85results about How to "Increase opening pressure" patented technology

The invention provides a back junction and back contact solar cell structure and a preparation method thereof. The cell structure sequentially comprises an anti-reflection layer (1), a passivation film (2), an N+ doped layer (3), an N type silicon substrate (4), a back P+ doped layer (5), a Topcon structure and cell electrodes from top to bottom, wherein the back P+ doped layer (5) and the Topconstructure are distributed on the same layer in a crossed manner, the Topcon structure comprises an ultrathin oxide layer (6) and an N+ polycrystalline silicon/amorphous silicon layer (7), the cell electrodes comprise a positive electrode (8) and a negative electrode (9), the positive electrode (8) is in contact with the P+ doped layer (5), and the negative electrode (9) is in contact with the N+ polycrystalline silicon/amorphous silicon layer (7). According to the invention, the N+ back doped region of the back doped layer in the prior art is changed into the Topcon structure, so that the complexity of the technological process is not increased while the voltage of the battery is increased, and the kilowatt-hour cost of the battery is fundamentally reduced.

The invention discloses a PERC (Passivated Emitter and Rear Contact) solar cell. The PERC solar cell comprises a silicon wafer layer with a PN junction, and a passivation layer and a metal layer which are arranged in sequence on a back side of the silicon wafer layer, wherein the passivation layer is provided with an open area; the surface of the solar cell is provided with a back electrode; and based on a plane on which a silicon wafer is positioned, the position of the back electrode does not coincide with the position of the open area. The position of the back electrode does not coincide with the position of the open area, so that compounding between metal and naked silicon on an opening is reduced, and an open voltage of the cell is increased. As proved by experiments, compared with an existing structure, the structure of the PERC solar cell has the advantages that the cell conversion efficiency can be increased by 0.1 percent, and an unexpected effect is achieved.

The invention discloses a solar cell crystal silicon wafer phosphorus diffusion method. The method comprises the following steps: 1) a to-be-processed crystal silicon wafer is placed in a diffusion furnace, temperature is raised, and nitrogen carrying a phosphorus source, dry oxygen and large nitrogen are introduced, constant-source diffusion is carried out; 2) introduction of the nitrogen carrying the phosphorus source is stopped, temperature is raised, the dry oxygen and the large nitrogen are introduced to perform propelling; 3) the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and low-temperature diffusion is carried out; 4) the introduction of the nitrogen carrying the phosphorus source is stopped, and constant-temperature propelling is carried out; 5) temperature is raised, the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and constant-source diffusion is carried out; 6) the introduction of the nitrogen carrying the phosphorus source is stopped, and oxygen-existing limited-source diffusion is performed; 7) temperature is lowered, the nitrogen carrying the phosphorus source, the dry oxygen and the large nitrogen are introduced, and cooling diffusion is carried out; and 8) temperature is lowered, and the crystal silicon wafer is taken out from a boat. The phosphorus diffusion method is simple and is easy to do, and the phosphorus diffusion method is widely used; and photoelectric conversion efficiency of the silicon wafer can be effectively improved through adoption of the method, electric performance of a solar cell is improved, and the phosphorus diffusion method is suitable for promotion and application.

The invention discloses a method for manufacturing a soft silicon-based thin film solar cell integrated component. The method includes that a composite back reflection bottom electrode, a silicon-based thin film layer and a transparent electric conduction layer are manufactured by a vacuum method, a laser scribing process and a screen printing process are combined, and finally the soft silicon-based thin film solar cell integrated component is obtained. According to the method for manufacturing the soft silicon-based thin film solar cell integrated component, the laser scribing and the screen printing are performed after the vacuum plating process is finished, the pollution of the antivacuum process to the vacuum process is prevented, the substrate can be directly etched by the laser scribing, the difficulty is small, and the method is easy to implement, the grid line is manufactured by relatively simple screen printing process, and the interconnection is achieved. Besides, the manufacturing difficulty of the soft silicon-based thin film solar cell integrated component is greatly reduced, the cost is low, and the industrial production is easy to achieve.

The invention relates to a preparation method of a back membrane capable of improving conversion efficiency of a single-faced PERC cell. The method includes the steps of preparing an aluminum oxide membrane, preparing a silicon oxide membrane on the back face, preparing a silicon oxynitride membrane on the back face and preparing a double-layer silicon nitride membrane on the back face. A siliconwafer back membrane structure obtained by an existing production process generally is only provided with an aluminum oxide layer and a silicon nitride layer, while the method provided by the inventionadds the high-density silicon oxynitride membrane and silicon oxide membrane on the back membrane. The silicon oxynitride membrane with the high refraction index can well increase reflection of long-waveband sunlight by the back face of the cell, so long wave light enters a silicon wafer body again, absorption of the long wave light is increased, and therefore open-circuit voltage and current ofthe cell are increased so as to finally improve the conversion efficiency. Meanwhile, the silicon oxynitride membrane with the high refraction index and the silicon oxide membrane added on the back face can well prevent efficiency attenuation caused by moisture and metal ions entering a battery piece, and product quality is improved.

The invention discloses a single crystal alkali polishing additive, a polishing solution and a polishing method, and the additive comprises the following components in percentage by mass: 0.1%-10% of organic silicon, 0.1%-10% of a brightener, 0.05%-1% of a fluorocarbon surfactant and the balance of water. When the single crystal alkali polishing additive provided by the invention is applied to a single crystal polishing process, a single crystal with a bright back surface can be obtained, and meanwhile, the reflectivity is greatly increased; and the single crystal alkali polishing additive affects the polishing flatness and enhances the reaction speed.

The invention discloses an alkali polishing preparation method of a PERC solar cell. The method comprises texturing, diffusion, front laser processing, etching, annealing, back passivation film processing, front passivation film processing, back laser processing, silk-screen printing and sintering. The method is characterized in that, before the texturing step, an alkali polishing step and a silicon dioxide film deposition step are further included, wherein in the alkali polishing step, a potassium hydroxide solution is adopted to polish the silicon wafer, in the back surface silicon dioxide film deposition step, a layer of silicon dioxide mask is plated on the back surface of the silicon wafer by adopting a PECVD technology, and in the texturing step, a potassium hydroxide additive is added for texturing. According to the method, the flatness of the back surface of the prepared battery piece is improved, the passivation effect of the back film is improved, the open-circuit voltage isimproved, and the conversion efficiency of the battery is further improved.

The invention relates to the manufacture technology of solar batteries, in particular to a wash solution for removing laser damage layers The wash solution comprises water, ammonium fluoride, hydrofluoric acid and nitric acid, wherein the wash solution is prepared by adding 60-80g of ammonium fluoride, 10-20ml of hydrofluoric acid solution and 10-20ml of nitric acid solution into 1L water and mixing the constituents; the wash solution related by the invention can effectively remove the oxides and most of metal elements on the surfaces of silicon slices, can reduce PN (positive and negative) node leakage currents (also called as reverse saturation current or space charge region leakage currents), so that opening voltages are increased.

The invention belongs to the field of N-type solar cells, and discloses silver-aluminum paste for a front fine grid of a high-performance N-type solar cell and a preparation method of the silver-aluminum paste. The silver-aluminum paste for the front fine grid of the high-performance N-type solar cell comprises the following raw materials: conductive silver powder, an organic carrier, glass powder and aluminum powder, and the oxygen content of the aluminum powder is 0.5-1%. The preparation method comprises the following steps of: uniformly mixing and stirring the conductive silver powder, the glass powder, the aluminum powder and the organic carrier; and grinding an obtained mixture to obtain the silver-aluminum paste. According to the silver-aluminum paste for the front fine grid of the high-performance N-type solar cell, the aluminum powder with high oxygen content and proper particle size is added, so that the formation of excessive aluminum-silicon alloy can be inhibited, the open voltage is improved, and the photoelectric conversion efficiency of the solar cell is improved after the solar cell is prepared from the silver-aluminum paste.

The invention discloses an N-type monocrystalline silicon HBC solar cell preparation method, and the method comprises the steps: employing LPCVD equipment and Mark point positioning technology, employing a laser ablation technology to cooperate with an ink protection layer to prepare a P-type doped polycrystalline silicon layer and an N+type doped polycrystalline silicon layer which are arranged at intervals in an interdigital manner, and obtaining an HBC cell with better passivation, higher open-circuit voltage, higher efficiency and lower cost. By adopting the method, the preparation methodof the N-type monocrystalline silicon HBC solar cell is simplified, the N-type monocrystalline silicon HBC solar cell which is good in passivation effect, high in starting voltage and high in efficiency is obtained, and the simple-process, low-cost and high-efficiency large-scale production of the N-type monocrystalline silicon HBC solar cell is realized.

The invention aims to disclose a passivated contact N type back junction solar cell and a preparation method thereof. The passivated contact N type back junction solar cell comprises an N type crystalsilicon wafer, wherein an N + front surface field doped region, a front surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the front surface of the Ntype crystal silicon wafer from inside to outside, and a tunneling oxide layer, a P + doped polycrystalline silicon region, a back surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the back surface of the N type crystal silicon wafer from inside to outside. Compared with the prior art, the passivated contact N type back junction solar cell of the invention has the following characteristics that P + doped polycrystalline silicon is applied to the back surface of the N type cell and is used for passivating an emitter junction and a metal contactregion, carrier enters the doped P type polycrystalline silicon layer through the tunneling oxide layer to achieve selective transmission and collection, surface recombination, especially metal contact area recombination, of an emitter junction is greatly reduced by means of the excellent passivation performance of polycrystalline silicon, the open-circuit voltage and efficiency of the cell are improved, and the purpose of the invention is achieved.

The invention discloses a reaming process of polycrystalline black silicon. Firstly, metal-assisted wet-process chemical etching is adopted to prepare polycrystalline black silicon with nano holes from diamond cut polycrystalline silicon wafers; and then reaming treatment is carried out on the polycrystalline black silicon with the nano pores in two steps. According to the invention, the two-groove two-step reaming process is adopted, so that the reaming reaction is controllable, the corrosion depth and corrosion effect of pre-reaming and reaming can be controlled respectively, and thus the polycrystalline black silicon with good appearance, high CTM and honeycomb-structure holes is obtained.

The invention relates to a solar cell diffusion method comprising a gradual diffusion step. In the process of element doping, the concentration of doped elements on the surface of silicon gradually varies with time. The volume of doped metal diffused is adjusted to a gradient one, and high-temperature diffusion is carried out at low concentration in the early stage, which can make oxygen precipitation near the surface area fully dissolved (excessive oxygen precipitation is not conducive to impurity removal in an annealing step), and increase the open-circuit voltage of solar cell panels. As the process goes, high-temperature diffusion is carried out at high concentration in the late stage, which can quickly make up for P doping in the surface area and increase effective filling of doped metal. The diffusion method provided by the invention can reduce interstitial atoms formed by sputtering, dislocations, and defects in dead layers.