The invention discloses a method for growing
rhenium disulfide nanometer sheets on a
silicon substrate of a non-oxidation layer. The method comprises the following steps that S1, the
silicon substrateis cleaned and is subjected to pretreatment; S2, in a multi-temperature-zone tubular furnace, one aluminum
oxide boat is arranged in each of two adjacent temperature regions, wherein the distance between the two aluminum
oxide boats is 20 to 30cm; a
sulfur source is arranged in the center position of the aluminum
oxide boat in the upper
stream temperature region; a
rhenium source is arranged in the lower
stream edge of the aluminum oxide boat of the lower
stream temperature region; a growth surface of the
silicon substrate faces the downward position; the distance from the silicon substrate to the lower stream edge of the aluminum oxide boat of the lower
stream temperature region is 0 to 1cm; S3, then,
inert gas is introduced into a dual-temperature-region tubular furnace, heating is performed for reaction; the
rhenium disulfide nanometer sheets can grow on the silicon substrate of the non-oxidation layer. The sublimed
sulfur is used as a
sulfur source;
rhenium trioxide is used as a rhenium source; a chemical
gas phase precipitation method is used; by regulating the distance between the sulfur source and the rhenium source and the position of the rhenium source in the lower streamtemperature region and the position of the silicon substrate, the rhenium disulfide nanometer sheets on the silicon substrate can directly grow on the silicon substrate of the non-oxidation layer.