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Gunn diode and manufacture method thereof

A Gunn diode and electrode technology, which is applied in the field of Gunn diode and its preparation, can solve the problems of unfavorable monolithic integration, failure to output oscillation frequency tuning, etc., and achieve easy monolithic integration, reduced dead zone, and simple preparation method Effect

Active Publication Date: 2012-07-04
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of doped double-terminal Gunn diode cannot directly tune the output oscillation frequency by using DC voltage, which is not conducive to the realization of monolithic integration, resulting in the need for a large number of device carriers, external bias circuits and metal waveguides in the system.

Method used

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  • Gunn diode and manufacture method thereof
  • Gunn diode and manufacture method thereof
  • Gunn diode and manufacture method thereof

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Embodiment Construction

[0038] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0039] Such as figure 1 As shown, the embodiment of the present invention provides a Gunn diode, comprising: a semiconductor insulating GaAs substrate 1, a highly doped lower bottom surface n epitaxially grown on the semiconductor insulating GaAs substrate 1 + GaAs layer 2, located on the bottom surface under high doping n +Active region n epitaxially grown on GaAs layer 2 - GaAs layer 3, located in the active area n - Epitaxially grown n on the GaAs layer 3 s GaAs layer 4, located at n s GaAs intrinsic lower isolation layer 5 epitaxially grown on the GaAs layer 4, Al on the GaAs intrinsic lower isolation layer 5 epitaxially grown with a linear gradient of Al molar content x Ga 1-x As intrinsic barrier layer 6, located in Al x Ga 1-x The epitaxially grown GaAs intrinsic upper isolation layer 7 on the As intrinsic barr...

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Abstract

The invention relates to the technical field of diodes in microwave devices, in particular to a gunn diode and a manufacture method thereof. An epitaxial wafer of the gunn diode sequentially comprises a semiconductor insulating GaAs substrate, a heavily doped lower bottom surface n+GaAs layer, an active area n-GaAs layer, an nsGaAs layer, a GaAs intrinsic lower isolation layer, an Alx Ga1-xAs intrinsic barrier layer, a GaAs intrinsic upper isolation layer and a heavily doped upper surface n+GaAs layer from bottom to top. According to the gunn diode provided by the invention, dead areas in the active area n-GaAs layer can be effectively reduced, the conversion efficiency from direct current signals to radio frequency signals is increased, the thermal stability is improved; and output oscillation frequency and power are tuned by utilizing direct current voltage. The manufacture method of the gunn diode provided by the invention is simple, convenient and easy to realize single chip integration.

Description

technical field [0001] The invention relates to the technical field of diodes in microwave devices, in particular to a Gunn diode and a preparation method thereof. Background technique [0002] Oscillators based on nonlinear devices such as Gunn diodes are often used as high-frequency local oscillator sources. Gunn diodes are active nonlinear devices of millimeter-wave oscillators. Due to the continuous development of high-quality semiconductor material manufacturing, processing technology and assembly technologies, the devices show excellent performance. At the same time, the preparation process of Gunn diodes is simple and the structure is flexible, so they are not only used as local oscillator sources for various receiver mixers, but also can be used as small and medium power signal sources in radar, communication, space technology, etc., and are currently the most widely used. semiconductor oscillator. [0003] Traditional Gunn diodes use uniform doping on the N-type l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 黄杰杨浩张海英田超董军荣
Owner SOI MICRO CO LTD
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