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High efficient solar cell preparation method

A solar cell, high-efficiency technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problem of low Uoc and Isc of crystalline silicon cells, poor gettering passivation effect of silicon nitride film, low conversion efficiency of crystalline silicon cells, etc. problem, achieve high Uoc and Isc, reduce compounding, and improve conversion efficiency

Active Publication Date: 2013-05-08
山东力诺阳光电力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the diffusion junction process, there is a layer of phosphosilicate glass on the surface of the silicon wafer, resulting in a high concentration of the emitter surface after diffusion, and serious surface recombination; the silicon nitride film has poor gettering passivation effect
The above two factors lead to lower Uoc and Isc of crystalline silicon cells, resulting in lower conversion efficiency of crystalline silicon cells

Method used

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Examples

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Effect test

Embodiment 1

[0017] A method for preparing a high-efficiency solar cell of the present invention includes chemical cleaning and surface texture treatment, diffusion junction, edge etching and phosphorus silicon glass removal, oxidation, deposition of anti-reflection film, printing electrodes, and sintering steps. On the basis of the silicon solar cell preparation process, adjust the diffusion process to obtain an N-type layer with a higher surface concentration and a lower junction depth, and then undergo an etching and phosphorus washing process to clean the phosphosilicate glass on the surface of the silicon wafer, and then add a step The oxidation process forms a layer of silicon dioxide gettering passivation layer on the surface of the silicon wafer, and makes the impurities in the N-type layer redistributed without increasing the total amount of impurities in the N-type layer, reducing the doping concentration on the surface, and then The process adopts the conventional crystalline sil...

Embodiment 2

[0026] A method for preparing a high-efficiency solar cell of the present invention includes chemical cleaning and surface texture treatment, diffusion junction, edge etching and phosphorus silicon glass removal, oxidation, deposition of anti-reflection film, printing electrodes, and sintering steps. On the basis of the silicon solar cell preparation process, adjust the diffusion process to obtain an N-type layer with a higher surface concentration and a lower junction depth, and then undergo an etching and phosphorus washing process to clean the phosphosilicate glass on the surface of the silicon wafer, and then add a step The oxidation process forms a layer of silicon dioxide gettering passivation layer on the surface of the silicon wafer, and makes the impurities in the N-type layer redistributed without increasing the total amount of impurities in the N-type layer, reducing the doping concentration on the surface, and then The process adopts the conventional crystalline sil...

Embodiment 3

[0035] A method for preparing a high-efficiency solar cell of the present invention includes chemical cleaning and surface texture treatment, diffusion junction, edge etching and phosphorus silicon glass removal, oxidation, deposition of anti-reflection film, printing electrodes, and sintering steps. On the basis of the silicon solar cell preparation process, adjust the diffusion process to obtain an N-type layer with a higher surface concentration and a lower junction depth, and then undergo an etching and phosphorus washing process to clean the phosphosilicate glass on the surface of the silicon wafer, and then add a step The oxidation process forms a layer of silicon dioxide gettering passivation layer on the surface of the silicon wafer, and makes the impurities in the N-type layer redistributed without increasing the total amount of impurities in the N-type layer, reducing the doping concentration on the surface, and then The process adopts the conventional crystalline sil...

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PUM

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Abstract

The invention relates to a high efficient solar cell preparation method. A step of oxidation manufacture procedure is added after the manufacture procedure of removing phosphosilicate glass (PSG) based on manufacturing process of a conventional solar cell, the method is matched with adjusting diffusion manufacture procedure craft, and therefore a layer of silica gettering passivation layer is formed on the surface of a silicon wafer, secondary distribution is carried out on cell N-type layer impurities, compounding of the surface of a cell and an N-type layer is reduced, the cell is enabled to produce high load open-circuit voltage (Uoc ) and a load short-circuit current (Isc), and conversion efficiency of the cell is improved. A high efficient solar cell can be obtained on the basis of improving the conventional solar cell, volume production can be fast achieved, compared with a conventional production line cell, and the manufactured cell has high conversion efficiency and has great market value.

Description

technical field [0001] The invention belongs to the field of solar cell production, and in particular relates to a method for preparing a high-efficiency solar cell. Background technique [0002] The manufacturing process of crystalline silicon solar cells generally has the following steps: chemical cleaning and surface texture treatment, diffusion junction, edge etching and phosphorus silicon glass removal, anti-reflection film deposition, electrode printing, and sintering. The diffusion junction of crystalline silicon solar cells is generally realized by two-step diffusion of active deposition and passive advancement. Active deposition controls the total amount of doping, and passive advancement controls the surface concentration and junction depth; Anti-reflection and passivation. [0003] In the diffusion junction process, there is a layer of phosphosilicate glass on the surface of the silicon wafer, resulting in a high concentration of the emitter surface after diffusi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李源伟仲伟佳高成明李秉霖
Owner 山东力诺阳光电力科技有限公司
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