Gunn diode, preparation method and millimeter wave oscillator thereof

Abstract

The invention discloses a Gunn diode, a preparation method and a power synthesis millimeter wave oscillator of the Gunn diode, belonging to the technical field of semiconductor devices. The Gunn diode sequentially comprises an integrated hear sink, a metal diode, a transition layer, a second contact layer, a top electrode and a gold thickening electrode from bottom to top. The preparation method comprises the following steps: growing a first contact layer, the transition layer and the second contact layer orderly on the semiconductor substrate, corroding a deep groove, evaporating the electrodes and electroplating the heat sink on the sample surface, removing the substrate, evaporating the top electrode, and conducting dry etching to form the Gunn diode. The millimeter wave oscillator seals the prepared Gunn diodes having good uniformity under a resonance cap in a waveguide cavity in pairs and at intervals of lambadag / 2. According to the method, the processing fragility of the material is reduced, the heat dissipation performance of the device is improved, and the device performance difference is reduced. The millimeter wave oscillator outputs the radio frequency after multiple Gunn diodes are coupled, so that the output power is increased by times.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a Gunn diode with good consistency, a preparation method thereof and a power coupling output millimeter wave oscillator based on the Gunn diode. Background technique [0002] Millimeter wave has the characteristics of high spatial / time resolution, atmospheric window frequency band up to tens of THz, which can be used to explore the structure of matter, high signal-to-noise ratio and good penetration. At present, millimeter waves have shown an important strategic position and excellent application prospects in many fields such as military defense, national security, and national economy. The oscillator used to generate milliwaves is usually a Gunn diode, and the Gunn diode is generally made of compound semiconductor materials such as GaAs and InP. Electron mobility in these compound semiconductor materials is as high as thousands of cm under weak field 2 / V, electr...

AI Technical Summary

Problems solved by technology

Although the structure proposed by Kaneko et al. shows the feasibility of increasing power output at a single point frequency by using multi-tube power coupling, the circuit for providing tube bias is too complicated; the multi-waveguide cavity structure is too complicated and takes up too much space

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