3 results about "Copper phthalocyanine" patented technology

Provided: A simple method for manufacturing ε-type copper phthalocyanine, which has excellent color characteristics such as contrast and brightness and is useful as a color filter for use in liquid crystals, etc. A method for manufacturing an ε-type copper phthalocyanine pigment composition includes the following steps: treating phthalimide methyl copper phthalocyanine with a nonionic surfactant to obtain treated phthalimide methyl copper phthalocyanine; and milling a mixture containing α-type copper phthalocyanine, ε-type copper phthalocyanine, and the treated phthalimide methyl copper phthalocyanine with a solvent salt to obtain a pigment composition.

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

The present disclosure provides a method for preparing a gas sensing wafer, comprising the following steps. A two-dimensional semiconductor is provided. An enhanced gas selective compound is coated on a surface of the two-dimensional semiconductor. The enhanced gas selective compound comprises at least one of hexagonal boron nitride, zeolitic imidazolate framework, and copper phthalocyanine. In this way, by coating the enhanced gas selective compound on the two-dimensional semiconductor, the sensitivity, selectivity, and stability of the gas sensing wafer can be improved. The present disclosure also relates to a gas sensing device.