Method for growing high-dielectric constant dielectric lamination
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A high dielectric constant, dielectric technology, used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., to avoid electrical performance degradation, avoid ion damage and interface oxidation, and accurately control the film thickness.
Inactive Publication Date: 2013-09-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0006] In view of this, the present invention is based on the process requirements of the existing high dielectric constant dielectric, aiming at the deficiency o
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[0040] Example 1
[0041] A preferred embodiment of the present invention applied to a MOS process with a micron-level gate length will be described in detail below with reference to the accompanying drawings.
[0042] Step 1) Clean the substrate:
[0043] Rinse the GaAs substrate with MOS-grade acetone for 5 minutes, and apply ultrasound in a water bath with a power of 15W;
[0044] Rinse with MOS-grade ethanol for 5 minutes, and then apply ultrasound with a power of 15W in a water bath;
[0045] Rinse with deionized water for 3 minutes and blow dry with high-purity nitrogen;
[0046] Soak the GaAs substrate with hydrochloric acid and deionized water with a volume ratio of 1:10 for 1 minute;
[0047] Soak in MOS-grade ammonia water for 5 minutes;
[0048] Rinse with deionized water for 3 minutes and blow dry with high-purity nitrogen.
[0072] An embodiment of the present invention applied to a MOS process with a micron-scale gate length will be described in detail below with reference to the accompanying drawings.
[0073] Step 1) Clean the substrate:
[0074] Rinse the GaAs substrate with MOS-grade acetone for 5 minutes, and apply ultrasound in a water bath with a power of 15W;
[0075] Rinse with MOS-grade ethanol for 5 minutes, and then apply ultrasound with a power of 15W in a water bath;
[0076] Rinse with deionized water for 3 minutes and blow dry with high-purity nitrogen;
[0077] Soak the GaAs substrate with hydrochloric acid and deionized water with a volume ratio of 1:10 for 1 minute;
[0078] Soak in MOS-grade ammonia water for 5 minutes;
[0079] Rinse with deionized water for 3 minutes and blow dry with high-purity nitrogen.
[0080] like figure 2 shown.
[0081] Step 2) Thermal Mode ALD Oxide:
[0082] Here thermal mode atomic layer deposition of 0A oxide was carri...
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Abstract
The invention discloses a method for growing a high-dielectric constant dielectric lamination. The method comprises the following steps: growing a first layer of high-dielectric constant dielectrics on a substrate by adopting a hot-mode atomic layer deposition method; growing a second layer of high-dielectric constant dielectrics on the first layer of high-dielectric constant dielectrics by adopting a plasma enhanced-mode atomic layer deposition method. According to the method disclosed by the invention, compared with the high-dielectric constant dielectrics obtained by single-mode deposition, the laminated high-dielectric constant dielectrics obtained by utilizing compound-mode atomic layer deposition not only are capable of avoiding the ion damage and the interface oxidation of the surface of the substrate but also are capable of avoiding the phenomenon that electrical property is degraded due to the fact that devices are put in a high-temperature reaction cavity for a long time. Meanwhile, the laminated high-dielectric constant dielectrics have the advantages that the surface step coverage is good and the film thickness can be accurately controlled. The method for growing the high-dielectric constant dielectric lamination is compatible with a traditional silica-based semiconductor process.
Description
technical field [0001] The invention relates to a method for growing a high dielectric constant dielectric stack, which can comprehensively utilize the advantages of no ion damage and low interface oxidation of thermal mode atomic layer deposition, and the low temperature characteristics of plasma enhanced mode atomic layer deposition. Background technique [0002] The development of modern information industry is based on the development of microelectronics industry. While the performance of microelectronic devices is increasing day by day, the manufacturing technology of microelectronic devices is also facing major challenges. Semiconductor devices based on silicon substrate materials have adopted a number of innovations to improve the technical indicators of the device's operating frequency, power consumption, and integration. However, as the feature size of devices continues to shrink according to Moore's Law until entering the 22nm process era, silicon dioxide can no lo...
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IPC IPC(8): H01L21/316H01L21/318
Inventor 赵威刘洪刚孙兵常虎东
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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