High efficient solar cell preparation method

Abstract

The invention relates to a high efficient solar cell preparation method. A step of oxidation manufacture procedure is added after the manufacture procedure of removing phosphosilicate glass (PSG) based on manufacturing process of a conventional solar cell, the method is matched with adjusting diffusion manufacture procedure craft, and therefore a layer of silica gettering passivation layer is formed on the surface of a silicon wafer, secondary distribution is carried out on cell N-type layer impurities, compounding of the surface of a cell and an N-type layer is reduced, the cell is enabled to produce high load open-circuit voltage (Uoc ) and a load short-circuit current (Isc), and conversion efficiency of the cell is improved. A high efficient solar cell can be obtained on the basis of improving the conventional solar cell, volume production can be fast achieved, compared with a conventional production line cell, and the manufactured cell has high conversion efficiency and has great market value.

Description

technical field [0001] The invention belongs to the field of solar cell production, and in particular relates to a method for preparing a high-efficiency solar cell. Background technique [0002] The manufacturing process of crystalline silicon solar cells generally has the following steps: chemical cleaning and surface texture treatment, diffusion junction, edge etching and phosphorus silicon glass removal, anti-reflection film deposition, electrode printing, and sintering. The diffusion junction of crystalline silicon solar cells is generally realized by two-step diffusion of active deposition and passive advancement. Active deposition controls the total amount of doping, and passive advancement controls the surface concentration and junction depth; Anti-reflection and passivation. [0003] In the diffusion junction process, there is a layer of phosphosilicate glass on the surface of the silicon wafer, resulting in a high concentration of the emitter surface after diffusi...

AI Technical Summary

Problems solved by technology

[0003] In the diffusion junction process, there is a layer of phosphosilicate glass on the surface of the silicon wafer, resulting in a high concentration of the emitter surface after diffusion, and serious surface recombination; the silicon nitride film has poor gettering passivation effect

The above two factors lead to lower Uoc and Isc of crystalline silicon cells, resulting in lower conversion efficiency of crystalline silicon cells