Ka-band monolithic integrated voltage-controlled oscillator based on plane gunn diode

Abstract

The invention discloses a ka-band monolithic integrated voltage-controlled oscillator based on a plane gunn diode. The ka-band monolithic integrated voltage-controlled oscillator is characterized by comprising a direct current bias voltage input unit, an input lowpass filter, an output interpolation coupling capacitor, the plane gunn diode with a hot electron injection effect and a resonator which are connected in sequence. A direct current bias voltage is fed from a middle conductor of the direct current bias voltage input unit and is fed by connecting a central microstrip line of the input lowpass filter and an upper end metal arm of the output interpolation coupling capacitor with one end of a top layer anode of the plane gunn diode with the hot electron injection effect. According to the ka-band monolithic integrated voltage-controlled oscillator, a monolithic microwave integrated circuit and coplanar waveguide technology is employed; a self-bias circuit structure is employed; a circuit structure is simple; monolithic integration is easy to realize; and a complicated cavity waveguide packaging assembly is unnecessary. According to the ka-band monolithic integrated voltage-controlled oscillator, the plane gunn diode with the hot electron injection effect is introduced, so that the direct current-radio frequency conversion efficiency of the voltage-controlled oscillator is effectively enhanced.

Description

technical field [0001] The invention belongs to the technical field of microwave integrated circuits in microelectronics, and in particular relates to a Ka-band single-chip integrated voltage-controlled oscillator based on a planar Gunn diode. Background technique [0002] Gunn diodes are also called transfer electronic devices. When the applied bias voltage is greater than its threshold voltage, it has a negative differential resistance characteristic. The negative differential resistance can offset the real positive resistance to form a zero-resistance circuit, obtain infinite oscillation, and generate output RF / microwave signals. Oscillators with Gunn diodes as nonlinear elements have a simple working principle and simple design ideas. They are usually used as the local oscillator source of mixers in various receivers, and as small and medium power oscillators in various microwave modules in radar and communication systems. signal source. Due to the limitations of mater...

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Problems solved by technology

[0003] Usually, the traditional Gunn diode adopts uniform doping on the N-type layer, and mainly adopts vertical structure, which cannot be integrated with peripheral circuit components, and the Gunn diode current under positive and negative bias voltages has symmetry

The oscillating circuit with the traditional Gunn diode as the core, based on cavity waveguide packaging technology, uses waveguide mechanical tuning to adjust the frequency and power of the output oscillating signal. Monolithic integration of other circuits in the system results in the need for a large number of bulky components such as device carriers, external bias circuits, and metal waveguides in the system

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