103 results about "Dielectric function" patented technology

In a substantially planar circuit, the conductors are separated by an inorganic material with a dielectric constant of less than about 3.0. The dielectric layers are formed in a process that includes defining trenches and / or vias for the conductors by imprinting an initially planar layer of a radiation curable composition. The imprinting die is preferably UV transparent such that the composition is UV cured while the imprint die is in place. The curable composition includes an organic modified silicate compound and a second decomposable organic component, the latter forming nanometer scale pores as the organic compounds are subsequently decomposed to provide a polysilicate matrix. The pores reduce the effective dielectric constant from that of otherwise dense silicon dioxide.

A planar STT-MRAM comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

A self-aligned gate cap dielectric can be employed to form a self-aligned contact to a diffusion region, while preventing electrical short with a gate conductor due to overlay variations. In one embodiment, an electroplatable or electrolessly platable metal is selectively deposited on conductive materials in a gate electrode, while the metal is not deposited on dielectric surfaces. The metal portion on top of the gate electrode is converted into a gate cap dielectric including the metal and oxygen. In another embodiment, a self-assembling monolayer is formed on dielectric surfaces, while exposing metallic top surfaces of a gate electrode. A gate cap dielectric including a dielectric oxide is formed on areas not covered by the self-assembling monolayer. The gate cap dielectric functions as an etch-stop structure during formation of a via hole, so that electrical shorting between a contact via structure formed therein and the gate electrode is avoided.

The invention discloses a centrifugal manufacturing method for a dielectric functional gradient insulator. The centrifugal manufacturing method applies a centrifugal force to enable the concentration of a high dielectric filler to realize continuous gradient distribution so as to obtain the insulator, the dielectric parameters of which are in continuous gradient variation. The preparation method comprises the following steps: (1) preparing a resin mixture according to a certain proportion; (2) carrying out vacuum mixing and degassing; (3) placing the mixture into a tailored mold, and mounting the mold on a centrifugal machine; (4) starting up the centrifugal machine to centrifuge the mixture; (5) stopping the centrifugal machine, taking down the mold, solidifying the insulator under the high temperature environment and demolding. The insulator manufacturing method disclosed by the invention can enable the dielectric parameters to achieve continuous gradient variation inside the insulator, so as to effectively improve the whole electric strength of the insulator.

The invention discloses a cable operation state diagnosis system. The system realizes cable operation state diagnosis by measuring and analyzing cable broadband impedance spectrum data, and specifically includes three major functions: (1) cable overall operation state evaluation; (2) cable local Locating and diagnosing latent defects; (3) Rapidly locating permanent cable faults. The main components of the system are as follows: firstly, the cable initial characteristic parameter management module realizes the calculation of the initial characteristic parameters of the cable by inputting the cable geometric dimension data and the cable insulating material dielectric function data; then the cable broadband impedance spectrum measurement module automatically selects the appropriate frequency according to the cable length range, measure the broadband impedance spectrum of the head end of the cable under test; finally, the cable broadband impedance spectrum positioning analysis module analyzes and processes the initial characteristic parameters of the cable and the measured impedance spectrum data, so as to realize the evaluation of the overall aging state of the cable, the diagnosis of local latent defects of the cable and Cable permanent fault fast location function. The invention fills the gap of using the cable broadband impedance spectrum data to diagnose the running state of the cable at present, and has the characteristics of convenient use, high accuracy and no damage to the cable.

Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. The device may include an interface having a dielectric function that varies spatially according to a transformed pattern, wherein the transformed pattern conforms to a transformation of a precursor pattern according to a mathematical function. A method is also provided for generating a pattern for incorporation in a device. The method comprises providing a precursor pattern, and transforming the precursor pattern according to a mathematical function, thereby generating a transformed pattern. Alternatively, or additionally, the device may include an interface having a dielectric function that varies spatially according to a transformed pattern, wherein the transformed pattern conforms to a transformation of a periodic precursor pattern according to a mathematical function. The mathematical function includes providing an angular displacement to features of the periodic precursor pattern, wherein the angular displacement depends on the radial distance of the features of the periodic precursor pattern with respect to a reference origin.

Simultaneous use of wavelengths in at least two ranges selected from RADIO, MICRO, FIR, IR, NIR-VIS-NUV, UV, DUV, VUV EUV, XRAY in a regression procedure to evaluate parameters in mathematical dispersion structures to model dielectric functions.

Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.

A perpendicular STT-MRAM comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a recording layer which has an interface interaction with an underneath dielectric functional layer. The energy switch barrier of the recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the perpendicular magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

Methods, systems, and articles of manufacture consistent with the present invention determine the type of damage to a wire, the amount of damage, and the location of the damage based on the wire's broadband impedance measured from a single measurement point. The type of damage is determined by comparing the wire's calculated dielectric function, resistance and inductance to known values that correspond to types of wire damage. The amount of damage is determined by comparing the wire's low-frequency impedance phase to known low-frequency impedance phase information that corresponds to a known amount of wire damage. The location of damage is determined by comparing the wire's high-frequency impedance phase to known high-frequency impedance phase information that corresponds to a known location of wire damage.

According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means (330) allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation (2) of pre-determined frequency lying in said frequency band of use and means of control (22) apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation (2) by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal (10).

The present invention relates to an apparatus for determining a dielectric function in an object. The apparatus comprises one transmit antenna for transmitting microwave radiation through said object, and one receive antenna for receiving the transmitted microwave radiation, one ultrasound transmitter for emitting ultrasound radiation through said object to generate a density variation in the object, means to analyse the microwave radiation transmitted through the density variation to determine the acousto-electric interaction δ in the object, and means to calculate the dielectric function in the object from the acousto-electric interaction. The invention also relates to a method for determining the dielectric function in an object.

A STT-MRAM comprises apparatus, and method of operating a double-MTJ magnetoresistive memory and a plurality of magnetoresistive memory element having a first recording layer which has an interface interaction with an underneath dielectric functional layer and having a second recording layer which has no interface interaction with an underneath dielectric functional layer. The energy switch barrier of the first recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the magnetization of the first recording layer is readily reversible in a low spin-transfer switching current while the magnetization of the second recording layer is readily reversible in a high spin-transfer switching current, enabling two separate bits recording in a double MTJ stack.

Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.

A planar STT-MRAM comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

The invention discloses an organic photoelectric material molecular orientation characterization method. The method includes: establishing a film transmission matrix of a to-be-tested sample accordingto a characteristic matrix of each film in an optical model by establishing the optical model of the to-be-tested sample; constructing and parameterizing a dielectric function model of a to-be-testedsample material to obtain optical constants of the to-be-tested sample, calculating according to the optical constants and the film transmission matrix to obtain a theoretical Mueller matrix spectrumof the to-be-tested sample, adopting an iterative algorithm for fitting the theoretical Mueller matrix spectrum with a measured Mueller matrix spectrum to extract an extinction coefficient of the sample, and calculating to obtain molecular orientation of the to-be-tested sample according to a constructed model of relation between molecular orientation of the to-be-tested sample and the extinctioncoefficient. By creation of a universal analysis method, the 4*4 Mueller matrix obtained by measurement with a Mueller matrix ellipsometer is calculated and analyzed to obtain molecular orientation of a photoelectric material, and the method is suitable for quick and accurate calibration of organic molecular orientation in organic photoelectric devices.

The invention is applicable to the technical field of security check and provides a terahertz imaging system and a terahertz security device. The terahertz imaging system comprises a terahertz radiation module, an optical chopper, an imaging objective lens, a light-sensitive surface, a terahertz detection module and a signal processing module; the optical chopper is used for modulating terahertz wave radiated by the terahertz radiation module into terahertz wave with default frequency and radiating the terahertz wave to a to-be-detected object in a covering manner; the imaging objective lens is used for focusing the terahertz wave carried with complex dielectric function information of the to-be-detected object on a focal plane of an image space; the minimal edge length of the light-sensitive surface is greater than or equal to the maximum edge length of an imaging region of the imaging objective lens, and the terahertz detection module is used for converting the terahertz wave carried with the complex dielectric function information into an analog current signal; the signal processing module is connected with the terahertz detection module. By the arrangement, nondestructive detection can be performed on human body or biological tissue, radiation injury can be reduced, complete detection data of the to-be-detected object can be acquired by one radiation, detection efficiency is improved, and high-risk items of metal, poison, explosive and the like can be effectively identified.

The invention discloses a multi-level optimization design method of a GIS / GIL basin-type insulator with high electrical resistance. The method comprises a preliminary design stage and a detailed design stage. In the preliminary design stage, the basic shape of the GIS / GIL basin-type insulator is constructed by adopting contour shape optimization, the shapes of a convex surface and a concave surface of a basin body are described by utilizing a two-dimensional contour function, dielectric functionally graded material distribution is considered to be introduced, dielectric property space distribution is adjusted by utilizing topological optimization to actively regulate and control electric field distribution, and a creeping electric field is further deeply homogenized; in the detailed designstage, according to a dielectric distribution topological optimization result, the optimized gradient insulation area is converted into a high dielectric area with a constant dielectric constant, thesizes of the high-voltage side metal accessory and the high dielectric area are finely adjusted, an optimal size parameter is found out by adopting a genetic algorithm or an ant colony algorithm so as to finish the design of the basin-type insulator for GIS / GIL. The design space can be fully expanded, depth suppression of a creeping electric field is achieved, and the purpose of increasing the breakdown voltage of the basin-type insulator is achieved.

The present invention relates to an apparatus for determining a dielectric function in an object. The apparatus comprises one transmit antenna ( 42 ) for transmitting microwave radiation through said object, and one receive antenna ( 43 ) for receiving the transmitted microwave radiation, one ultrasound transmitter for emitting ultrasound radiation through said object to generate a density variation in the object, means to analyse the microwave radiation transmitted through the density variation to determine the acousto-electric interaction delta in the object, and means to calculate the dielectric function in the object from the acousto-electric interaction. The invention also relates to a method for determining the dielectric function in an object.

Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface including a first region and a second region. The first region having a dielectric function that varies spatially according to a first pattern, and the second region having a dielectric function that varies spatially according to a second pattern, wherein the second pattern is a rotation of the first pattern. A method of forming a light-emitting device is provided. The method comprises forming an interface comprising a first region and a second region. The first region having a dielectric function that varies spatially according to a first pattern, and the second region having a dielectric function that varies spatially according to a second pattern, wherein the second pattern is a rotation of the first pattern.

The invention relates to a hydrated alumina dielectric thin film with a solid electrolyte function and the preparation of the hydrated alumina dielectric thin film. The hydrated alumina dielectric thin film is prepared from alumina and combined water, wherein the alumina has a dielectric function; the combined water is combined with the alumina and enables the alumina to have the solid electrolyte function. The hydrated alumina dielectric thin film is prepared from the following steps of (1) adding acetylacetone in an aluminum alkoxide solution, adding glacial acetic acid in a mixture after stirring and mixing the mixture, continuously stirring and mixing the mixture, and obtaining a sol precursor after carrying out cooling filtration; (2) attaching the sol precursor to a basal body, obtaining an amorphous alumina thin film through gel solidification after carrying out drying treatment, and obtaining a target product by carrying out hydration thermal treatment on the amorphous alumina thin film. Compared with the prior art, the hydrated alumina dielectric thin film disclosed by the invention has an excellent dielectric function and the solid electrolyte function, and a self-repairing function can be provided for a capacitor; meanwhile, the hydrated alumina dielectric thin film has the advantages that the occupied space is small, the energy storage density of the capacitor can be greatly increased, and the like.

Methodology for segmentally modeling Real and Imaginary Parts of Optical Constants or Dielectric Functions using Kroneig-Kramer (K-K) Consistant Oscillators with substantially definite start and end points.

Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device designed to emit light may include an interface through which emitted light passes therethrough, wherein the interface has a dielectric function that varies spatially according to a pattern. The pattern may be arranged to provide anisotropic light emission characterized by an emission pattern on a far-field projection plane substantially parallel to the interface, wherein a first total light intensity along a first axis on the projection plane is at least 20% greater than a second total light intensity along a second axis on the projection plane. Alternatively, or additionally, the pattern may be arranged to provide anisotropic light emission characterized by a first total light emission on a first plane that is at least 20% greater than a second total light emission on a second plane, wherein the first and second planes are perpendicular to the interface, and wherein the first and second planes are also perpendicular to each other.

The invention relates to a method for quantitatively analyzing blade component distribution on the basis of a terahertz imaging technology and belongs to the techncial field of terahertz spectroscopydetection. The method firstly establishes an equivalent dielectric function of a blade according to an effective medium model and on the basis of the characteristic that percentage composition of water, solid matters and gases in the blade as well as terahertz frequency spectrums of the water, solid maters and gases can influence a terahertz frequency spectrum of the whole blade, then the percentage composition of the water, solid matters and gases in the blade is adjusted by utilizing a random optimization algorithm to enable a difference between an equivalent dielectric spectrum of the bladeand the real dielectric spectrum to be the smallest, so that the percentage composition of the water, solid matters and gases is obtained, and the real contents of the three matters in the blade arereflected. When detection is performed by utilizing the method provided by the invention, exact values of the contents of the three components, namely the water, solid matters and gases, in the bladecan be obtained at the same time during the detection, and a visual distribution image of the three components can be provided. Compard with the traditional detection method, the method provided by the invention has the advantages of being lossless and quick and is applicable to being popularized.

The invention discloses a manufacturing device and method for a dual-component mixed epoxy casting dielectric functional gradient insulator. The manufacturing device comprises a dual-material feedingsystem, wherein an extrusion head of the feeding system is arranged on a three-dimensional motion system; the diameter of a spray hole of the extrusion head is adjustable, and one end of the extrusionhead is positioned inside an epoxy casting metal mould; the three-dimensional motion system is connected to a control system; the control system and the feeding system are separately connected to a computer through cables for raw material supply, mixing and extruding as well as control, on X-direction, Y-direction and Z-direction positions, of the extrusion head, so that manufacturing of a dielectric-constant functional gradient insulator is accomplished. Two epoxy resin composite materials of different dielectric properties are mixed on line, so that materials are accurately transferred to specific positions in the mould through a three-dimensional motion platform, and a large-dimension insulator with continuous dielectric characteristic gradient distribution can be manufactured withoutchanging other characteristics of an insulating structure, and therefore, along-surface electrical resistance is improved.

Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission that has a substantially isotropic emission pattern and is more collimated than a Lambertian distribution of light.

Determination of thin metal film dielectric function and layer thicknesses using simultaneous transmission spectroscopic ellipsometric (SE) and transmission intensity (T) measurements obtained in-situ to break correlation between thickness and optical constants of very thin absorbing films, preferably using only A.C. Components of ellipsometric and intensity characterizing electromagnetic radiation which transmits through said substrate and enters a detector.

The invention relates to a microwave dielectric function ceramic material which is yttrium niobate and discloses a solid state reaction synthesis sintering method of the yttrium niobate which is a synthesis method with the advantages of abundant raw materials and simple and economical process. The method is: Y2O3 powder and Nb2O5 powder are weighed according to the molar ratio of 1 to 1, the purity of Nb2O5 is 99.9 percent, d50 is equal to 8.3 micrometers, the purity of the Y2O3 is 99.8 percent, and d50 is equal to 7.9 micrometers; milling balls are weighted according to the ball-material ratio of 2 to 1, and dehydrated alcohol is weighted according to the liquid-material ratio of 0.7 to 1 and is put in a ball milling tank to be milled. The mixed slurry is separated from the milling balls, dried, sieved, pressed to be molded, sintered at the temperature of 1100-1350 DEG C, cooled and sintered into the YNbO4 ceramic through the solid phase reaction. The room temperature dielectric constant of the YNbO4 is 7- 26 and the quality factor is 0.7*10<3>-27*10<4>.

Methods, systems, and articles of manufacture consistent with the present invention determine the type of damage to a wire, the amount of damage, and the location of the damage based on the wire's broadband impedance measured from a single measurement point. The type of damage is determined by comparing the wire's calculated dielectric function, resistance and inductance to known values that correspond to types of wire damage. The amount of damage is determined by comparing the wire's low-frequency impedance phase to known low-frequency impedance phase information that corresponds to a known amount of wire damage. The location of damage is determined by comparing the wire's high-frequency impedance phase to known high-frequency impedance phase information that corresponds to a known location of wire damage.