Phosphorus diffusion method of crystalline silicon solar cell

A solar cell and phosphorus diffusion technology, which is applied in the field of solar cells, can solve problems such as inconsistent PN junctions, large differences, and large temperature fluctuations, and achieve the effects of improved inter-chip uniformity, low cost, and reduced recombination centers

Active Publication Date: 2016-07-20
YANCHENG CANADIAN SOLAR INC
View PDF16 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the high-temperature treatment in the second step will cause large temperature fluctuations and large differences in each temperature zone in the furnace tube, resulting in inconsistent PN junctions
[0005] Therefore, the development of a phosphorus diffusion method for crystalline silicon solar cells can not only ensure the surface doping solubility, make a large number of impurities diffuse and conform to the shallow junction and narrow impurity distribution, but also play a role in segregation and gettering of impurities, ensuring The consistency of the PN junction is a goal that those skilled in the art have been longing to achieve but have not been able to achieve.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phosphorus diffusion method of crystalline silicon solar cell
  • Phosphorus diffusion method of crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A phosphorus diffusion method for a crystalline silicon solar cell, comprising the steps of:

[0036] (1) Raise the temperature of the diffusion furnace to 780°C, and the maximum nitrogen flow rate is 20,000 sccm; enter the boat, and the time of entering the boat is controlled at 600-800 seconds;

[0037] (2) The temperature is raised to 790° C., the maximum nitrogen flow is 20000 sccm, and the pressure in the furnace is controlled at 100 mba; the temperature adjustment time is controlled at 600 to 800 seconds;

[0038] (3) Keep the above temperature, pressure and large nitrogen flow rate constant, and at the same time introduce phosphorus-carrying source gas and dry oxygen to carry out low-temperature diffusion, and the diffusion time is 600 to 900 seconds;

[0039] The flow rate of the oxygen is 1500 sccm;

[0040] The flow rate of the phosphorus source gas is 1L / min;

[0041] (4) Stop feeding the phosphorus-carrying source gas and dry oxygen, raise the temperature ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a phosphorus diffusion method of a crystalline silicon solar cell. The phosphorus diffusion method comprises the following steps: (1) heating a diffusion furnace to 760-780 DEG C, and feeding; (2) adjusting the temperature to 780-790 DEG C; (3) introducing a phosphorus source carrying gas and dry oxygen for low-temperature diffusion; (4) stopping introducing the phosphorus source carrying gas and the dry oxygen, increasing the temperature inside the furnace to 820-840 DEG C, and boosting; (5) performing constant-temperature boosting; (6) reducing the temperature inside the diffusion furnace to 700-750 DEG C, and performing cooling diffusion; and (7) cooling, and discharging. As annealing steps and steps of two times of diffusion are combined, the problem that in the prior art the surface doping solubility caused by annealing is reduced secondarily and impurities are widely distributed can be solved, the impurity distribution meets the shallow junction and narrow impurity requirements, moreover the yield is increased, and the photoelectric conversion efficiency can be improved.

Description

technical field [0001] The invention relates to a phosphorus diffusion method for a crystalline silicon solar cell, which belongs to a diffusion junction process for manufacturing a solar cell and belongs to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, crystalline silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. Cells have excellent electrical and mechanical properties, therefore, crystalline silicon solar cells occupy an important position in the field of photovoltaics. [0003] The manufacturing process of crystalline silicon solar cells widely used at present has also been standardized. The main steps are...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/08C30B31/18H01L21/223
CPCC30B31/08C30B31/18H01L21/223
Inventor 杨健党继东
Owner YANCHENG CANADIAN SOLAR INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products