69results about How to "Improve resonance characteristics" patented technology

Provided is a transmitter in a wireless power transmission system, the transmitter including a Transmission (Tx) power converter for converting a Direct Current (DC) voltage into a first Alternating Current (AC) voltage, and converting the converted first AC voltage into a second AC voltage by amplifying the converted first AC voltage, a Tx matching circuit for matching an impedance thereof with that of a receiver for receiving the second AC voltage to transmit the second AC voltage, a Tx resonator for resonating the second AC voltage into resonant waves to transmit the second AC voltage to the receiver, and a Tx controller for determining an amplification rate of the first AC voltage and controlling the Tx power converter to convert the first AC voltage into the second AC voltage according to the determined amplification rate.

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO₂ and Al₂O₃, respectively, Al₂O₃ having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.

An elastic wave device includes a medium layer, a piezoelectric body, and an IDT electrode that are disposed on a supporting substrate. The medium layer is made of a medium containing a low-velocity medium in which a propagation velocity of a same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than a propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave.

An acoustic drum includes: a shell having first and second, spaced apart ends, and an interior surface defining an interior volume; a drumhead stretched over the first end of the shell; and at least one resonator coupled at one edge in lever fashion to the interior surface of the shell, the at least one resonator being sized and shaped to resonate at a frequency proximate to a peak resonant frequency of the drum.

An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ν. The oblique angle ν is about 0.4° or more and about 10° or less.

A piezoelectric substrate and interdigital electrode portions are covered with an insulating layer with an insulating thin film interposed therebetween. The piezoelectric substrate is made of LiTaO₃ and the insulating thin film and the insulating layer are made of silicon oxide. By intentionally making the upper surface of the insulating layer flat, the deterioration of propagation efficiency of surface acoustic waves can be suppressed, so that it is possible to reduce increase in insertion loss of a resonator. Since the upper surface of the insulating layer is flat, it is also possible to reduce variation in resonant frequency and anti-resonant frequency due to the temperature change of the surface acoustic wave device.

The invention relates to a method for extracting resonance information of a long-line wind farm grid connection, comprising the following steps: 1) establishing an equivalent model of a wind farm grid connection; 2) obtaining the wind farm grid connection system according to the wind farm grid connection equivalent model Nodal admittance matrix; 3) decompose said nodal admittance matrix into expressions about eigenvalues: Y _f = LΛT; 4) According to step 3), the resonance participation factor of each node and the resonance sensitivity value of each electrical component are obtained when the long-line wind farm grid-connected resonance phenomenon occurs. Compared with the prior art, the present invention is based on the equivalent model of wind farm grid connection, and uses modal analysis method to analyze the resonance participation factors of each node of the system and the modal sensitivity of components, thereby giving detailed wind power grid connection resonance information, providing wind power It provides theoretical guidance for field construction planning, and has the advantages of accurate and reliable information extraction results.

An electronic component package according to the present invention includes a case (1) having a cavity portion containing an electronic component therein, and a lid member (8) fusion-welded to the case (1) via a fusion-welding layer (20) to close the cavity portion hermetically. The case (1) has a first metal layer (5) laminated on the case (1) in a manner to be exposed on the cavity open side. The lid member (8) has a core portion (9), and a second metal layer (10) laminated on a side of the core portion (9) facing the case (1). The fusion-welding layer (20) has a soldering material layer (12A) formed of a soldering material, and first and second intermetallic compound layers (5A) and (10A), respectively, formed on opposite sides of the soldering material layer (12A) as a result of diffusion of a major component of the soldering material into the first metal layer (5) and the second metal layer (10). The ratio of the area of the first and second intermetallic compound layers (5A) and (10A) in a longitudinal section of the fusion-welding layer (20) to the area of the longitudinal section of the fusion-welding layer (20) is in a range of from 25 to 98%. This package maintains superior airtightness even when exposed to a high-temperature atmosphere, which is higher than the melting point of the soldering material.

The invention discloses a design method of a miniaturization label buckling antenna of a tire embedded radio frequency identification device (RFID). The design method comprises the following steps of determining geometric dimension of bending units and input impedance of a label chip; determining quantity of the bending units in the horizontal direction; determining quantity of the bending units in the vertical direction; adjusting width of a meander line to enable antenna gain to be maximum; and increasing feed ends and adjusting loop inductance to enable the antenna impedance to be in conjugate match with the chip impedance. The design method is simple, effective and convenient to design, has good impedance matching characters, and enables the miniaturization label buckling antenna to be maximum in radiation gain and low in cost. Simultaneously, the design method can be applied to RFID application fields of communication, industrial control, equipment manufacturing, intelligent agriculture, food safety and the like.

An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.

The invention discloses a leadless piezo-electric ceramics and middle-frequency resonator with high-m niobate K-Na group, which is characterized by the following: the component is displayed at (NaxK1-x+delta)Nb1+zO3+wmolCuO(0<=x<=1,0<=delta<=0.1, 0<=z<=0.2,0<=w<=0.1); the central frequency is 455kHz, which is consistent with leadless piezo-electric ceramic middle-frequency resonator; the band breadth Bw is between 10kHz and 25kHz with resonant impedance Zi less than 300 omega.

An object is to provide a film bulk acoustic resonator capable of improving resonant characteristics by reducing the generation of a standing wave to be caused by a transverse-mode acoustic wave to a minimum. In a film bulk acoustic resonator including a resonant portion A having a piezoelectric material layer 3 sandwiched between a first electrode 2 and a second electrode 4, the resonant portion A is configured to have a planar shape that is an ellipse having a part thereof cut off along a straight line L. The straight line L intersects at least one of a minor axis and a major axis of the ellipse, and preferably intersects both the minor axis and the major axis, and passes through the center of the ellipse.

The invention discloses a loop coupling broadband miniaturized conical helical antenna which comprises a two-arm conical helical radiator, a medium supporting frustum, a feed balun, a feed connector, a cable joint, a coupling ring and a medium plate, wherein the two-arm conical helical radiator is attached to the surface of the medium supporting frustum, the feed balun is embedded into a center shaft in the medium supporting frustum, the two-arm conical helical radiator is connected with the upper end of the feed balun through the feed connector, the cable joint is connected with the lower end of the feed balun, the coupling ring is placed below the two-arm conical helical radiator and keeps a certain distance from the two-arm conical helical radiator, and the medium plate is arranged below the medium supporting frustum and plays a role in supporting the whole antenna. Miniaturization, wide broadband and high efficiency of the helical antenna can be achieved.

A method of producing a surface acoustic wave device includes a sacrificial-layer forming step of forming a sacrificial layer on a piezoelectric substrate so as to cover comb electrodes and reflectors, a space-forming-member forming step of forming a space-forming member while openings are formed near the reflectors along a surface of the sacrificial layer, a sacrificial-layer removing step of removing the sacrificial layer from the openings of the space-forming member, and a resin sealing step of sealing a surface acoustic wave element with sealing resin, the surface acoustic wave element having an excitation protection space formed between the reflectors and the comb electrodes by the space-forming member.

A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The antenna structure can be produced in a joint operation with the electrically conductive layer. The antenna structure is connected to a microchip, so that data can be written in or read out without contact in a wireless transponder system.

The invention relates to and discloses a micro-strip antenna facing an optical and microwave coaxial detection application. The micro-strip antenna solves the problem that an existing micro-strip antenna can not achieve optical detection while emitting and receiving an electromagnetic wave. The micro-strip antenna comprises a transparent medium plate, a rasterization earth plate, a rasterization micro-strip patch, a rasterization micro-strip feeder line and a wave guide port, wherein the rasterization earth plate is fully spread on the lower surface of the transparent medium plate, the rasterization micro-strip patch is spread on the upper surface of the transparent medium plate, the center of the transparent medium plate and the center of the rasterization micro-strip patch coincide, the wave guide port is fixed on the side face of the transparent medium plate and is located at the middle position of the long edge of the transparent medium plate, the rasterization micro-strip feeder line is spread on the upper surface of the transparent medium plate and located between the wave guide port and the rasterization micro-strip patch, feed electricity is transmitted to the rasterization micro-strip feeder line and the rasterization earth plate through the wave guide port, and the rasterization micro-strip feeder line transmits the received feed electricity to the rasterization micro-strip patch. The micro-strip antenna is used for the coaxial optical detection of the optical and microwave detection.

IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by λ, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/λ of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaO₃ substrate whose rotational cut angle θ from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.

The invention discloses a wide-passband 3D frequency selection surface, and aims to improve the angle stability of the wide-passband 3D frequency selection surface. The wide-passband 3D frequency selection surface comprises mXn passive resonance units; each resonance unit comprises five layers of dielectric plates and four metal layers; each metal layer comprises four trapezoidal annular structures on the upper surface of the upper layer of the dielectric plate and the lower surface of the lower layer of the dielectric plate; the upper surface and the lower surface of the intermediate layer ofthe dielectric plate surround a square metal ring structure formed by the four edges of the dielectric plate, and two groups of 2X2 square ring structures in a square metal ring; the centers of the first group of the square ring structures are located at the four opposite corners of the dielectric plate; the centers of the second group of the ring structures are located on the center points of the center connecting lines of the adjacent first group of the ring structures; and the trapezoidal annular structures on the upper surface of the upper layer of the dielectric plate and the lower surface of the lower layer of the dielectric plate are correspondingly connected through lead wires. According to the structure, the angle stability is improved while edge steep drop and wide passband arerealized, so that the wide-passband 3D frequency selection surface can be applied to the situation of large incident angles and can be applied to the aspects of communication and radars.

A ladder filter includes a series arm resonator and parallel arm resonators including a first parallel arm resonator defining a pass band together with the series arm resonator, and a second parallel arm resonator. Each of dimensions, in an overlap width direction, of gap regions between the overlap width region and first and second busbars in the second parallel arm resonator is larger than a dimension, in the overlap width direction, of a gap region in the first parallel arm resonator. A resonant frequency of the second parallel arm resonator is in a frequency range of not lower than a resonant frequency of the series arm resonator.

Disclosed herein is a subminiature internal antenna, which exhibits a multi-band characteristic. The internal antenna includes a radiator electrically coupled at one end thereof to a feed element of a communication device and formed in a spiral shape as a whole. The radiator is disposed in such a manner as to extend at the other end thereof outwardly from the spiral shape. According to the present invention, the electromagnetic coupling is achieved in the radiator of the internal antenna and the other end of the radiator is disposed outwardly from the spiral shape so that the radiation interference is reduced to thereby obtain the multi-band characteristic.

The invention relates to a high-power and low-noise planar Gunn diode and a preparation method thereof. The high-power and low-noise planar Gunn diode comprises an insulation substrate, a channel layer, and a coplanar waveguide arranged above the channel layer, the length of a resonant cavity of the coplanar waveguide is integer multiples of one half of the resonance wavelength, and the characteristic impedance of the coplanar waveguide and the impedance (usually 50 ohm) of a load are the same with the resonant frequency. The planar Gunn diode is arranged in the resonant cavity of the coplanar waveguide so that the planar Gunn device can operate in a resonance mode, the emission power, the conversion efficiency and the frequency stability of the planar Gunn device are greatly improved, and the phase noise is reduced.