Gunn diode, preparation method and millimeter wave oscillator thereof

A millimeter-wave oscillator and Gunn diode technology, applied in resonators, waveguide devices, body negative resistance effect devices, etc., can solve the problems of multi-waveguide cavities with complex structures, complex circuits, and large footprints, and achieve high resolution. Low frequency output power, increased output power and high working stability

Active Publication Date: 2012-10-17
北京中科微投资管理有限责任公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

Although the structure proposed by Kaneko et al. shows the feasibility of increasing power output at a single point frequency by using multi-tube po...

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  • Gunn diode, preparation method and millimeter wave oscillator thereof
  • Gunn diode, preparation method and millimeter wave oscillator thereof
  • Gunn diode, preparation method and millimeter wave oscillator thereof

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Embodiment Construction

[0031] In order to deeply understand the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] The present invention is described in detail by taking an InP Gunn diode, its preparation method and a millimeter-wave oscillator based on the Gunn diode as examples.

[0033] See attached figure 1 The InP Gunn diode provided by the present invention includes an integrated heat sink 7 , a deposition electrode 6 , an InP transition layer 4 , an InP second contact layer 3 , a top electrode 2 and a gold thickened electrode 1 from bottom to top.

[0034] Wherein, an InP first contact layer 5 is also included between the metal electrode and the transition layer.

[0035] Among them, the material of the integrated heat sink 7 can be gold, and the thickness can be 25 μm; the components and their ratios in the deposition electrode 6 can be Ni:Ge:Au:Ge:Ni:Au=40:40:660:80:30 : The thicknes...

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Abstract

The invention discloses a Gunn diode, a preparation method and a power synthesis millimeter wave oscillator of the Gunn diode, belonging to the technical field of semiconductor devices. The Gunn diode sequentially comprises an integrated hear sink, a metal diode, a transition layer, a second contact layer, a top electrode and a gold thickening electrode from bottom to top. The preparation method comprises the following steps: growing a first contact layer, the transition layer and the second contact layer orderly on the semiconductor substrate, corroding a deep groove, evaporating the electrodes and electroplating the heat sink on the sample surface, removing the substrate, evaporating the top electrode, and conducting dry etching to form the Gunn diode. The millimeter wave oscillator seals the prepared Gunn diodes having good uniformity under a resonance cap in a waveguide cavity in pairs and at intervals of lambadag/2. According to the method, the processing fragility of the material is reduced, the heat dissipation performance of the device is improved, and the device performance difference is reduced. The millimeter wave oscillator outputs the radio frequency after multiple Gunn diodes are coupled, so that the output power is increased by times.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a Gunn diode with good consistency, a preparation method thereof and a power coupling output millimeter wave oscillator based on the Gunn diode. Background technique [0002] Millimeter wave has the characteristics of high spatial / time resolution, atmospheric window frequency band up to tens of THz, which can be used to explore the structure of matter, high signal-to-noise ratio and good penetration. At present, millimeter waves have shown an important strategic position and excellent application prospects in many fields such as military defense, national security, and national economy. The oscillator used to generate milliwaves is usually a Gunn diode, and the Gunn diode is generally made of compound semiconductor materials such as GaAs and InP. Electron mobility in these compound semiconductor materials is as high as thousands of cm under weak field 2 / V, electr...

Claims

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Application Information

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IPC IPC(8): H01L47/02H01L47/00H01P7/00
Inventor 武德起贾锐金智刘新宇叶甜春
Owner 北京中科微投资管理有限责任公司
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