Reaming process of polycrystalline black silicon

A polycrystalline silicon wafer and black silicon technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems affecting the popularization and popularization of black silicon technology, the low pulling force of the front silver gate line, and the unsatisfactory effect. Good appearance, low reflectivity, the effect of retaining appearance advantage and current advantage

Active Publication Date: 2018-03-16
CHANGZHOU SHICHUANG ENERGY CO LTD
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Problems solved by technology

Therefore, only through the above-mentioned pore-enlarging acid solution for pore-enlarging treatment, the effect is not satisfactory.
At the same time, in the existing black silicon texturing process, the hole size after expansion is only 200-500nm. After the silic

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  • Reaming process of polycrystalline black silicon

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[0027] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0028] The technical scheme of concrete implementation of the present invention is:

[0029] A hole-enlarging process for polycrystalline black silicon. First, metal-assisted wet chemical etching is used to prepare diamond wire-cut polycrystalline silicon wafers into polycrystalline black silicon with nano-holes; Black silicon carries out hole expansion process; Described hole expansion process comprises the steps:

[0030] 1) Put the above-mentioned polycrystalline black silicon with nano-holes into the first reaming tank for pre-expanding. The reaming liquid used for pre-expanding consists of 8% to 18% Nitric acid, 0.2% ~ 0.6% hole expansion auxiliary a...

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Abstract

The invention discloses a reaming process of polycrystalline black silicon. Firstly, metal-assisted wet-process chemical etching is adopted to prepare polycrystalline black silicon with nano holes from diamond cut polycrystalline silicon wafers; and then reaming treatment is carried out on the polycrystalline black silicon with the nano pores in two steps. According to the invention, the two-groove two-step reaming process is adopted, so that the reaming reaction is controllable, the corrosion depth and corrosion effect of pre-reaming and reaming can be controlled respectively, and thus the polycrystalline black silicon with good appearance, high CTM and honeycomb-structure holes is obtained.

Description

technical field [0001] The invention relates to a hole-enlarging process of polycrystalline black silicon. Background technique [0002] At present, in the process flow of polycrystalline black silicon texturing, the method of metal-assisted wet chemical etching is more and more widely used. Using metal-assisted wet chemical etching can prepare nano-holes on the surface of silicon wafers. Polycrystalline black silicon suede structure. [0003] Metal-assisted wet chemical etching generally uses metal ions. Since the metal particles are relatively small, only a few nanometers to tens of nanometers, the corresponding nanopores formed on polycrystalline black silicon have a pore size of only a few nanometers to tens of nanometers. In order to increase the coverage of the textured surface, reduce the recombination of the silicon wafer surface, and improve the electrical performance of the cell, it is necessary to expand the polycrystalline black silicon obtained by metal-assiste...

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Application Information

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IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 章圆圆常振宇陈其成
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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