GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method

A technology of electron emission layer and Gunn diode, which is applied in the direction of circuits, electrical components, bulk negative resistance effect devices, etc., can solve the problems that are not considered, affect the electrical characteristics of terahertz devices, and cannot significantly reduce the dislocation concentration. Effect of small lattice mismatch and reduction of dislocation concentration

Active Publication Date: 2014-09-03
晋江三伍微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a single layer of AlN or AlGaN is used as the electron emission layer. Although this structure can play the role of bending and annihilation of dislocations, it can only be filtered once and cannot significantly reduce the dislocation concentration.
AlGaN / GaN double-layer structure has also been proposed, but this structure does not consider the use of graded Al composition for AlGaN. Due to the large lattice mismatch between GaN and AlGaN, once the stress is released, the electron emission layer will Introducing new dislocations that affect the electrical properties of terahertz devices

Method used

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  • GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method
  • GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method
  • GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1: Fabricate a GaN Gunn diode on a 4H-SiC semi-insulating substrate.

[0058] Step 1, select a 4H-SiC semi-insulating substrate with a diameter of 2 inches, and thin the back surface until the thickness of the substrate is 150 μm.

[0059] Step 2, put the 4H-SiC semi-insulating substrate into the MOCVD reaction chamber, set the growth temperature to 600°C, feed trimethylaluminum and nitrogen into the reaction chamber at the same time, and grow under the condition of maintaining the pressure at 40 Torr AlN nucleation layer with a thickness of 30 nm.

[0060] Step 3: Raise the substrate on which the AlN nucleation layer has been grown to 1000°C, simultaneously inject trimethylgallium, nitrogen and n-type dopant source-silane into the reaction chamber, and keep the pressure at 40Torr , with a growth thickness of 100 nm and a doping concentration of 1.0×10 18 cm -3 the n + GaN cathode ohmic contact layer.

[0061] Step 4, put the sample obtained in the above...

Embodiment 2

[0072] Embodiment 2: Fabricate a GaN Gunn diode on a 6H-SiC semi-insulating substrate.

[0073] Step 1, thinning the substrate:

[0074] A 6H-SiC semi-insulating substrate with a diameter of 2 inches is selected, and the back surface is thinned until the thickness of the substrate is 150 μm.

[0075] Step 2, epitaxially growing the AlN nucleation layer:

[0076] Using MOCVD, under the conditions of maintaining a pressure of 40Torr and a temperature of 650°C, trimethylaluminum and nitrogen are fed simultaneously to grow an AlN nucleation layer with a thickness of 40nm on a 6H-SiC semi-insulating substrate.

[0077] Step three, epitaxial growth n + GaN cathode ohmic contact layer:

[0078]Using MOCVD, raise the temperature to 1060°C, keep the pressure at 40Torr, and feed trimethylgallium, nitrogen and n-type dopant source—silane at the same time, the epitaxial growth thickness is 150nm, and the doping concentration is 1.5 ×10 18 cm -3 the n + GaN cathode ohmic contact lay...

Embodiment 3

[0107] Embodiment 3: Fabricate a GaN Gunn diode on a 6H-SiC conductive substrate.

[0108] Step A, thinning the substrate:

[0109] A 6H-SiC conductive substrate with a diameter of 2 inches is selected, and the back surface is thinned until the thickness of the substrate is 150 μm.

[0110] Step B, making AlN nucleation layer and n + GaN cathode ohmic contact layer:

[0111] In the MOCVD reaction chamber, under the conditions of keeping the pressure at 60 Torr and the temperature at 650°C, feed trimethylaluminum and nitrogen at the same time, and grow an AlN nucleation layer with a thickness of 90nm on the 6H-SiC conductive substrate; continue Using MOCVD process, raise the temperature to 1100℃, keep the pressure at 60Torr, and then feed trimethylgallium, nitrogen and n-type dopant source - silane at the same time, and epitaxially grow n + GaN cathode ohmic contact layer, the thickness of the ohmic contact layer is 400nm, and the doping concentration is 2×10 18 cm -3 .

...

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Abstract

The invention discloses a GaN Gunn diode based on an AlGaN / GaN superlattice electron emission layer and a manufacturing method of the GaN Gunn diode. The GaN Gunn diode and the manufacturing method mainly aim at solving the problems that an existing Gunn device is low in power and poor in heat dissipation performance. The diode comprises a main part and an auxiliary part. The main part comprises a SiC substrate, an AlN nucleating layer, an n+GaN cathode ohmic contact layer, the electron emission layer, an n-GaN active layer and an n+GaN anode ohmic contact layer from bottom to top. The auxiliary part comprises an annular electrode, a substrate electrode, a circular electrode, a passivation layer, an open hole and a through hole. An AlGaN / GaN superlattice is adopted for the electron emission layer and has four to six cycles, the thickness of a GaN layer and the thickness of an AlGaN layer in each cycle both range from 10 nm to 20 nm, and an Al component in the AlGaN layer is linearly and gradually changed to 15% from 0% from bottom to top. The length of a dead zone can be remarkably reduced, dislocation concentration is reduced, and the GaN Gunn diode is suitable for terahertz frequency band work.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a Gunn diode made of GaN semiconductor material with a wide bandgap, which can be used for making high-frequency and high-power devices. technical background [0002] Because GaN has the characteristics of large band gap, stable chemical properties, high breakdown field strength, and not easy to thermal intrinsic, GaN is regarded as a promising material for the manufacture of millimeter-wave high-power semiconductor devices, and it is also the current Research hotspots. Compared with the traditional III-V compound semiconductor GaAs, the negative resistance oscillation fundamental frequency of GaN reaches 750GHz, far exceeding GaAs's 140GHz. In addition, for GaN-based electronic devices, its output power is also higher than that of GaAs-based electronic devices. 1 to 2 orders of magnitude, can reach hundreds of milliwatts or even several watts. There...

Claims

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Application Information

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IPC IPC(8): H01L47/02H01L47/00
Inventor 杨林安许详李亮张进成郝跃
Owner 晋江三伍微电子有限公司
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