Reinforced linear gradient doped GaAs planar Gunn diode and manufacturing method thereof

Abstract

The invention discloses a reinforced linear gradient doped GaAs planar Gunn diode, which comprises a semiconductor insulated substrate, a high doped bottom N+ layer, a linear gradient doped N layer, an N- layer, a high doped upper surface N+ layer, a table top structure, an upper electrode and a lower electrode, wherein the semiconductor insulated substrate is used for supporting the whole GaAs planar Gunn diode; the high doped bottom N+ layer is epitaxially grown on the semiconductor insulated substrate; the linear gradient doped N layer is continuously epitaxially grown on the bottom N+ layer; the N- layer is epitaxially grown on the linear gradient doped N layer; the high doped upper surface N+ layer is epitaxially grown on the N- layer; the table top structure is formed on the bottom N+ layer and the upper surface N+ layer by two processes of digging and isolating; the upper electrode of ohmic contact is formed by evaporating metal on the upper surface N+ layer; and the lower electrode of ohmic contact is formed by evaporating metal on the bottom N+ layer. The invention discloses a manufacturing method for the reinforced linear gradient doped GaAs planar Gunn diode at the same time. By using the diode, the working frequency of an oscillating circuit in a millimeter wave or sub millimeter wave range is improved, and the conversion efficiency of direct current-to-radio frequency signals is enhanced.

Description

technical field [0001] The invention relates to the technical field of diodes in microwave devices, in particular to an enhanced linear gradient doped GaAs planar Gunn diode and a manufacturing method thereof. Background technique [0002] Oscillators based on nonlinear devices such as Gunn diodes are often used as high-frequency local oscillator sources. Gunn diodes are active nonlinear devices of millimeter-wave oscillators. Due to the continuous development of high-quality semiconductor material manufacturing, processing technology and assembly technologies, the devices show excellent performance. At the same time, the preparation process of Gunn diodes is simple and the structure is flexible, so they are not only used as local oscillator sources for various receiver mixers, but also can be used as small and medium power signal sources in radar, communication, space technology, etc., and are currently the most widely used. semiconductor oscillator. [0003] Traditional ...

AI Technical Summary

Problems solved by technology

The double-terminal Gunn diode with this doping structure, in the millimeter wave and submillimeter wave frequency range, the effective length of the N-type active region is reduced, and the RF output power and conversion efficiency are weakened; the Gunn diode with this doping structure cannot Use DC voltage to directly tune the output oscillation frequency; double-ended Gunn diodes are not conducive to monolithic integration, resulting in the need for a large number of device carriers, external bias circuits, and metal waveguides in the system.

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