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43results about How to "Energy level matching" patented technology

Source-drain electrode of thin film transistor and manufacturing method thereof and thin film transistor and manufacturing method thereof

The invention discloses a source-drain electrode of a thin film transistor. The source-drain electrode is composed of a molybdenum layer and a copper layer in a sequential overlaying mode, and the copper layer is arranged on the molybdenum layer. The molybdenum layer is arranged on an active layer of the thin film transistor; the growth direction of crystal lattices of the molybdenum layer and the growth direction of crystal lattices of the copper layer are perpendicular to each other; the thickness of the molybdenum layer is 20 nm-40 nm; the thickness of the copper layer is 150 nm-250 nm. The invention further discloses a manufacturing method of the source-drain electrode, the thin film transistor comprising the source-drain electrode and a manufacturing method of the thin film transistor. The defects that in the prior art, copper electrodes are prone to being oxidized, and copper atoms diffuse toward oxide after the copper electrodes deposit on the active layer of the metal oxide are overcome, the source-drain electrode has the advantage of high conductivity, stress balance between two layers of electrodes can be achieved, the disbanding ratio of the electrodes is lowered, and the bonding strength is improved.
Owner:SOUTH CHINA UNIV OF TECH

Preparation method for solar cell with integrated diode

The invention relates to the field of a solar cell, and mainly discloses a preparation method for a solar cell with an integrated diode. The preparation method for the solar cell with the integrated diode mainly comprises the following steps of epitaxial growth on a P-type Ge substrate, first photoetching, second photoetching, preparation of an edge protection layer and evaporation of an electrode layer. The preparation method has the advantages that operation is convenient and the quality of a grown sub battery is favorable through a mode of preparing the sub battery by epitaxial growth; two regions of a bypass diode and an isolation groove can be accurately formed by the first photoetching and the second photoetching; the electric leakage of a positive-negative (PN) junction in the bypass diode is avoided by preparing the edge protection layer, and the quality of the PN junction is optimized; and finally, the more uniform electrode layer is prepared by a method of thermal evaporation, the internal resistance is reduced, and the energy loss is reduced. In summary, the preparation method is simple to operate, and moreover, the solar cell provided with the integrated diode of which the positive voltage is reduced and the starting voltage is small can be prepared according to the method.
Owner:CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1

Triphenylamine polymers containing oligomeric ether side chains and application of triphenylamine polymers in preparation of organic photoelectric device by solution method

The invention discloses triphenylamine polymers containing oligomeric ether side chains and application of the triphenylamine polymers in preparation of an organic photoelectric device by a solution method. The polymers are simple in structure and easy to synthesize; by taking a planar triphenylamine unit obtained by a bridging reaction of triphenylamine as a main chain, the hole mobility is favorably improved, and the polymers are enabled to have higher hole transmission capacity, and are good hole injection / transmission / generation materials; the HOMO / LUMO energy level of the polymers is adjustable; the triphenylamine and different Ar units are polymerized to obtain polymer materials with different energy levels; in addition, by means of the oligomeric ether side chains, the polymers have good solubility in a medium polar solvent of oxygen-containing cycloalkane, and poor solubility in a strong solar solvent, so that the polymers have more solvent orthogonal selections in a multilayer solution processing device. The triphenylamine polymers containing the oligomeric ether side chains, disclosed by the invention, are applied to preparation of the organic photoelectric device by the solution method.
Owner:SOUTH CHINA UNIV OF TECH

Composite electrode and preparation method thereof, and heterojunction solar cell and preparation method thereof

The present invention relates to the composite electrode structure of a heterojunction solar cell comprising a transparent conductive layer, an electrode arranged on the transparent conductive layer and an interface buffer layer configured to reduce the interface resistance between the transparent conductive layer and a doped noncrystalline silicon layer; when the electrode is a positive pole, the work function of the interface buffer layer is larger than or equal to 5V; and when the electrode is a negative pole, the work function of the interface buffer layer is smaller than or equal to 4.2eV. In the composite electrode structure of the heterojunction solar cell, the interface buffer layer is inserted between the doped noncrystalline silicon layer and the transparent conductive layer to reduce the interface resistance between the doped noncrystalline silicon layer and the transparent conductive layer so as to improve the filling factors of the battery, match the energy grade of the battery, and finally improve the photoelectric conversion efficiency of the heterojunction solar cell. The present invention further provides a preparation method of the composite electrode structure of the heterojunction solar cell and the heterojunction solar cell and the preparation method thereof.
Owner:GCL SYST INTEGRATION TECH +1

Perovskite solar cell without electron transport layer and hole transport layer and manufacturing method

The invention discloses a perovskite solar cell without an electron transport layer and a hole transport layer and a manufacturing method. The perovskite solar cell comprises an FTO substrate, an FTOelectrode, a PEIE modification layer and a perovskite photoactive layer which are sequentially distributed from bottom to top, wherein an anode is arranged above the perovskite photoactive layer, anda cathode is arranged above the FTO substrate. In the structure, the use of an organic-inorganic hybrid lead halide perovskite material, an organic hole transport layer material and an expensive metalelectrode is avoided, and meanwhile, an electron transport layer is abandoned; the PEIE material is deposited on the FTO electrode; according to the method, a monomolecular layer can be introduced tothe surface, and an interface dipole is formed between the FTO electrode and the perovskite photoactive layer, so that the work function of the surface of the FTO electrode is reduced, and the energylevels of the FTO electrode and the CsPbIBr2 photoactive layer are more matched. Recombination between photon-generated carriers is greatly inhibited. And meanwhile, the open-circuit voltage and thefilling coefficient of the device are obviously improved.
Owner:XIDIAN UNIV

A-D-A type indacenodithiophene nuclear terminal methyl micromolecule and preparation method thereof

The invention discloses a small molecule of A-D-A type indacenodithiophene nuclear terminal methyl, and a preparation method thereof. The preparation method comprises the following steps: reacting 6-methyl-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile with indacenodithiophene under the protection of inert gas, and purifying by adopting column chromatography to obtain a target product. According to the invention, the skeleton plane rigidity of the indacenodithiophene core adopted by the invention is beneficial to increase of effective conjugate length and promotion of intramolecular carrier migration, and the large-volume non-coplanar side chains distributed on the two sides of the skeleton can inhibit long-range ordered accumulation, provide a quasi-three-dimensional charge transfer channel and form a receptor-donor-receptor (A-D-A) conjugated structure with an electron withdrawing group, so that spectral absorption of the material can be broadened and enhanced, and the material is applied to construction of efficient organic solar cell materials; and the conjugated small molecule provided by the invention has a narrow band gap, has good absorption in an ultraviolet and visible light range, is used as an acceptor material in an organic solar cell, and achieves good device efficiency.
Owner:NANCHANG HANGKONG UNIVERSITY

A nanometer bimetallic layer back contact for undoped heterogeneous n-type single polished silicon solar cell and preparation method and application thereof are disclosed

The invention discloses a nanometer bimetallic layer back contact for undoped heterogeneous n-type single parabolic silicon solar cell and a preparation method and application thereof. The back contact is a nanometer ultra-thin metal adhesion layer and an electron selective transmission nanometer metal layer which are sequentially plated on the back surface of the n-type single-thrown silicon; Thenanometer ultra-thin metal adhesion layer is aluminum, silver or gold, and the thickness thereof is 0.5 to 1 nm; The electron selective transmission nanometer metal layer is magnesium, and the thickness thereof is 5-20 nm. The nano bimetallic layer provided by the invention selectively transmits electrons in the back contact of the nano bimetallic layer and the contact and adhesion between the nano metallic layer and the silicon are better, the work function of the metal electrode can be reduced, the transmission of electrons from the silicon to the electrode is more favorable, and the energyconversion efficiency of the undoped heterogeneous n-type single parabolic silicon solar cell is further improved. Moreover, the preparation process of the nano bimetallic layer back contact is simple, no annealing process is required, the cost is low, the preparation process and the product performance are taken into consideration, and the nano bimetallic layer back contact is suitable for large-scale industrial production.
Owner:JINAN UNIVERSITY

Dicarbazolyl derivative, preparation method and application of dicarbazolyl derivative, and electroluminescent device

The invention discloses a dicarbazolyl derivative, a preparation method and application of the dicarbazolyl derivative, and an electroluminescent device. The general structural formula of the dicarbazolyl derivative is represented as drawing shown in the specification, wherein R is an electron withdrawing group. The adopted compound takes a dicarbazolyl group as a central structure and is bonded with various electron withdrawing groups on 3-position of any carbazolyl, so as to effectively regulate a conjugated system of a host material and regulate triplet energy levels of the host material, so that HOMO and LUMO energy levels of the host material can be better matched with energy level of a blue-light object material. In addition, electron hole transmission performance of the compound is regulated through the electron withdrawing group, so that hole and electron transmission capacity of the host material is to be balanced, and the luminous efficiency of the device is improved; the dicarbazolyl derivative is relatively low in efficiency rolling-off under a high-brightness condition, so that the dicarbazolyl derivative can be widely applied to the field of organic electroluminescence.
Owner:TCL CORPORATION

Organic photoelectric device based on metal-induced organic interface layer and preparation method

The invention discloses an organic photoelectric device based on a metal-induced organic interface layer and a preparation method. According to the metal induced organic interface layer, a metal thin layer is pre-evaporated on the surface of a conductive electrode to serve as an induction layer, an organic material (such as PFN-Br) containing amino groups or other polar groups is spin-coated at room temperature, an induced dipole is generated through interaction between metal and the organic material, and a multifunctional composite interface is prepared. The method is applied to preparation of organic photoelectric devices such as organic solar cells and organic photoelectric detectors by a solution method. As a typical example, Ag / PFN-Br is adopted as a cathode interface modification layer to be applied to the organic photoelectric device, and strong chemical adsorption arrangement is formed on the surface of an electrode by the PFN-Br through the induction effect of Ag, so that a strong interface dipole is formed to regulate and control the surface potential of the electrode, the charge transfer barrier between an active layer and the electrode is reduced, and the performance of the organic photoelectric device is improved. And finally, high-efficiency and stable preparation of the organic photoelectric device is realized.
Owner:SOUTH CHINA UNIV OF TECH

Solution processing series quantum dot light emitting diode based on doped connection layer and manufacturing method of light emitting diode

The invention belongs to the technical field of quantum dot light-emitting diodes, and particularly relates to a solution processing series quantum dot light-emitting diode based on a doped connectionlayer and a manufacturing method of the solution processing series quantum dot light-emitting diode. The light emitting diode comprises a bottom device and a top end device; the bottom device comprises a cathode, a first electron injection layer, a first quantum dot light-emitting layer, a first hole transport layer and a first hole injection layer which are sequentially stacked from bottom to top. The top end device comprises a second electron injection layer, a second quantum dot light-emitting layer, a second hole transport layer, a second hole injection layer and an anode which are sequentially stacked from bottom to top, the first hole injection layer of the bottom device and the second electron injection layer of the top end device are stacked, the first hole injection layer is madeof a PEDOT: PSS-GO solution. and the second electron injection layer is made of a solution containing ZnMgO. The invention provides an effective method for improving the performance of a solution processing quantum dot light emitting diode.
Owner:SOUTHWEST UNIV

Organic compound and application thereof

The invention provides an organic compound and application thereof, the organic compound has a structure as shown in a formula I. Through the design of a molecular structure, the stacking density of molecules is improved, so that the organic compound has excellent hole transport performance, the HOMO energy level of the compound is regulated and improved, and the organic compound is better matched with an anode material; the hole injection and transmission capability of the compound is improved, the acquisition of low voltage is facilitated, and the carrier transmission stability of the compound in an electric field environment is obviously improved. Due to the special tetrahedral structure of the organic compound, the organic compound can be used for preparing a good amorphous film, so that the organic compound has good film-forming property when being used as an organic electroluminescent device material. The organic compound is applied to the organic electroluminescent device, is especially suitable for being used as a hole transport layer material and / or an electron barrier layer material, and can effectively improve the luminous efficiency and stability of the device, prolong the service life of the device, reduce the voltage and achieve a better luminous effect.
Owner:BEIJING ETERNAL MATERIAL TECH

Triphenylamine polymers containing oligoether side chains and their application in solution-based preparation of organic optoelectronic devices

The invention discloses a triphenylamine polymer containing an oligoether side chain and its application in the preparation of an organic photoelectric device by a solution method. The polymer of the present invention has simple structure and is easy to synthesize. The planar triphenylamine unit obtained by triphenylamine through bridging reaction is the main chain, which is conducive to improving the hole mobility and making the polymer have higher hole transport ability, which is very good. Hole injection / transport / generation materials; the HOMO / LUMO energy level of the polymer can be adjusted, triphenylamine can be polymerized with different Ar units to obtain polymer materials with different energy levels, and the oligomeric ether side chain of the polymer makes the polymerization The polymer has good solubility in medium polar solvents containing oxygen cycloalkane, but poor solubility in strong polar solvents, so that polymers have more solvent orthogonal choices in multilayer solution processing devices. The triphenylamine polymer containing oligoether side chains of the invention is applied to the preparation of organic photoelectric devices by a solution method.
Owner:SOUTH CHINA UNIV OF TECH

OLED screen used as light source for fingerprint identification device and optical fingerprint identification device

The invention provides an OLED screen used as a light source for a fingerprint identification device and an optical fingerprint identification device, the optical fingerprint identification device includes an OLED screen and an optical sensor, and the optical sensor is arranged on a light-emitting surface far away from the OLED screen On one side of the OLED screen, an opaque first electrode layer, an organic light-emitting unit, and a transparent or semi-transparent second electrode layer are arranged on the transparent substrate of the OLED screen, and a number of micropores are arranged on the opaque first electrode layer, so that The microholes are filled with a transparent insulating layer and / or covered by a transparent insulating layer; when a finger touches and presses the light-emitting surface of the OLED screen body, after the light emitted by the light-emitting area is reflected by the finger, part of the light passes through the After the microhole reaches the optical sensor to form a fingerprint identification signal. The OLED transparent screen of the present invention uses the electrode layer with a microporous structure directly as the opaque microporous layer, which saves the process, and at the same time, the present invention can effectively reduce the interference of the light emitted by the OLED screen itself on the detector , making the image clearer.
Owner:GUAN YEOLIGHT TECH CO LTD

A source-drain electrode of a thin film transistor and its preparation method, a thin film transistor and its preparation method

The invention discloses a source-drain electrode of a thin film transistor. The source-drain electrode is composed of a molybdenum layer and a copper layer in a sequential overlaying mode, and the copper layer is arranged on the molybdenum layer. The molybdenum layer is arranged on an active layer of the thin film transistor; the growth direction of crystal lattices of the molybdenum layer and the growth direction of crystal lattices of the copper layer are perpendicular to each other; the thickness of the molybdenum layer is 20 nm-40 nm; the thickness of the copper layer is 150 nm-250 nm. The invention further discloses a manufacturing method of the source-drain electrode, the thin film transistor comprising the source-drain electrode and a manufacturing method of the thin film transistor. The defects that in the prior art, copper electrodes are prone to being oxidized, and copper atoms diffuse toward oxide after the copper electrodes deposit on the active layer of the metal oxide are overcome, the source-drain electrode has the advantage of high conductivity, stress balance between two layers of electrodes can be achieved, the disbanding ratio of the electrodes is lowered, and the bonding strength is improved.
Owner:SOUTH CHINA UNIV OF TECH
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