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5 results about "Rhenium sulfide" patented technology

A method for preparing a two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure

The application discloses a preparation method of a two-dimensional rhenium sulfide-molybdenum sulfide vertical heterostructure. The method is chemical vapor deposition, and Si / SiO2 is used as a substrate, a metal rhenium foil (Re) is used as a rhenium source, and a metal molybdenum foil (Mo) is used as a molybdenum source. The metal rhenium foil is laid on one end surface of the metal molybdenum foil, the substrate is inverted on the metal molybdenum foil, and the substrate is reacted with sulfur vapor to prepare a two-dimensional ReS2 / MoS2 vertical heterostructure with a multilayer ReS2 as a bottom layer and a double-layer MoS2 as a top layer. The obtained two-dimensional ReS2 / MoS2 vertical heterojunction material is a crystal stacked by two crystals with different sizes, presents obvious luminescent properties, can be used as a channel material of a transistor and applied to the field of ultrathin electronic devices, and has potential application in the field of high-efficiency light detectors.
Owner:HANGZHOU DIANZI UNIV

Nano-composite photocatalytic material as well as preparation method and application thereof

The invention discloses a nano-composite photocatalytic material and a preparation method and application thereof.The preparation method comprises the steps that porous carbon nitride is added into deionized water and stirred, then a silver nitrate solution is added and stirred continuously, then a potassium bromide solution is dropwise added and stirred for a period of time, and the nano-composite photocatalytic material is obtained through filtering, washing, roasting and grinding. The porous carbon nitride and silver bromide nanoparticle composite material is obtained; adding a composite material of porous carbon nitride and silver bromide nanoparticles into deionized water, stirring, then adding the rhenium disulfide quantum dot dispersion liquid, continuously stirring, and then freeze-drying and drying; in the prepared nano composite photocatalytic material, p-g-C3N4 provides stable substrate and basic catalytic activity, AgBr widens the spectral response range and strengthens pollutant adsorption and degradation, ReS2 QDs optimizes charge transfer and improves hydrogen evolution kinetic efficiency, and efficient conversion of solar energy-chemical energy and efficient degradation of organic pollutants are achieved through cooperation of p-g-C3N4, AgBr and ReS2 QDs.
Owner:ZUNYI NORMAL COLLEGE

Preparation method and application of samarium-cobalt-based composite wave-absorbing material

The invention provides a preparation method and application of a samarium-cobalt-based composite wave-absorbing material, by utilizing the method, tetraethyl silicate and ammonia water are added during ball milling to obtain samarium cobalt coated with silicon dioxide, rhenium sulfide grows on the surface of the samarium cobalt coated with the silicon dioxide through a hydrothermal method to obtain Sm2Co17 / Co9S8-coated SiO2-coated ReS2, and after silicon dioxide is coated and sulfide is introduced, the Sm2Co17 / Co9S8-coated SiO2-coated ReS2 is prepared into the samarium-cobalt-based composite wave-absorbing material. The electromagnetic parameters of the samarium cobalt are adjusted, the dielectric property is improved, and the samarium cobalt coated with the silicon dioxide can better prevent the vulcanization phenomenon of the samarium cobalt during growth of rhenium sulfide. Compared with traditional samarium cobalt, the material synthesized by the method has the advantages that the matching thickness is obviously reduced, the effective bandwidth is obviously increased, the minimum reflection loss is also obviously enhanced, and the material has good microwave absorption performance.
Owner:HANGZHOU DIANZI UNIV

Rhenium disulfide-nitrogen-doped porous carbon composite material, preparation method and application thereof

The application discloses a rhenium disulfide-nitrogen doped porous carbon composite material and a preparation method and application thereof. The preparation method of the rhenium disulfide-nitrogen doped porous carbon composite material comprises the following steps: (1) adding a rhenium source, thiourea and sodium chloride into a folic acid solution and uniformly mixing to obtain a mixed solution, wherein the rhenium source is at least one of ammonium perrhenate and potassium perrhenate; (2) performing freeze drying on the mixed solution to obtain a mixed dry powder; (3) performing heat treatment and sulfuration treatment on the mixed dry powder under an inert atmosphere and at a certain temperature; and (4) performing washing and freeze drying on the product obtained in the step (3) to obtain the rhenium disulfide-nitrogen doped porous carbon composite material. The rhenium disulfide-nitrogen doped porous carbon composite material prepared by the method has good conductivity and low volume expansion effect, and is not prone to agglomeration or accumulation.
Owner:DONGGUAN UNIV OF TECH

A molybdenum rhenium sulfide / gan heterojunction ultraviolet photodiode and a preparation method thereof

PendingCN122373483AHeterojunctionUltraviolet
This invention belongs to the technical field of diodes and discloses a molybdenum sulfide rhenium / GaN heterojunction ultraviolet photodiode and its fabrication method. The molybdenum sulfide rhenium / GaN heterojunction ultraviolet photodiode includes a GaN substrate, an Al2O3 buffer layer disposed on the GaN substrate, and Re2O3 layers disposed on the Al2O3 buffer layer. x Mo 1‑x S2 layer; the Al2O3 buffer layer partially covers the GaN substrate, Re x Mo 1‑x The S2 layer covers the upper surface of the Al2O3 buffer layer; electrodes are located on the upper portion of the GaN substrate not covered by the Al2O3 buffer layer, Re x Mo 1‑x Electrodes are provided on the upper portion of the S2 layer. This invention also discloses a method for fabricating a photodiode. The photodiode of this invention exhibits high detectivity, rectification characteristics, responsivity, and low turn-on voltage, and is expected to be applied in fields such as photoelectric detection and visible light communication.
Owner:SOUTH CHINA UNIV OF TECH