GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode

A Gunn diode and cathode technology, which is applied in the field of microelectronic devices, can solve the problems of affecting the electrical characteristics of the device, high dislocation concentration of bulk materials, etc., and achieve the effect of improving the working frequency and conversion efficiency

Active Publication Date: 2015-06-03
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the above-mentioned electrical characteristics of the Gunn device with notch-doped structure have been well verified in device simulation, in the actual manufacturing process, due to the lack of an effective dislocation filtering mechanism, a large number of dislocations extend to the electronic The transition layer, resulting in a high concentration of dislocations in the bulk material of this layer, which affects the electrical characteristics of the device

Method used

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  • GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode
  • GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode
  • GaN Gunn diode based on notch structure and manufacturing method for GaN Gunn diode

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Effect test

Embodiment 1

[0045] Embodiment 1: Fabricate a GaN Gunn diode on a 4H-SiC conductive substrate.

[0046] Step 1, thinning the substrate.

[0047] A 4H-SiC conductive substrate with a diameter of 2 inches is selected, and the back surface is thinned until the thickness of the substrate is 150um.

[0048] Step 2, epitaxially growing an AlN nucleation layer.

[0049] Using MOCVD, under the conditions of maintaining a pressure of 40Torr and a temperature of 650°C, trimethylaluminum and nitrogen are fed simultaneously to grow an AlN nucleation layer with a thickness of 10nm on a 4H-SiC conductive substrate.

[0050] Step 3, epitaxial growth under n + GaN cathode ohmic contact layer.

[0051] Using MOCVD, the temperature is raised to 1060°C, and under the condition of maintaining a pressure of 40Torr, trimethylgallium, nitrogen and n-type dopant source - silane are introduced at the same time, the epitaxial growth thickness is 240nm, and the doping concentration is 1.5×10 18 cm -3 next n +...

Embodiment 2

[0082] Embodiment 2: Fabricate a GaN Gunn diode on a 4H-SiC semi-insulating substrate.

[0083] Step 1, select a 4H-SiC semi-insulating substrate with a diameter of 2 inches, and thin the back surface until the thickness of the substrate is 150um.

[0084] Step 2, put the 4H-SiC semi-insulating substrate into the MOCVD reaction chamber, set the growth temperature to 600°C, feed trimethylaluminum and nitrogen into the reaction chamber at the same time, and grow under the condition of maintaining the pressure at 40 Torr AlN nucleation layer with a thickness of 8 nm.

[0085] Step 3: Raise the substrate on which the AlN nucleation layer has been grown to 1000°C, simultaneously inject trimethylgallium, nitrogen and n-type dopant source-silane into the reaction chamber, and keep the pressure at 40Torr , with a growth thickness of 200nm and a doping concentration of 1.0×10 18 cm -3 next n + GaN cathode ohmic contact layer.

[0086] Step 4, the pressure in the MOCVD reaction cha...

Embodiment 3

[0099] Embodiment 3: Fabricate a GaN Gunn diode on a 6H-SiC conductive substrate.

[0100] Step A, thinning the substrate.

[0101] A 6H-SiC conductive substrate with a diameter of 2 inches is selected, and the back surface is thinned until the thickness of the substrate is 150um.

[0102] Step B, making AlN nucleation layer and lower n + GaN cathode ohmic contact layer.

[0103] In the MOCVD reaction chamber, under the conditions of keeping the pressure at 60 Torr and the temperature at 650°C, feed trimethylaluminum and nitrogen at the same time, and grow an AlN nucleation layer with a thickness of 10nm on the 6H-SiC conductive substrate; continue Using MOCVD process, raise the temperature to 1100℃, keep the pressure at 60Torr, and then pass trimethylgallium, nitrogen and n-type doping source-silane at the same time, the epitaxial growth thickness is 300nm, and the doping concentration is 2×10 18 cm -3 next n + GaN cathode ohmic contact layer.

[0104] Step C, epitaxial...

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Abstract

The invention discloses a GaN Gunn diode based on a notch structure and a manufacturing method for the GaN Gunn diode, and mainly solves problems of high dislocation concentration and poor heat dissipation property of a transition layer in an existing Gunn device. The diode adopts a multilayer structure comprising a SiC substrate, an AlN nucleating layer, a lower n<+>GaN cathode ohmic contact layer, an AlGaN electron emission layer, an upper n<+>GaN cathode ohmic contact layer, a GaN notch layer, an n<->GaN transition layer and an n<+>GaN anode ohmic contact layer from bottom to top; the percentage of an Al component is increased to 20% from 0% in a linear gradient manner from bottom to top; an annular electrode and a substrate electrode are arranged above the lower n<+>GaN cathode ohmic contact layer and below the SiC substrate; a round electrode is arranged above the n<+>GaN anode ohmic contact layer; a passivation layer is arranged above the annular electrode and the round electrode. The diode can remarkably reduce the dislocation concentration and the length of a dead region, and is suitable for working within a terahertz frequency range.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a Gunn diode made of GaN semiconductor material with a wide bandgap, which can be used for making high-frequency and high-power devices. technical background [0002] As a new type of wide-bandgap semiconductor, GaN material has the characteristics of large bandgap width, stable chemical properties, high critical breakdown electric field, high electron saturation velocity, and high concentration of heterojunction two-dimensional electron gas. It is widely used in millimeter wave high-power electronic devices. field has received extensive attention. Compared with the traditional III-V compound semiconductor GaAs, the negative resistance oscillation fundamental frequency of GaN reaches 750GHz, far exceeding GaAs's 140GHz. In addition, the output power of GaN-based electronic devices is also higher than that of GaAs-based electronic devices. 1 to 2 order...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L47/02H01L47/00
Inventor 杨林安许详张进成郝跃
Owner XIDIAN UNIV
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