Production method of high response ultraviolet detector
A technology of ultraviolet detector and manufacturing method, which is applied in the field of semiconductor device preparation, can solve problems such as device performance degradation, and achieve the effects of reducing and photoconductive gain, reducing dark current, and reducing material defect density
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[0027] 1. Production equipment and materials:
[0028] 1. Planetary disk type 4-inch 11-piece metal-organic chemical vapor deposition MOCVD preparation system.
[0029] 2. Trimethylgallium (TMGa) and trimethylaluminum (TMAl) are used as metal organic MO growth sources of gallium and aluminum in the MOCVD growth process, ammonia (NH 3 ) as a nitrogen source, MO source into the auxiliary gas path: the growth source and the auxiliary gas path are input into the MOCVD reaction chamber through independent pipes and systems.
[0030] 3. Plasma enhanced chemical vapor deposition (PECVD) is used to deposit silicon dioxide (or silicon nitride, etc.) materials.
[0031] 4. Electron beam evaporation is used for evaporating Ti, Al, Ni, Au and other metal thin films.
[0032] 2. Specific steps:
[0033] refer to Figure 1~3 , based on semipolar Al x Ga 1-x The specific process steps of the N material MSM ultraviolet detection device structure are as follows.
[0034] Step 1: First, ...
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