14 results about "Rhenium sulfide" patented technology

The application discloses a preparation method of a two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure. The method is chemical vapor deposition, and Si / SiO2 is used as a substrate, a metal rhenium foil (Re) is used as a rhenium source, and a metal molybdenum foil (Mo) is used as a molybdenum source. The metal rhenium foil is laid on one end surface of the metal molybdenum foil, the substrate is inverted on the metal molybdenum foil, and the substrate is reacted with sulfur vapor to prepare a two-dimensional ReS2 / MoS2 vertical heterostructure with a multilayer ReS2 as a bottom layer and a double-layer MoS2 as a top layer. The obtained two-dimensional ReS2 / MoS2 vertical heterojunction material is a crystal stacked by two crystals with different sizes, presents obvious luminescent properties, can be used as a channel material of a transistor and applied to the field of ultrathin electronic devices, and has potential application in the field of high-efficiency light detectors.

The invention relates to a composite gas-sensitive material, a gas sensor and a preparation method and application of the composite gas-sensitive material. The composite gas sensitive material comprises gold modified rhenium disulfide, and the molar ratio of gold to rhenium disulfide is (0.01-0.15): 1. Wherein the gold has excellent catalytic performance and can reduce the activation energy of the reaction and promote the proceeding of the surface chemical reaction. When the gold is combined with rhenium disulfide, the gold can be used as a catalyst to accelerate the adsorption and reaction process of gas molecules on the surface of the material. Meanwhile, gold and rhenium disulfide form a Schottky barrier, and carrier transmission in the rhenium disulfide material can be adjusted due to the existence of the barrier, so that the electrical property of the material is influenced. When gas molecules are adsorbed, the change of the Schottky barrier can cause the rapid change of parameters such as resistance or capacitance of the material, so that rapid response is realized, and the material has important significance in improving the sensing performance of the material.

The invention discloses a low-pressure two-step preparation method of a rhenium disulfide film, and belongs to the technical field of semiconductor material preparation. In the first step, rhenium powder is partially oxidized to form rhenium / rhenium heptoxide mixed powder. Secondly, rhenium / rhenium heptoxide is used as a rhenium source for rhenium disulfide growth, firstly, the active rhenium heptoxide with the high melting point and the low melting point can be dissolved to react with sulfur powder to generate rhenium disulfide molecules, and then the rhenium disulfide molecules are deposited on the mica substrate under the leading of argon to serve as nucleation points; then, high-melting-point rhenium powder begins to be dissolved under the assistance of dissolved rhenium heptoxide and is guided by argon to reach the mica substrate to continue growth of rhenium disulfide; and finally, obtaining the high-quality rhenium disulfide film on the mica substrate. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

The invention discloses a nano-composite photocatalytic material and a preparation method and application thereof.The preparation method comprises the steps that porous carbon nitride is added into deionized water and stirred, then a silver nitrate solution is added and stirred continuously, then a potassium bromide solution is dropwise added and stirred for a period of time, and the nano-composite photocatalytic material is obtained through filtering, washing, roasting and grinding. The porous carbon nitride and silver bromide nanoparticle composite material is obtained; adding a composite material of porous carbon nitride and silver bromide nanoparticles into deionized water, stirring, then adding the rhenium disulfide quantum dot dispersion liquid, continuously stirring, and then freeze-drying and drying; in the prepared nano composite photocatalytic material, p-g-C3N4 provides stable substrate and basic catalytic activity, AgBr widens the spectral response range and strengthens pollutant adsorption and degradation, ReS2 QDs optimizes charge transfer and improves hydrogen evolution kinetic efficiency, and efficient conversion of solar energy-chemical energy and efficient degradation of organic pollutants are achieved through cooperation of p-g-C3N4, AgBr and ReS2 QDs.

The invention provides a preparation method and application of a samarium-cobalt-based composite wave-absorbing material, by utilizing the method, tetraethyl silicate and ammonia water are added during ball milling to obtain samarium cobalt coated with silicon dioxide, rhenium sulfide grows on the surface of the samarium cobalt coated with the silicon dioxide through a hydrothermal method to obtain Sm2Co17 / Co9S8-coated SiO2-coated ReS2, and after silicon dioxide is coated and sulfide is introduced, the Sm2Co17 / Co9S8-coated SiO2-coated ReS2 is prepared into the samarium-cobalt-based composite wave-absorbing material. The electromagnetic parameters of the samarium cobalt are adjusted, the dielectric property is improved, and the samarium cobalt coated with the silicon dioxide can better prevent the vulcanization phenomenon of the samarium cobalt during growth of rhenium sulfide. Compared with traditional samarium cobalt, the material synthesized by the method has the advantages that the matching thickness is obviously reduced, the effective bandwidth is obviously increased, the minimum reflection loss is also obviously enhanced, and the material has good microwave absorption performance.

The invention discloses a method for preparing a rhenium disulfide film, and belongs to the technical field of semiconductor material preparation. The method comprises the following steps: firstly, fusing rhenium heptoxide into molten soda-lime glass to serve as a rhenium source; then under the catalysis of sodium ions, sulfur powder and rhenium oxide react in the molten state soda-lime glass to generate rhenium disulfide, then the rhenium disulfide is diffused to the surface of the molten state glass, and finally under the driving of carrier gas, the rhenium disulfide is deposited on a mica substrate above the molten state glass to form a continuous film. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

The present invention relates to a mixed-dimensional polarization photodetector of tellurium nanowires / rhenium disulfide and a preparation method thereof. The photodetector includes a substrate, a thin layer of ReS2 disposed on the substrate, tellurium nanowires disposed on the thin layer of ReS2, electrode layers are respectively disposed on the thin layer of ReS2 and one end of the tellurium nanowires, and the thin layer of ReS2 is grown by an optimized CVD process, the tellurium nanowires are grown by a PVD process, and the thin layer of ReS2 and the tellurium nanowires are transferred to a target substrate by a PVD / PDMS dry transfer technique to form a one-dimensional / two-dimensional mixed-dimensional heterojunction; metal electrodes are disposed at both ends of the heterojunction to fabricate a polarization photodetector. The detector exhibits excellent photovoltaic effects, the dynamic light response time is about 20 ms, and it also exhibits superior polarization-sensitive light detection performance, with an anisotropic photocurrent ratio of 2.7.

The application discloses a rhenium disulfide-nitrogen doped porous carbon composite material and a preparation method and application thereof. The preparation method of the rhenium disulfide-nitrogen doped porous carbon composite material comprises the following steps: (1) adding a rhenium source, thiourea and sodium chloride into a folic acid solution and uniformly mixing to obtain a mixed solution, wherein the rhenium source is at least one of ammonium perrhenate and potassium perrhenate; (2) performing freeze drying on the mixed solution to obtain a mixed dry powder; (3) performing heat treatment and sulfuration treatment on the mixed dry powder under an inert atmosphere and at a certain temperature; and (4) performing washing and freeze drying on the product obtained in the step (3) to obtain the rhenium disulfide-nitrogen doped porous carbon composite material. The rhenium disulfide-nitrogen doped porous carbon composite material prepared by the method has good conductivity and low volume expansion effect, and is not prone to agglomeration or accumulation.

The invention discloses a method for preparing a rhenium disulfide film in two steps, and belongs to the technical field of semiconductor material preparation. In the first step, rhenium heptoxide is fused into molten soda-lime glass to serve as a rhenium source. 2, under the catalysis of sodium ions, sulfur powder and rhenium heptoxide react in the molten soda-lime glass to generate rhenium disulfide, the rhenium disulfide is diffused to the surface of the molten glass, and finally, under the driving of carrier gas, the rhenium disulfide is deposited on a mica substrate above to form a continuous film. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

This invention belongs to the technical field of diodes and discloses a molybdenum sulfide rhenium / GaN heterojunction ultraviolet photodiode and its fabrication method. The molybdenum sulfide rhenium / GaN heterojunction ultraviolet photodiode includes a GaN substrate, an Al2O3 buffer layer disposed on the GaN substrate, and Re2O3 layers disposed on the Al2O3 buffer layer. x Mo 1‑x S2 layer; the Al2O3 buffer layer partially covers the GaN substrate, Re x Mo 1‑x The S2 layer covers the upper surface of the Al2O3 buffer layer; electrodes are located on the upper portion of the GaN substrate not covered by the Al2O3 buffer layer, Re x Mo 1‑x Electrodes are provided on the upper portion of the S2 layer. This invention also discloses a method for fabricating a photodiode. The photodiode of this invention exhibits high detectivity, rectification characteristics, responsivity, and low turn-on voltage, and is expected to be applied in fields such as photoelectric detection and visible light communication.

The invention belongs to the technical field of hydrometallurgy, and particularly relates to a calcium polysulfide-based waste acid rhenium supernormal enrichment method. The method comprises the following steps: 1) respectively preparing a calcium-containing mixed solution and a sulfur-containing mixed solution by taking absolute ethyl alcohol as a solvent; 2) introducing nitrogen into the calcium-containing mixed solution for deoxidation, mixing the deoxidized calcium-containing mixed solution with the sulfur-containing mixed solution, and stirring to obtain a calcium sulfide mixed solution; 3) adding sulfur into the calcium sulfide mixed solution, boiling with water to obtain calcium polysulfide, adding triethanolamine and tetrahydrofuran, stirring, carrying out grain growth, centrifugally separating solids, washing, and annealing to obtain nano calcium polysulfide powder; and 4) adding the nano powder into the waste acid, stirring and reacting, and then filtering and separating to obtain the rhenium sulfide enriched slag. According to the method, specific adsorption and enrichment of rhenium in a waste acid system can be achieved by constructing the stable and effective vulcanizing agent, and the whole method has the advantages of being simple and efficient, low in cost, easy to implement and popularize, wide in raw material source, low in equipment requirement, wide in application range and beneficial to industrial application.

The invention belongs to the technical field of photocatalytic hydrogen production, and particularly relates to a TiO2 / NiSe-coated ReS2 + x photocatalytic material with high hydrogen evolution activity and a preparation method thereof. According to the method, nickel selenide (NiSe) is firstly modified on the surface of TiO2, then rhenium sulfide (ReS2 + x) is directionally photodeposited on the surface of NiSe, the NiSe and ReS2 + x cocatalyst which has a core-shell structure and is uniformly dispersed is obtained, and the hydrogen production performance of the TiO2 photocatalyst is greatly enhanced.

The invention discloses a method for preparing a rhenium disulfide film at low pressure, and belongs to the technical field of semiconductor material preparation. According to the method, rhenium / rhenium heptoxide mixed powder formed by partial oxidation of rhenium powder is used as a rhenium source for rhenium disulfide growth, firstly, rhenium heptoxide with high activity and low melting point can be dissolved to react with sulfur powder to generate rhenium disulfide molecules, and then the rhenium disulfide molecules are deposited on a mica substrate under the leading of argon to serve as nucleation points; then, high-melting-point rhenium powder begins to be dissolved under the assistance of dissolved rhenium heptoxide and is guided by argon to reach the mica substrate to continue growth of rhenium disulfide; and finally, obtaining the high-quality rhenium disulfide film on the mica substrate. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.