Growth method of rhenium disulfide monocrystal

A rhenium disulfide and growth method technology, which is applied in the growth field of rhenium disulfide single crystal, can solve the problems of complex growth, low lattice symmetry, and low growth efficiency, and achieve high-purity and high-quality effects

Inactive Publication Date: 2016-09-28
南京安京太赫光电技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the special structure and properties of the material, the preparation of the bulk material still faces many problems
The first is the rhenium source required for the preparation of the material, which has a variety of valence states, resulting in uncontrollable growth; and the melting point of elemental rhenium is as high as 3180 ° C, and the boiling point is as high as 5900 ° C, resulting in a particularly low growth efficiency; especially ReS 2 The low lattice symmetry and weak interlayer coupling make the growth behavior of the material block more complex than that of traditional two-dimensional materials, and the acquisition of materials is more difficult than other two-dimensional material blocks, which also hinders its growth in A more in-depth study of optics and electricity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0008] 1. Weigh 0.936g of rhenium trioxide and 0.28g of pure sulfur powder (the appropriate amount is 0.256g), pour them into a section of quartz tube with an inner diameter of 13mm and a length of about 15cm, and seal both ends after vacuuming.

[0009] 2. Place the sealed quartz tube in a box furnace and heat up to 400°C in 2 hours.

[0010] 3. Maintain the temperature in the single-temperature-zone tube furnace at 400 degrees Celsius for 24 hours.

[0011] 4. Take out the synthesized powder, grind it finely, and burn it on an alcohol lamp for more than 15 minutes to remove excess sulfur.

[0012] 5. Pour the remaining powder after burning into a section of quartz tube with an inner diameter of 13 mm and a length of about 20 cm, and add 40 mg of bromine, then vacuumize and seal both ends.

[0013] 6. Put the quartz tube into the three-temperature zone furnace, place the end with the sample in the middle temperature zone of the three-temperature zone furnace, and use 1...

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Abstract

The invention provides a growth method of rhenium disulfide monocrystal, including: mixing and placing rhenium trisulfide and excessive sulfur powder according to a ratio into a quartz tube, vacuumizing, holding a temperature of 400 DEG C for one to two days, grinding obtained powder, burning on an alcohol burner, and removing redundant sulfur to obtain high-purity rhenium disulfide polycrystal; mixing the obtained desulfurized rhenium disulfide polycrystal with a transport agent bromine, sealing in a quartz tube, vacuumizing, placing in a multi-temperature furnace, and growing rhenium disulfide monocrystal by a chemical gaseous transport method.

Description

technical field [0001] The invention relates to a growth method of rhenium disulfide single crystal. Background technique [0002] Transition metal sulfide MS 2 (M can be transition metal materials such as W, Mo, Re) occupies an important proportion in the two-dimensional material single crystal, as an important member of the two-dimensional atomic crystal material family, rhenium disulfide (ReS 2 ) have structures and properties different from traditional two-dimensional materials: the low lattice symmetry leads to the unique two-dimensional in-plane anisotropic optical and electrical properties of rhenium disulfide, which can be used in field effect transistors, photodetectors and new concept devices etc. have great application value, so rhenium disulfide has also become a popular material in the research direction of two-dimensional materials. However, due to the special structure and properties of the material, the preparation of the bulk material still faces many prob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B23/00C30B28/02
CPCC30B29/46C30B23/00C30B28/02
Inventor 邱俊
Owner 南京安京太赫光电技术有限公司
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