Linear gradient doped GaAs planar gunn diode and manufacturing method thereof

Abstract

The invention discloses a linear gradient doped GaAs planar gunn diode which comprises a semiconductor insulating substrate, a highly doped lower bottom surface N<+> layer, a linear gradient doped N<-> type layer, a heavily doped upper surface N<+> layer, a table-board structure, an upper electrode and a lower electrode, wherein the semiconductor insulating substrate is used for supporting the whole GaAs planar gunn diode; the highly doped lower bottom surface N<+> layer epitaxially grows on the semiconductor insulating substrate; the linear gradient doped N<-> type layer epitaxially grows on the lower bottom surface N<+> layer; the upper surface N<+> layer epitaxially grows on the linear gradient doped N<-> type layer; the table-board structure is formed on the upper surface N<+> layer and the lower bottom surface N<+> layer through an island digging and insulating; the upper electrode in an ohmic contact is formed on the upper surface N<+> layer by metal evaporation; and the lower electrode in an ohmic contact is formed on the lower bottom surface N<+> layer by metal evaporation. The invention also discloses a method for manufacturing the linear gradient doped GaAs planar gunn diode. By utilizing the linear gradient doped GaAs planar gunn diode, the working frequency of oscillating circuits within the ranges of millimeter waves and submillimeter waves is increased, and the conversion efficiency from direct current to ratio frequency is enhanced.

Description

technical field [0001] The invention relates to the technical field of diodes in microwave devices, in particular to a linear gradient doped GaAs planar Gunn diode and a manufacturing method thereof. Background technique [0002] Oscillators based on nonlinear devices such as Gunn diodes are often used as high-frequency local oscillator sources. Gunn diodes are active nonlinear devices of millimeter-wave oscillators. Due to the continuous development of high-quality semiconductor material manufacturing, processing technology and assembly technologies, the devices show excellent performance. At the same time, the preparation process of Gunn diodes is simple and the structure is flexible, so they are not only used as local oscillator sources for various receiver mixers, but also can be used as small and medium power signal sources in radar, communication, space technology, etc., and are currently the most widely used. semiconductor oscillator. [0003] conventional Gunn diod...

AI Technical Summary

Problems solved by technology

This kind of doped double-terminal Gunn diode cannot directly tune the output oscillation frequency by using DC voltage, which is not conducive to the realization of monolithic integration, resulting in the need for a large number of device carriers, external bias circuits and metal waveguides in the system.

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