A kind of terahertz gan Gunn diode and its manufacturing method

Abstract

The invention relates to a Terahertz GaN Gunn diode and a manufacturing method thereof. The Terahertz GaN Gunn diode comprises a cathode, an n type GaN substrate, an n+ GaN cathode ohmic contact layer, an InAlN three-dimensional structure electronic emission layer, an n-GaN transition layer, an n+ GaN anode ohmic contact layer, and an anode which are successively arranged from bottom to top, and also comprises an SiN passivation layer arranged on the n type GaN substrate, and covering the n+ GaN cathode ohmic contact layer, the InAlN three-dimensional structure electronic emission layer, the n-GaN transition layer, the n+ GaN anode ohmic contact layer, and the anode; the upper portion of the SiN passivation layer is provided with an open pore exposing the anode. The Terahertz GaN Gunn diode employs a three-dimensional structure InAlN electric emission layer structure, and substantially increases the output power density of a GaN Gunn diode under a same size.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a terahertz GaN Gunn diode and a manufacturing method thereof. Background technique [0002] Compared with traditional semiconductor materials (Si and GaAs), GaN has excellent performance in terms of frequency and output power. GaN-based Gunn diodes have shown broad application prospects in the terahertz field (100GHz-10THz). Relevant theoretical studies have predicted that GaN Gunn diodes with submicron transition layers can generate at least 200 GHz oscillation frequency, and the RF power density is at least 2 times higher than other traditional III-V compound Gunn diodes. [0003] In the traditional n+ / n / n+ Gunn device structure, electrons must travel a long distance to obtain enough energy, which limits the operating frequency of the device. In recent years, an n+ / n- / n / n+ diode structure has been proposed internationally to replace the original n+...

AI Technical Summary

Problems solved by technology

However, the InAlN electron emission layer structure in the prior art fails to solve the problems of low output power density, low conversion efficiency, and high power consumption of the device.

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