Cleaning technology after polycrystalline silicon solar cell silicon wafer acid texturing
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHANGZHOU SHICHUANG ENERGY CO LTD
- Publication Date
- 2013-11-20
Abstract
Description
technical field
[0001] The invention relates to a cleaning process for silicon wafers of solar cells, in particular to a cleaning process for silicon wafers of polycrystalline silicon solar cells after acid texturing. Background technique
[0002] In the manufacturing process of polycrystalline silicon solar cells, texturing the surface of silicon wafers is a key link. The effect of texturing directly affects the conversion efficiency of the final cell. Using the isotropic etching of polysilicon in hydrofluoric acid and nitric acid to texture the surface of silicon wafers is a very important way to improve efficiency. However, after the silicon wafer is textured, a lot of texturizing fluid will remain on the surface, and it must be cleaned with alkali to neutralize the acid remaining on the surface after texturing. In addition, after using acidic texturing liquid to texturize polycrystalline silicon wafers, a layer of porous silicon will be formed on the surface of the tex...