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138results about How to "Small difference in performance" patented technology

Inorganic phase-change material and preparation method thereof

InactiveCN102660231ALatent heat of fusion without decaySimple methodHeat-exchange elementsDisodium phosphateHydrogen phosphate
The invention discloses an inorganic phase-change material and a preparation method thereof. The inorganic phase-change material comprises at least one of a thickening agent and a water-retaining agent, and main thermit, nucleating agent, pH regulator, heat conducting agent, and water, wherein the main thermit is eutectic salt of sodium sulfate decahydrate and sodium hydrogen phosphate docecahydrate. The preparation method comprises the following steps: adding the main thermit in water, stirring in 40-45 DEG C water bath until completely fusing, adding the nucleating agent, the pH regulator, and the heat conducting agent and fully stirring to completely dissolve the nucleating agent and the pH regulator and uniformly disperse the heat conducting agent, then adding at least one of the thickening agent and the water-retaining agent and stirring to uniformly disperse the thickening agent or completely expanse the water-retaining agent, so as to obtain the inorganic phase-change material. The inorganic phase-change material of the invention has the characteristics of noninflammability and no toxicity, the phase change temperature is 21-27 DEG C, the latent heat of phase change is 214 kJ/kg, and the inorganic phase-change material has no attenuation of performance after 1000 weeks of the solidification-fusing cycle.
Owner:WUHAN UNIV

Array substrate, display panel and display device

The invention discloses an array substrate, a display panel and a display device and belongs to the display technology field. A display area and a non-display area are included. The display area comprises a plurality of gate lines which are extended along a first direction and a plurality of data lines which are extended along a second direction. The array substrate comprises at least one segmentof special-shaped edge. The non-display area comprises a plurality of shifting registers. The shifting registers comprise a plurality of transistors. The plurality of transistors comprise sensitive transistors and non-sensitive transistors. The plurality of shifting registers comprise at least one first shifting register. The first shifting register is adjacent to the special-shaped edge. In the first shifting register, the channel direction of at least one sensitive transistor is parallel to the first direction or the second direction, and the channel direction of at least one non-sensitive transistor is intersected with the first direction and the second direction. Compared with the prior art, the uniformity of the thickness of the array substrate corresponding to a part of the non-display area where the first shifting register is located can be improved, and display quality is increased.
Owner:SHANGHAI AVIC OPTOELECTRONICS

Array substrate, manufacturing method of array substrate and display device

ActiveCN104465673ASmall difference in performanceThe difference in the effect of reducing electron mobilityTransistorSolid-state devicesPower flowDisplay device
The invention discloses an array substrate, a manufacturing method of the array substrate and a display device. The array substrate comprises a substrate body, a poly-Si thin film and multiple thin film transistors. The poly-Si thin film comprises multiple crystal boundaries extending in the same direction. The multiple thin film transistors comprise at least one thin film transistor with the channel current direction as the first direction and at least one thin film transistor with the channel current direction as the second direction. The first direction and the second direction are different. Each thin film transistor comprises a grid electrode, an active layer, a source electrode and a drain electrode, wherein the active layer is composed of the poly-Si thin film. The included angle between the first direction and the crystal boundary extending direction and the included angle between the second direction and the crystal boundary extending direction are not equal to 90 degrees. By reducing difference of influence of the crystal boundaries on the electronic mobility of the thin film transistors with the channel current in the first direction and the thin film transistors with the channel current in the second direction, performance difference of the two kinds of thin film transistors is reduced.
Owner:BOE TECH GRP CO LTD +1

Multi-path cross-protocol transmission data packet scheduling method and system

The invention provides a multi-path cross-protocol transmission data packet scheduling method and system, and belongs to the technical field of communication. A first transmission unit is used as an intermediate device of a sending end. Asecond transmission unit is used as an intermediate device of a receiving end, and the first transmission unit and the second transmission unit are both configured with physical interfaces and transmission protocols for forwarding packets; after the transmission unit senses reachable information of the opposite end, a plurality of end-to-end links bound with the physical interface attributes are established; and the second transmission unit is configured with a virtual network loop or a physical port corresponding to the link, senses the time delay, the throughput and the congestion state of the link in real time, and adjusts the sending rate of the link, so that the customizable time delay of packet forwarding and the alignment of the sending rate arerealized. According to the invention, the performance difference between concurrent links is reduced, the disorder of data packets is reduced, the congestion of a cache region of a receiving end canbe prevented, and the overall throughput of a multi-path cross-protocol transmission system and the disorder of control data are improved on the premise of ensuring the safety.
Owner:BEIJING JIAOTONG UNIV

Method for improving radial structure and performance uniformity of G115 steel large-caliber thick-wall pipe

ActiveCN108950148AImprove radial temperature fieldImprove uniformityFurnace typesHeat treatment furnacesQuenchingCaliber
The invention discloses a method for improving radial structure and performance uniformity of a G115 steel large-caliber thick-wall pipe, and belongs to the technical field of steel materials. The process comprises the following steps of a normalizing system and a tempering system, wherein the normalizing system is characterized in that a tube blank subjected to hot-extrusion is adopted, chargingis carried out by using the temperature of 400-600 DEG C, warming is carried out with the heating speed of 100-120 DEG C/h until the temperature reaches 980-1000 DEG C, the hardening time is 0.5-1 min/mm, then warming is carried out with the heating speed of 130-150 DEG C until the temperature reaches 1030-1080 DEG C, then hardening is carried out, the hardening time is 0.5-0.8 min/mm, heat preservation is carried out for 1-3 hours after hardening, and air cooling or water quenching is carried out to the room temperature; and the tempering system is characterized in that charging is carried out by using the temperature less than or equal to 600 DEG C, warming is carried out with the heating speed of 120-150 DEG C/h until the tempering temperature reaches 780 +/- 10 DEG C, the time of heatpreservation is 3-5 hours, and air cooling is carried out to the room temperature. The method has the advantages that the radial temperature field of the thick-wall pipe is improved, moreover, the grain of the thick-wall pipe is not prone to coarsening, so that the radial structure and performance uniformity of the thick-wall pipe is greatly improved.
Owner:CENT IRON & STEEL RES INST

High-strength nitrogen-containing economical austenite stainless steel and manufacturing method thereof

The invention relates to a high-strength nitrogen-containing economical austenite stainless steel and a manufacturing method thereof. The chemical components of the stainless steel, by weight, of 0.05-0.15% of C, 0.3-1% of Si, 8.5-11.0% of Mn, 14.0-16.0% of Cr, 1.0-2.5% of Ni, 0.10-0.25% of N, less than 0.08% of P, less than 0.01% of S, 0.5-2.0% of Cu, 0.1-0.5% of Mo, and the balance Fe and inevitable impurities, wherein Md <30/50> is greater than or equal to 20 DEG C. In the manufacturing process of the high-strength nitrogen-containing economical austenite stainless steel, through cold rolling twice and flexible annealing, crystal grains are refined through production and inversion of deformation martensites, and finally, the crystal grains of which the dimension is smaller than 500nm are obtained, so that the intensity of materials is greatly improved; and the obtained high-strength nitrogen-containing economical austenite stainless steel has the following specific properties that the yield strength is greater than or equal to 650MPa, the tensile strength is greater than or equal to 1000MPa, and the elongation rate is greater than or equal to 35%, and the high-strength nitrogen-containing economical austenite stainless steel is suitable for preparation of high-strength fine-specification precision strip steels.
Owner:BAOSTEEL DESHENG STAINLESS STEEL

Image sensor and manufacturing method of transistor

The invention discloses an image sensor and a manufacturing method of a transistor. The image sensor comprises a pixel array. One or a plurality of pixel units of the pixel array respectively comprise one source following transistor. Each source following transistor is a junction type field effect transistor and comprises a first conduction type substrate, a second conduction type well, a second conduction type deposition doped layer, a first conduction type source region, a first conduction type drain region and a first conduction type doped layer, wherein the second conduction type well is positioned in the first conduction type substrate; the second conduction type deposition doped layer is positioned outside the surface of the first conduction type substrate and at least part of the second conduction type deposition doped layer is positioned on the second conduction type well; the first conduction type source region is positioned in the second conduction type well; the first conduction type drain region is positioned in the first conduction type substrate and/or the second conduction type well; at least part of the first conduction type doped layer is positioned between the second conduction type well and the second conduction type deposition doped layer so as to ensure the first conduction type source region to be electrically connected with the first conduction type drain region; and PN nodes are respectively formed between the first conduction type doped layer and the second conduction type well and between the first conduction type doped layer and the second conduction type deposition doped layer.
Owner:GALAXYCORE SHANGHAI

Preparation method of wear-resistant hydraulic pump part

The invention belongs to the technical field of hydraulic pump manufacturing, and particularly relates to a preparation method of a wear-resistant hydraulic pump part. A carbide coating, a PVD methodand a carburizing technology are combined, a carburizing diffusion layer is prepared between the carbide coating and a part substrate through an ion sputtering method, namely, the surface of the partis subjected to a surface carburizing treatment by the ion sputtering method, and then a composite method of ion plating and magnetron sputtering is used for depositing a HfCrMoC carbide coating withcomponents in gradient change. The preparation method can slow the physical property difference between the carbide coating and the base material of the hydraulic pump part, improve the surface hardness and support effect of the base material, has high surface hardness and core toughness, and has a smooth surface and high wearing resistance; the adhesion between the coating and the substrate can be enhanced by 100% or more, the surface hardness of the invention is increased by two times or more, the surface treatment time is reduced by 80% or more, the service life of the hydraulic pump is doubled or more, and the maintenance and care cost of the hydraulic pump is reduced by 50% or more.
Owner:JINING ANTAI MINING EQUIP MFG CO LTD

Refractory brick raw material weighing and transporting system

ActiveCN105035781AFor precise controlAvoid pressing density inconsistenciesLoading/unloadingEngineeringMechanical engineering
The invention relates to a refractory brick raw material weighing and transporting system which comprises a feeding bin, a first feeding guide pipe, a first spiral rod, a weighing bin, a conveying bin, multiple fixed gates, a movable gate and a sliding rail. The feeding bin is arranged below an outlet of a raw material bin. The first feeding guide pipe penetrates the feeding bin, a first feeding port is formed in the middle of the first feeding guide pipe, a first discharging port is formed in one end of the first feeding guide pipe, and a second discharging port is formed in the other end of the first feeding guide pipe. The first spiral rod penetrates the first feeding guide pipe. The weighing bin comprises a first containing cavity, a second containing cavity, a first weighing component and a second weighing component. The conveying bin is arranged below the weighing bin. The fixed gates are arranged at the bottom of the conveying bin in parallel at intervals. The movable gate is tightly attached to the bottom of the fixed gates and the movable gate and the fixed gates form a sliding pair. The sliding rail is arranged above a press machine mold. By the adoption of the system, the weight of materials is accurately controlled, the refractory brick raw materials are weighed and transported electrically and automatically, and it is guaranteed that the materials evenly and smoothly fall into the press machine mold.
Owner:武汉吉森智能技术有限公司
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