Single crystal alkali polishing additive, polishing solution and polishing method

A single crystal alkali and additive technology, applied in the field of solar cells, can solve the problems of high liquid medicine cost and tail liquid treatment cost, poor control of the reaction process, high reflectivity of silicon wafers, etc., and achieve pollution-free and controllable polishing effect Good effect with broad application prospects

Inactive Publication Date: 2021-08-31
南京卓胜自动化设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the following three methods are mainly used in the polishing production of industrial crystalline silicon solar cells: 1. Tetramethylammonium hydroxide polishing. The silicon wafers prepared by this method have high reflectivity, but the cost of the chemical solution and the tail liquid The processing cost is high, and the pollution to the environment is relatively serious
2. Polishing with nitric acid and hydrofluoric acid. This method has low liquid cost, poor polishing effect, and serious environmental pollution.
3. Inorganic alkali polishing, using high-concentration potassium hydroxide and sodium hydroxide for polishing, this method has low liquid cost, good polishing effect, and less impact on the environment, but its process is unstable and the reaction process is not easy to control At the same time, the alkali will corrode the silicon oxide on the front side of the silicon wafer, thereby destroying the front pn junction and causing the battery to fail

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  • Single crystal alkali polishing additive, polishing solution and polishing method
  • Single crystal alkali polishing additive, polishing solution and polishing method
  • Single crystal alkali polishing additive, polishing solution and polishing method

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Embodiment 1

[0031] Apply the polishing process of single crystal alkali polishing additive of the present invention, take following process steps:

[0032] (1) Preparation of single-crystal alkali polishing additive: using ultrapure water as a solvent, 0.1 g of organic silicon, 0.1 g of brightener, and 0.05 g of fluorocarbon surfactant are dissolved in ultrapure water to obtain 100 g of texturing additive;

[0033] (2) configuration polishing liquid: the potassium hydroxide of 250g is dissolved in ultrapure water, obtains 10kg potassium hydroxide solution; Then in this potassium hydroxide solution, add the 100g single crystal alkali polishing additive that step 1) makes and obtain polishing liquid;

[0034] (3) Polishing process: immerse the monocrystalline silicon cells in the polishing solution for surface polishing, the texturing temperature is 75°C, and the texturing time is 180s.

Embodiment 2

[0036] Apply the polishing process of single crystal alkali polishing additive of the present invention, take following process steps:

[0037] (1) Preparation of single crystal alkali polishing additive: with ultrapure water as a solvent, 2g of organic silicon, 2g of brightener, and 0.32g of fluorocarbon surfactant are dissolved in ultrapure water to obtain 400g of texturing additive;

[0038] (2) Configure the velvet making solution: dissolve the aqueous potassium hydroxide solution of 300g in ultrapure water to obtain a 10kg potassium hydroxide solution; then add the 400g single crystal alkali polishing additive made by step 1) in the potassium hydroxide solution get polishing solution;

[0039] (3) Polishing: immerse the monocrystalline silicon cells in the polishing solution for surface polishing, the texturing temperature is 65° C., and the texturing time is 240 s.

Embodiment 3

[0041] Apply the polishing process of single crystal alkali polishing additive of the present invention, take following process steps:

[0042] (1) Organic silicon, brightener, fluorocarbon surfactant are added into water, mix uniformly and be made into single crystal alkali polishing additive; In terms of mass percentage, additive contains organic silicon 2%, brightener 2.5%, fluorocarbon surfactant 0.1% and the balance of water.

[0043] (2) adding the prepared single crystal alkali polishing additive to the potassium hydroxide aqueous solution with a mass fraction of 4%, and mixing uniformly to make a polishing liquid; wherein, the mass ratio of the single crystal alkali polishing additive to the potassium hydroxide aqueous solution is 1 : 50.

[0044](3) Polishing: immerse the monocrystalline silicon cells in the polishing solution for surface polishing, the texturing temperature is 80°C, and the texturing time is 360s.

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PUM

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Abstract

The invention discloses a single crystal alkali polishing additive, a polishing solution and a polishing method, and the additive comprises the following components in percentage by mass: 0.1%-10% of organic silicon, 0.1%-10% of a brightener, 0.05%-1% of a fluorocarbon surfactant and the balance of water. When the single crystal alkali polishing additive provided by the invention is applied to a single crystal polishing process, a single crystal with a bright back surface can be obtained, and meanwhile, the reflectivity is greatly increased; and the single crystal alkali polishing additive affects the polishing flatness and enhances the reaction speed.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a wafer additive, a polishing liquid and a polishing method. Background technique [0002] Single crystal alkali polishing additive refers to the chemical additives added during the texturing process of monocrystalline silicon solar cells that are beneficial to the reaction results and product performance. In the production process of crystalline silicon solar cells, in order to further improve the performance and efficiency of the cells, the back of the silicon wafer is usually polished to make the back surface of the silicon wafer smoother or even achieve a mirror effect. After back polishing, the back of the silicon wafer is flat, On the one hand, it can enhance the reflection of transmitted light and reduce the light transmittance; on the other hand, it can make the aluminum paste contact with the surface of the silicon wafer more fully to improve the passivation effect. The curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18B24B1/00
CPCB24B1/00C09G1/18
Inventor 蒋旭东朱进蒋良平
Owner 南京卓胜自动化设备有限公司
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