58 results about "Gunn diode" patented technology

A monopulse vehicular radar system for tracking a target about an automotive vehicle senses a transmitted signal reflected back from the target and received at two different locations, determines the sum and the difference of the reflected signals sensed at the two locations, and compares the sum and difference to determine the deviation of the target from a reference azimuth. A source frequency provided by a Gunn diode is applied to and transmitted by a two-lobe monopulse antenna. The antenna lobes detect the reflected signals from the target by sensing them at the two different lobes. A hybrid junction provides sum and difference signals to mixers which homodyne the signals to produce sum and difference Doppler frequency signals using the source frequency. The Doppler frequency signals are amplified and then compared to determine the deviation of the target from the reference azimuth. The comparison process can be done digitally by converting the amplified frequency signals to digital signals which are then processed in a digital signal processor, or the comparison may be done in analog fashion using a phase / quotient detector. The range or distance of the target is determined by shifting the source frequency between two frequencies during transmission and frequency shifting the sum and difference Doppler frequency signals in similar fashion following reception by the antenna.

The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

The invention relates to the technical field of diodes in microwave devices, in particular to a gunn diode and a manufacture method thereof. An epitaxial wafer of the gunn diode sequentially comprises a semiconductor insulating GaAs substrate, a heavily doped lower bottom surface n+GaAs layer, an active area n-GaAs layer, an nsGaAs layer, a GaAs intrinsic lower isolation layer, an Alx Ga1-xAs intrinsic barrier layer, a GaAs intrinsic upper isolation layer and a heavily doped upper surface n+GaAs layer from bottom to top. According to the gunn diode provided by the invention, dead areas in the active area n-GaAs layer can be effectively reduced, the conversion efficiency from direct current signals to radio frequency signals is increased, the thermal stability is improved; and output oscillation frequency and power are tuned by utilizing direct current voltage. The manufacture method of the gunn diode provided by the invention is simple, convenient and easy to realize single chip integration.

The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

The invention relates to a high-power and low-noise planar Gunn diode and a preparation method thereof. The high-power and low-noise planar Gunn diode comprises an insulation substrate, a channel layer, and a coplanar waveguide arranged above the channel layer, the length of a resonant cavity of the coplanar waveguide is integer multiples of one half of the resonance wavelength, and the characteristic impedance of the coplanar waveguide and the impedance (usually 50 ohm) of a load are the same with the resonant frequency. The planar Gunn diode is arranged in the resonant cavity of the coplanar waveguide so that the planar Gunn device can operate in a resonance mode, the emission power, the conversion efficiency and the frequency stability of the planar Gunn device are greatly improved, and the phase noise is reduced.

The invention discloses a linear gradient doped GaAs planar gunn diode which comprises a semiconductor insulating substrate, a highly doped lower bottom surface N<+> layer, a linear gradient doped N<-> type layer, a heavily doped upper surface N<+> layer, a table-board structure, an upper electrode and a lower electrode, wherein the semiconductor insulating substrate is used for supporting the whole GaAs planar gunn diode; the highly doped lower bottom surface N<+> layer epitaxially grows on the semiconductor insulating substrate; the linear gradient doped N<-> type layer epitaxially grows on the lower bottom surface N<+> layer; the upper surface N<+> layer epitaxially grows on the linear gradient doped N<-> type layer; the table-board structure is formed on the upper surface N<+> layer and the lower bottom surface N<+> layer through an island digging and insulating; the upper electrode in an ohmic contact is formed on the upper surface N<+> layer by metal evaporation; and the lower electrode in an ohmic contact is formed on the lower bottom surface N<+> layer by metal evaporation. The invention also discloses a method for manufacturing the linear gradient doped GaAs planar gunn diode. By utilizing the linear gradient doped GaAs planar gunn diode, the working frequency of oscillating circuits within the ranges of millimeter waves and submillimeter waves is increased, and the conversion efficiency from direct current to ratio frequency is enhanced.

A high-frequency oscillator that can tune oscillation characteristics is provided. A high-frequency oscillator includes a Gunn diode serving as a high-frequency oscillation element that generates high-frequency signals, a resonator connected to the Gunn diode, a varactor diode serving as a variable-capacitance element that is disposed on the resonator and changes a resonance frequency, and a bias supply circuit that is connected to the varactor diode and supplies a bias voltage applied in order to change a capacitance. The bias supply circuit includes a trimmable chip resistor serving as a pre-set variable resistor that regulates a bias voltage applied to the varactor diode. By regulating the resistance value of the trimmable chip resistor, it is possible to control the capacitance value of the varactor diode and tune oscillation characteristics to a desired state.

The invention solves a problem of a non-invasive effect on a biological object for suppressing in it and in its biological substances of pathological factors (pathogenic microorganisms and processes) and / or for stimulating of the biological activity of biological objects and biological substances which constitute the biological object.The device includes a power source connected to a semiconductor device, the active layer of which contains a semiconductor structure based on A3B5 compound. The A3B5 semiconductor device is made with a volt-ampere characteristic having a section with a negative differential conductance, the value of which exceeds the differential conductance of the biological object. The semiconductor device may be made as the Gunn diode, as the tunnel diode, as the BARRIT diode and as the transistor. The semiconductor structure may be made, at least, with two working volumes of the same or diverse A3B5 compounds with different geometrical dimensions.

A device for generating electromagnetic oscillations in the HF range, in particular in the gigahertz range, using at least one Gunn element, in particular at least one Gunn diode. The device is designed to be attached to at least one printed-board-like electric or electronic circuit configuration, in particular an electric or electronic HF circuit configuration, having a generally planar expansion.

The invention relates to the technical field of diodes in microwave devices, in particular to a gunn diode and a manufacture method thereof. An epitaxial wafer of the gunn diode sequentially comprises a semiconductor insulating GaAs substrate, a heavily doped lower bottom surface n+GaAs layer, an active area n-GaAs layer, an nsGaAs layer, a GaAs intrinsic lower isolation layer, an Alx Ga1-xAs intrinsic barrier layer, a GaAs intrinsic upper isolation layer and a heavily doped upper surface n+GaAs layer from bottom to top. According to the gunn diode provided by the invention, dead areas in the active area n-GaAs layer can be effectively reduced, the conversion efficiency from direct current signals to radio frequency signals is increased, the thermal stability is improved; and output oscillation frequency and power are tuned by utilizing direct current voltage. The manufacture method of the gunn diode provided by the invention is simple, convenient and easy to realize single chip integration.