Array substrate, manufacturing method of array substrate and display device

Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display device. The array substrate comprises a substrate body, a poly-Si thin film and multiple thin film transistors. The poly-Si thin film comprises multiple crystal boundaries extending in the same direction. The multiple thin film transistors comprise at least one thin film transistor with the channel current direction as the first direction and at least one thin film transistor with the channel current direction as the second direction. The first direction and the second direction are different. Each thin film transistor comprises a grid electrode, an active layer, a source electrode and a drain electrode, wherein the active layer is composed of the poly-Si thin film. The included angle between the first direction and the crystal boundary extending direction and the included angle between the second direction and the crystal boundary extending direction are not equal to 90 degrees. By reducing difference of influence of the crystal boundaries on the electronic mobility of the thin film transistors with the channel current in the first direction and the thin film transistors with the channel current in the second direction, performance difference of the two kinds of thin film transistors is reduced.

Description

technical field [0001] Embodiments of the present invention relate to a display device, in particular to an array substrate based on a low-temperature polysilicon thin film transistor, a manufacturing method thereof, and a display device including the array substrate. Background technique [0002] Currently, thin film transistors (TFTs) widely used in liquid crystal display devices and AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light emitting diode) display devices mainly include amorphous silicon thin film transistors and polycrystalline silicon thin film transistors. Among them, low temperature polysilicon (Low Temperature Poly-Silicon; LTPS) technology has also been applied to the manufacturing process of thin-film transistor displays, which mainly transforms amorphous silicon (a-Si) thin films by excimer laser annealing process (Excimer Laser Anneal) It is a polysilicon (Poly-Si) film. Electron mobility is increased by more than 100 times ...

AI Technical Summary

Problems solved by technology

In the case of forming grain boundaries, if there is an angle between the channel current direction of the thin film transistor formed on the polysilicon thin film layer and the extension direction of the grain boundary, the electron mobility of the thin film transistor will decrease, thereby affecting the performance of the thin film transistor

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