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A rare-earth electro-induced deep blue light device

An optical device, dark blue technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of easy aging, poor OLED stability, blue light color distortion, etc., and achieve the effect of not easy aging, good stability, and high brightness

Active Publication Date: 2021-12-17
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention can widen the color gamut of the existing display, and solve the technical problems of poor OLED stability, easy aging and easy color distortion of blue light

Method used

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  • A rare-earth electro-induced deep blue light device
  • A rare-earth electro-induced deep blue light device
  • A rare-earth electro-induced deep blue light device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] In this embodiment, the light-emitting layer material is passivated CsEuBr 3 Taking an electroluminescent blue light device as an example, its specific preparation method includes the following steps:

[0039] a) Use detergent, deionized water, acetone and absolute ethanol to ultrasonically clean the substrate ITO in sequence, for half an hour each time; where, ITO uses a substrate that has been etched two times, and its light-emitting area is about 2mm*2mm;

[0040] b) Using magnetron sputtering method on ITO, sputtering Li-doped p-type NiO with a thickness of about 40nm, wherein the doping concentration is 10 16 -10 17 cm -3 ;

[0041] c) Put the substrate coated with NiO film into the evaporation glove box, and pump the vacuum to 4*10 -5 Below Pa, the substrate is heated to 200°C, and EuBr is evaporated at a speed of 0.11nm / s by co-evaporation 2 , CsBr was evaporated at a speed of 0.14nm / s, with a total thickness of 100nm. In the dual-source co-evaporation proc...

Embodiment 2

[0051] In this embodiment, the light-emitting layer material is passivated CsEuBr 3 Taking an electroluminescent blue light device as an example, its specific preparation method includes the following steps:

[0052] a) Use detergent, deionized water, acetone and absolute ethanol to ultrasonically clean the substrate ITO in sequence, for half an hour each time; where, ITO uses a substrate that has been etched two times, and its light-emitting area is about 2mm*2mm;

[0053] b) Using magnetron sputtering method on ITO, sputtering Li-doped p-type NiO with a thickness of about 40nm, wherein the doping concentration is 10 16 -10 17 cm -3 ;

[0054] c) Put the substrate coated with NiO film into the evaporation glove box, and pump the vacuum to 4*10 -5 Below Pa, the substrate is heated to 200°C, and EuBr is evaporated at a speed of 0.12nm / s by co-evaporation 2 , CsBr was vapor-deposited at a speed of 0.18nm / s, and a total thickness of 100nm was vapor-deposited.

[0055] d) Ta...

Embodiment 3

[0058] In this embodiment, the light-emitting layer material is passivated CsEuBr 3 Taking an electroluminescent blue light device as an example, its specific preparation method includes the following steps:

[0059] a) Use detergent, deionized water, acetone and absolute ethanol to ultrasonically clean the substrate ITO in sequence, for half an hour each time; where, ITO uses a substrate that has been etched two times, and its light-emitting area is about 2mm*2mm;

[0060] b) Using magnetron sputtering method on ITO, sputtering Li-doped p-type NiO with a thickness of about 40nm, wherein the doping concentration is 10 16 -10 17 cm -3 ;

[0061] c) Put the substrate coated with NiO film into the evaporation glove box, and pump the vacuum to 4*10 -5 Below Pa, the substrate is heated to 200°C, and EuBr is evaporated at a speed of 0.115nm / s by co-evaporation 2 , CsBr was evaporated at a speed of 0.16nm / s, and a total thickness of 100nm was evaporated.

[0062] d) Take the sh...

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Abstract

The invention belongs to the field of optoelectronic devices, and discloses a rare-earth electroinduced deep blue light device, which sequentially includes a top electrode, an electron transport layer, a light-emitting layer, a hole transport layer and a bottom electrode from top to bottom, wherein the light-emitting layer adopts The material is Eu-based perovskite-type material. In Eu-based perovskite-type material, Eu element occupies the perovskite ABX 3 The B site in the structure does not contain Pb; the electron transport layer and the hole transport layer are used to localize electrons or holes in the light-emitting layer and adjust the injection balance of electrons and holes. The present invention uses Eu-based perovskite materials (such as CsEuBr 3 ) is used as a light-emitting layer material to construct a rare-earth electro-induced deep blue light device. Since the material is an inorganic material, it has good stability, is not easy to age, and has a long life. Technical issues with color distortion.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and more specifically relates to a rare-earth electro-induced deep blue light device, which is especially suitable for deep blue photoluminescence in the wavelength range of 420nm-450nm. Background technique [0002] High-efficiency and stable electroluminescent blue light (blue LED) technology is the key point and difficulty that the scientific research and industrial circles urgently need to overcome. It has great scientific research and application value and great national strategic significance. Currently, organic light-emitting diode (OLED)-based displays have gradually become the mainstream advanced display technology and occupy the mid-to-high-end display market. However, OLED displays are still plagued by the low efficiency and short lifespan of blue light devices. The external quantum efficiency of blue LEDs in AMOLED displays is less than 10%, and the lifespan is less than one-tent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/00H10K50/11H10K2101/40H10K50/15H10K50/16
Inventor 唐江杨龙波罗家俊谭智方李京徽高亮
Owner HUAZHONG UNIV OF SCI & TECH
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