High-power and low-noise planar Gunn diode and preparation method thereof

A Gunn diode, low-noise technology, applied in the field of diodes in microwave devices, can solve the problems of losing the advantages of two-dimensional integration, large phase noise of devices, and few resonant cavities, achieving small size, reducing phase noise, and improving emission The effect of power

Inactive Publication Date: 2017-08-04
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But if the planar Gunn device is placed in a rectangular waveguide resonator, it will lose its two-dimensional integration advantage, so the best way is to put it in a resonator with a two-dimensional planar structure
However, there are still few research reports on resonant cavities suitable for planar Gunn devices.
The reported planar resonators generally have the problem of high phase noise of the device due to low Q value, and usually have a large size

Method used

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  • High-power and low-noise planar Gunn diode and preparation method thereof
  • High-power and low-noise planar Gunn diode and preparation method thereof

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Embodiment 1

[0043] A high-power and low-noise planar Gunn diode, comprising an insulating substrate 1, a channel layer 2, and a coplanar waveguide 5 arranged on the channel layer 2, the resonant cavity length of the coplanar waveguide 5 is half of the resonance Integer multiples of the wavelength, the characteristic impedance of the coplanar waveguide 5 at the resonant frequency is equal to the load impedance 50Ω.

[0044] The load impedance is 50Ω, and the resonant frequency is 100GHz. At this time, the ratio of the width of the central wire of the coplanar waveguide 5 to the width of the electrode gaps on both sides is about 3.3:2.

[0045] The material of the coplanar waveguide 5 is silver, gold and copper, and the thickness of the coplanar waveguide 5 is greater than three times of the skin depth. The advantage of the design here is to reduce the loss and improve the Q value of the resonant cavity.

[0046] Such as figure 2 As shown, the coplanar waveguide 5 propagates electromagneti...

Embodiment 2

[0056] The preparation method of the planar Gunn diode described in embodiment 1, concrete steps comprise:

[0057] (1) Use semi-insulating InP as the insulating substrate 1, and use MBE epitaxy to grow 300nm n-type In on the insulating substrate 1 0.53 Al 0.47 As is used as the buffer layer, 300nm n-type InGaAs is used as the channel layer 2, and the doping concentration of the channel layer 2 is 1×10 16 cm -3 . 200nm heavily doped InGaAs is epitaxially grown on the channel layer 2 as the cap layer 3, and the doping concentration of the cap layer 3 is 1×10 18 cm -3 .

[0058] (2) Spin-coat PMMA electron beam glue on the sample as an etching mask, and use electron beam exposure equipment to expose PMMA electron beam glue to form a mesa pattern. Use a 3:1 mixed solution of phosphoric acid and hydrogen peroxide to etch the mesa to form electrical isolation between devices. Remove residual PMMA e-beam glue.

[0059] (3) Spin-coat PMMA electron beam glue on the sample as a...

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Abstract

The invention relates to a high-power and low-noise planar Gunn diode and a preparation method thereof. The high-power and low-noise planar Gunn diode comprises an insulation substrate, a channel layer, and a coplanar waveguide arranged above the channel layer, the length of a resonant cavity of the coplanar waveguide is integer multiples of one half of the resonance wavelength, and the characteristic impedance of the coplanar waveguide and the impedance (usually 50 ohm) of a load are the same with the resonant frequency. The planar Gunn diode is arranged in the resonant cavity of the coplanar waveguide so that the planar Gunn device can operate in a resonance mode, the emission power, the conversion efficiency and the frequency stability of the planar Gunn device are greatly improved, and the phase noise is reduced.

Description

technical field [0001] The invention relates to a high-power, low-noise planar Gunn diode and a preparation method thereof, in particular to a high-frequency, high-power, low-phase noise planar Gunn diode, belonging to the technical field of diodes in microwave devices. Background technique [0002] The Gunn diode was first discovered in 1963 by J.B. Gunn. The Gunn diode utilizes the differential negative resistance effect of certain semiconductor materials (such as GaAs, InP, GaN, etc.) when electrons transition from low-energy valleys to high-energy valleys because the effective mass of electrons increases and the saturation drift speed decreases. . [0003] The traditional Gunn device is to form electrical contacts on the front and back of the semiconductor substrate, and the current flows perpendicular to the electrode plane, so it is also called a vertical Gunn device. As a small high-frequency signal source, the vertical Gunn device is widely used in radar, communica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L23/58H01L23/64H01L21/329
CPCH01L23/58H01L23/64H01L29/0603H01L29/0684H01L29/66128H01L29/8611
Inventor 王汉斌宋爱民王卿璞
Owner SHANDONG UNIV
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