N-type battery structure and preparation method thereof

An N-type battery technology, applied in the field of solar cells, can solve the problems of unfavorable film passivation, rough textured surface, surface passivation and surface metal contact, etc.

Pending Publication Date: 2021-07-06
CSI CELLS CO LTD +1
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, the surface of the suede is relatively rough, which is not conducive to the passivation of the film layer.
Therefore, it is difficult to balance surface passivation and surface metal contact, and the two are contradictory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type battery structure and preparation method thereof
  • N-type battery structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] This embodiment provides an N-type battery structure (for a schematic diagram, see figure 1 ), comprising: an N-type silicon body material 1, a pn junction layer 2, a passivation layer 3, an anti-reflection layer 4 and a front electrode 5 located in sequence on the front side of the N-type silicon body material 1,

[0065] And a quantum tunneling layer 6, a P-doped polysilicon layer 7, a protection layer 8 and a metal gate line electrode 9 located on the back of the N-type silicon body material 1 in sequence;

[0066] Wherein, the front electrode 5 is in contact with the passivation layer 3 , and the metal gate line electrode 9 is in contact with the P-doped polysilicon layer 7 . The back side of the N-type silicon material is a selective textured structure in which part of the textured surface is partially polished. The position where the metal grid electrode contacts the N-type silicon material is the textured surface, and the non-contact position is the polished surf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an N-type battery structure and a preparation method thereof. The structure comprises an N-type silicon body material and a metal grid line electrode formed on the surface of the N-type silicon body material, and is characterized in that the back surface of the N-type silicon body material is provided with a suede part and a polished surface part, and the contact position of the metal grid line electrode and the N-type silicon body material is located in the suede part. The back metal grid line electrode adopts a suede structure, so the contact area between the metal grid line and silicon is increased, and the contact resistance is improved; the flat surface of the polished area can improve the back passivation effect, reduce the surface recombination rate, enhance the internal reflection of long waves and improve the front current.

Description

technical field [0001] The invention relates to the technical field of solar cells, and relates to an N-type cell structure and a preparation method thereof. Background technique [0002] With the development of solar cell technology, cell efficiency is increasing day by day, mainly due to the development of surface passivation technology. Composite on the back surface of the battery. The development of PERC cells to TOPcon cells benefits from the passivation effect of the tunneling oxide layer and poly film structure on metal contacts, which greatly reduces the recombination under the back metal contacts. With the decreasing surface recombination rate, the lifetime of bulk materials has gradually become a key factor restricting the improvement of battery efficiency. Compared with the P-type doped silicon material, the N-type doped silicon material has a lower doping concentration and less impurity content under the same resistivity, so it has the advantage of long life. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0236H01L31/0224H01L31/18
CPCH01L31/022441H01L31/02363H01L31/0682H01L31/182Y02E10/546Y02P70/50
Inventor 李硕杨慧邓伟伟蒋方丹
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap