A gallium arsenide solar cell and its preparation method

A technology of solar cells and multi-junction solar cells, applied in the field of solar cells, can solve problems such as limiting the full use of sunlight, reducing solar light transmittance, high absorption, etc., to achieve enhanced current collection capabilities and high solar light transmittance , Improve the effect of high absorption and strong reflection

Active Publication Date: 2021-06-01
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if ITO or AZO wants to achieve a good conductive effect, it needs a certain thickness, which will greatly reduce the transmittance of sunlight
In addition, ITO or AZO exhibits high absorption and strong reflection in the near-infrared region, which further limits its full use of sunlight.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A gallium arsenide solar cell and its preparation method
  • A gallium arsenide solar cell and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] The present invention is to described TiO 2 The preparation method of @AZO is not particularly limited, and preparation methods well known to those skilled in the art can be used to prepare TiO 2 The method of @AZO core-shell structure, in some specific embodiments provided by the present invention, the TiO used 2 The preparation method of @AZO is: make TiO 2 The particles are suspended in the cavity of the magnetron sputtering machine, and the AZO is evenly sputtered onto the TiO 2 Particle surface, thus obtaining the core-shell structure of TiO 2 @AZO.

[0042] The present invention uses TiO 2 as the core, AZO as the shell for TiO 2 The preparation of @AZO, and then this TiO 2 @AZO is used as the raw material to make the inner anti-reflection layer 5. Due to the addition of AZO, TiO 2 Has a good conductivity, on the other hand, the core-shell structure of TiO 2 @AZO changed the distribution form of AZO in the inner anti-reflection layer 5, and made it use the ...

Embodiment 1

[0067] 1) A P-type Ge substrate is provided as the substrate layer 2, and a Ge bottom cell, an InGaAs middle cell, a GaInP top cell, and a GaAs contact layer are sequentially grown on the substrate to form a gallium arsenide epitaxial layer 3 to obtain an epitaxial wafer with a substrate.

[0068] 2) Put the epitaxial wafer into the acetone solution and ultrasonically clean it for 10 minutes, then ultrasonically clean it in the isopropanol solution for 10 minutes, and spin-coat the negative photoresist to make the electrode mask pattern.

[0069] 3) Evaporate the metal material Au / AuGeNi / Au / Ag / Au on the upper electrode 4, and use the lift-off stripping process to obtain the upper electrode 4 (the shading rate of the grid line is 3.18%).

[0070] 4) Put the epitaxial wafer into the acetone solution for 10 minutes and ultrasonically clean it for 10 minutes, then ultrasonically clean it in the isopropanol solution for 10 minutes, and vapor-deposit the metal material Pd / Ag / Au of th...

Embodiment 2

[0076] 1) A P-type Ge substrate is provided as the substrate layer 2, and a Ge bottom cell, an InGaAs middle cell, a GaInP top cell, and a GaAs contact layer are sequentially grown on the substrate to form a gallium arsenide epitaxial layer 3 to obtain an epitaxial wafer with a substrate.

[0077] 2) Put the epitaxial wafer into the acetone solution and ultrasonically clean it for 10 minutes, then ultrasonically clean it in the isopropanol solution for 10 minutes, and spin-coat the negative photoresist to make the electrode mask pattern.

[0078] 3) Evaporate the metal material Au / AuGeNi / Au / Ag / Au on the upper electrode 4, and use the lift-off stripping process to obtain the upper electrode 4 (the shading rate of the grid line is 3.18%).

[0079] 4) Put the epitaxial wafer into the acetone solution for 10 minutes and ultrasonically clean it for 10 minutes, then ultrasonically clean it in the isopropanol solution for 10 minutes, and vapor-deposit the metal material Pd / Ag / Au of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a gallium arsenide solar cell and a preparation method thereof, belonging to the technical field of solar cells. In the gallium arsenide solar cell provided by the present invention, it includes a lower electrode, a substrate layer, a gallium arsenide epitaxial layer, an upper electrode, and an anti-reflection film in order from the backlight surface to the light-receiving surface of the cell; wherein, the anti-reflection film is a double layer structure, including TiO 2 @AZO is the inner anti-reflection layer and SiO made of raw materials 2 The outer anti-reflection layer is made of raw materials, the inner anti-reflection layer is arranged next to the upper electrode grid line, and the outer anti-reflection layer is arranged away from the upper electrode grid line; the TiO 2 @AZO for TiO 2 As the inner core, AZO is the core-shell structure of the outer shell. The battery uses TiO 2 @AZO is used as a raw material to be deposited on the surface of the upper electrode grid line or the surface of the epitaxial layer by vacuum evaporation to form an inner anti-reflection layer, which improves the conductive effect of the upper electrode and the transmittance of sunlight.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a gallium arsenide solar cell and a preparation method thereof. Background technique [0002] In recent years, my country's solar cell technology has developed rapidly. Gallium arsenide solar cells have the advantages of high conversion efficiency and excellent reliability, and are widely used in space vehicles, such as navigation satellites, communication satellites, space stations, and space probes. In the commonly used gallium arsenide solar cell, after the epitaxial structure is produced on the substrate, the upper and lower electrodes are made, and then the upper surface of the solar cell is coated with an anti-reflection film. The upper electrode is composed of two to three main grid lines and multiple thin grid lines. Sunlight shines into the solar cell from the gap between the grid lines, and the generated current flows out through the grid lines. In order to ensure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0304H01L31/06H01L31/18
CPCY02E10/50Y02P70/50
Inventor 王克来徐培强潘彬王向武
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap