10results about How to "Increase opening pressure" patented technology

The invention discloses a TBC battery with a locally doped back surface and a preparation method of the TBC battery, and belongs to the field of TBC batteries. Wherein a P + + heavily-doped polycrystalline silicon layer and a P + lightly-doped polycrystalline silicon layer are arranged in the P + region or an N + + heavily-doped polycrystalline silicon layer and an N + lightly-doped polycrystalline silicon layer are arranged in the N + region to form a heavily-doped region and a lightly-doped region, so that the photoelectric conversion efficiency of the TBC battery can be effectively improved, the process is relatively simple, the cost increase is less, and the control difficulty is low.

The invention discloses a preparation method of a solar cell and the solar cell. The preparation method comprises the following steps: a main grid line of at least one main surface of the solar cell is formed by curing and printing low-temperature slurry, and other grid lines of the solar cell are formed by high-temperature sintering and printing high-temperature slurry except the main grid line formed by curing the low-temperature slurry. And the step of curing the printed low-temperature slurry is performed after the step of forming other grid lines. According to the scheme, the main grid lines on at least one main surface of the solar cell can be prevented from being in contact with the doping layer, so that the open voltage loss of the solar cell is effectively reduced.

The utility model provides a back contact type solar cell, and belongs to the technical field of solar cells. The back contact solar cell includes: a substrate; the doped layer is formed on the substrate and comprises N doped regions and P doped regions which are alternately arranged at intervals; the electrode layer is formed on the doping layer and comprises an N region electrode formed on the N doping region and a P region electrode formed on the P doping region; wherein the P-doped region, the N-doped region, the P-region electrode and the N-region electrode are constructed to meet the size relationship shown in the following formula: 1 / 2gt; a WP electrode / WP region gt; a WN electrode / WN region gt; the width of the WP electrode is equal to the width of the P-region electrode, the width of the WN electrode is equal to the width of the N-region electrode, the width of the WP region is equal to the width of the P-doped region, and the width of the WN region is equal to the width of the N-doped region. The sizes of the P-doped region, the N-doped region, the P-region electrode and the N-region electrode are designed, the passivation effect difference of the N-doped region and the P-doped region can be considered, the contact resistance of the N-doped region and the P-doped region is matched, and the cell efficiency is improved.

The invention discloses a method for improving the open-circuit voltage of a solar cell through a silver nanowire doped antimony sulfide thin film, and an absorption layer is a silver nanowire doped antimony sulfide thin film and is prepared through a hydrothermal method. Silver nanowires are added in the hydrothermal deposition process of the antimony sulfide thin film, the silver nanowires are used for regulating and controlling ion reaction, and antimony sulfide thin film crystallization and silver doping are achieved in the annealing crystallization process. A new dopant is developed to be applied to the antimony sulfide thin film and can adapt to a hydrothermal deposition technology, melting diffusion occurs to the silver nanowires in the high-temperature crystallization process, and the crystallinity of the antimony sulfide thin film is improved; close contact of a CdS / Sb2S3 heterojunction interface is achieved through the bridge bond effect of the silver nanowires, and the open-circuit voltage of the solar cell is obviously improved. The open-circuit voltage of the silver nanowire doped antimony sulfide solar cell is increased by more than 40 mV, and the highest open-circuit voltage reaches 805 mV. The method is novel in material and simple to operate, and has great application value and potential.

This application provides a solar cell and a method for fabricating the same. The solar cell includes: a substrate having a first surface, the first surface being located on the same side as the back surface of the solar cell, the solar cell including a first region and a second region on the back surface; a tunneling oxide layer disposed on one side of the first surface; a first doped layer disposed on one side of the first surface and located within the second region, and on the surface of the tunneling oxide layer facing away from the substrate, the first doped layer having a first doping concentration; a second doped layer disposed on the side of the first doped layer away from the first surface and located within the second region, the second doped layer having a second doping concentration lower than the first doping concentration; and a third doped layer disposed on one side of the first surface, the third doped layer having a third doping concentration higher than the first doping concentration. This application can reduce parasitic absorption of light, facilitate ion transport, and further improve cell performance.

The invention provides a composite electron transport layer, a preparation method thereof, a perovskite solar cell and application. The composite electron transport layer comprises a C60 layer, a SnO2 layer and an IWO layer which are stacked; the thickness of the SnO2 layer is larger than or equal to 60 nm, and the thickness of the IWO layer is smaller than or equal to 5 nm. The introduction of the thin IWO layer can improve the transmission rate of the electron transmission layer and improve the interface defect between SnO2 and the electrode, so that the battery has higher open voltage and stability. Moreover, the thick SnO2 layer can increase an electron transmission channel, so that photo-generated electrons can be transmitted to the electrode more quickly and efficiently, and the thin IWO layer can improve the light transmittance, increase the generation of photo-generated current, cooperate with the SnO2 layer, adjust the energy level matching between the perovskite layer and the electrode, promote charge transmission and reduce charge recombination. The perovskite solar cell prepared on the basis of the method shows excellent photoelectric conversion efficiency.

The invention discloses a silicon wafer texturing additive, a texturing solution and a use method of the texturing solution, and belongs to the field of photovoltaic technology, the texturing additive comprises the following components by weight: 0.05-0.5 wt% of a nucleating agent, 0.1-3.0 wt% of a nucleating reinforcing agent, 0.2-4.0 wt% of a surfactant, 0.2-3.0 wt% of a protective agent, 0.5-6.0 wt% of a protective reinforcing agent, and the balance of deionized water. After the texturing liquid prepared from the texturing additive is used for texturing a silicon wafer, the second doped regions on the front surface and the back surface of the silicon wafer are uniform in texturing structure and low in reflectivity, and meanwhile, the PSG layer of the first doped region on the back surface of the silicon wafer is not damaged, so that the minority carrier lifetime and the open voltage of a BC battery are improved, and the photoelectric conversion efficiency of the battery is improved.

The present invention relates to the technical field of H01B1 / 16, and specifically to a PERC crystalline silicon solar back side silver paste and a preparation method thereof. The silver paste comprises a silver powder paste combination, a mixed metal oxide paste and an inorganic auxiliary agent paste. The silver powder paste combination comprises a silver powder paste with a D50 of 50nm-1μm. By optimizing the back side silver paste formula, the silver content of the back side electrode silver paste for the PERC crystalline silicon solar cell is effectively reduced to 48-52% (weight percentage), thereby reducing the material cost of a cell sheet while ensuring the photoelectric conversion efficiency and welding performance of the cell sheet.

The invention discloses a back passivated contact heterojunction solar cell and a preparation method thereof. The cell comprises a crystalline silicon substrate, and the back side of the crystalline silicon substrate is provided with a back contact passivation structure composed of a tunneling oxide layer, a P+ doped nanocrystalline silicon / microcrystalline silicon layer, a nanocrystalline silicon / microcrystalline silicon layer and an N+ doped nanocrystalline silicon / microcrystalline silicon layer arranged alternately, and a back anti-reflection passivation layer. The preparation method comprises the steps of injecting boron ions and phosphorus ions into the nanocrystalline silicon / microcrystalline silicon film in an ion implantation manner and performing annealing to form P+ doped regions and N+ doped regions arranged alternately. The back passivated contact heterojunction solar cell of the invention has the characteristics of high conversion efficiency, which can be as high as 25% or more. The preparation method thereof also has the advantages of simple process, convenient operation, low cost, etc., which is beneficial to the conversion efficiency and yield of the cell, suitable for large-scale preparation, and beneficial to industrial application. It is of great significance to promote the industrial application of HBC cells.

This invention discloses a high-efficiency, high-weld-strength main grid silver paste adapted to the LECO process and its application. The silver paste comprises silver powder, glass powder, and an organic carrier; wherein the glass powder comprises a Pb-B-Te-Zn glass system. This invention introduces a novel Pb-B-Te-Zn glass system into the paste, thereby giving the glass components better fluidity and etching ability during sintering. The silver powder and silicon wafer act as a strong bond, greatly improving the weld pull value. Furthermore, the paste fuses better with the solder ribbon, exhibits strong tin melting ability, and possesses a good weld fracture surface. It has a wide sintering window, making it compatible with the LECO process where the peak temperature of the existing sintering furnace decreases, reducing the fabrication cost of solar cells. It also enhances the fusion between the front main grid paste and the front fine grid paste, effectively improving the cell's on-state voltage and open-circuit flyback (FF), further improving the cell's photoelectric conversion efficiency.