F·帕尔多J-L·珀卢阿尔J-J·格雷费A·阿尔尚博F·马基耶
Owner CENT NAT DE LA RECH SCI (C N R S)
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