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Preparation method of back membrane capable of improving conversion efficiency of single-faced PERC cell

A technology of battery conversion efficiency and back film, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems of reduced silicon wafer thickness and reduced light absorption coefficient

Inactive Publication Date: 2020-07-07
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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AI Technical Summary

Problems solved by technology

[0004] The invention provides a method for preparing a back film that can improve the conversion efficiency of a single-sided PERC cell; it solves the problem in the prior art that the thickness of the silicon wafer is reduced and the light absorption coefficient is reduced

Method used

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  • Preparation method of back membrane capable of improving conversion efficiency of single-faced PERC cell
  • Preparation method of back membrane capable of improving conversion efficiency of single-faced PERC cell

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Embodiment 1

[0019] Example 1: The first step: prepare the back side alumina film 2, put the cell 1 into a graphite boat, and send it into the deposition furnace tube, and deposit the alumina film on the back side of the cell in the deposition furnace tube at a deposition temperature of 250°C —350℃, the thickness of the aluminum oxide film is 10nm;

[0020] The second step: prepare a silicon oxide film 3 on the back side, raise the temperature to 450°C after the first step, and introduce the reaction gas SiH 4 And N2O, where the gas flow rate is SiH 4 150sccm, N 2 O is 4500sccm, RF power is 9kw, duty ratio is 1:30, furnace tube pressure is 1000mtorr, silicon oxide film deposition time is 220s, silicon oxide thickness is 4nm, refractive index is 1.5;

[0021] The third step: prepare a silicon oxynitride film 4 on the back side, and pass the reaction gas SiH after the second step is completed 4 , NH 3 And N 2 O, where the gas flow rate is SiH 4 1000sccm, NH 3 2500sccm, N 2 O is 500sccm, RF power i...

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Abstract

The invention relates to a preparation method of a back membrane capable of improving conversion efficiency of a single-faced PERC cell. The method includes the steps of preparing an aluminum oxide membrane, preparing a silicon oxide membrane on the back face, preparing a silicon oxynitride membrane on the back face and preparing a double-layer silicon nitride membrane on the back face. A siliconwafer back membrane structure obtained by an existing production process generally is only provided with an aluminum oxide layer and a silicon nitride layer, while the method provided by the inventionadds the high-density silicon oxynitride membrane and silicon oxide membrane on the back membrane. The silicon oxynitride membrane with the high refraction index can well increase reflection of long-waveband sunlight by the back face of the cell, so long wave light enters a silicon wafer body again, absorption of the long wave light is increased, and therefore open-circuit voltage and current ofthe cell are increased so as to finally improve the conversion efficiency. Meanwhile, the silicon oxynitride membrane with the high refraction index and the silicon oxide membrane added on the back face can well prevent efficiency attenuation caused by moisture and metal ions entering a battery piece, and product quality is improved.

Description

Technical field [0001] The invention relates to a method for preparing a back film of a single-sided PERC battery, in particular to a method for preparing a back film that can improve the conversion efficiency of a single-sided PERC battery. Background technique [0002] At present, as environmental and energy issues have received more and more attention, solar cells, as a kind of clean energy, have entered a new stage in their research, development and utilization. In order to reduce the cost of crystalline silicon and adapt to the fiercely competitive photovoltaic industry, the thickness of crystalline silicon cells is getting thinner and thinner. Because crystalline silicon is a gap band material, the light absorption coefficient is small, and the loss caused by transmitted light will decrease with the thickness of the silicon wafer. However, as crystalline silicon is becoming thinner today, high-efficiency battery technology based on thinner crystalline silicon is the researc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/30C23C16/34C23C16/505C23C16/455H01L31/18H01L31/049H01L31/056
CPCC23C16/403C23C16/401C23C16/308C23C16/345C23C16/505C23C16/455H01L31/1804H01L31/049H01L31/056Y02E10/52Y02P70/50
Inventor 胡茂界丁晨陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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