Organic light-emitting device and preparation method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of small driving current, low device life, and large driving current of light-emitting devices.
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[0057] see figure 2 , the preparation method of the organic electroluminescent device of an embodiment, comprises the following steps:
[0058] Step S110: providing a substrate, and forming an anode on the substrate by vacuum sputtering.
[0059] The substrate is preferably a transparent glass substrate. The anode is formed on a transparent glass substrate by vacuum sputtering.
[0060] The anode is formed of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or gallium zinc oxide (GZO). The thickness of the anode is 70-200 nanometers.
[0061] The vacuum degree of vacuum sputtering is 5×10 -4 Pa.
[0062] Step S120: Forming a first light-emitting functional layer on the anode by vacuum evaporation.
[0063] The first light-emitting functional layer includes a first hole injection layer, a first hole transport layer, a first light-emitting layer and a first hole blocking layer sequentially stacked on the anode.
[0064] The first hole injection...
Embodiment 1
[0099] The structure is Glass / ITO / CuPc / NPB / DCJTB:Alq 3 / TPBi / LiN 3 :TPBi / HAT-CN / ReO 3 :NPB / NPB / DCJTB:Alq 3 Fabrication of Organic Electroluminescent Devices Based on / TPBi / Ag
[0100] (1) Provide transparent glass as the substrate, denoted as Glass. Put the transparent glass in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0101] (2) Vacuum sputtering is used to form an anode on the cleaned and dried transparent glass. Vacuum degree is 5×10 -4 Pa. The anode is formed of indium tin oxide (ITO). The thickness of the anode is 100nm;
[0102] (3) A first hole injection layer, a first hole transport layer, a first light emitting layer and a first hole blocking layer are sequentially formed on the anode by vacuum evaporation. Vacuum degree is 5×10 -4Pa. The first hole injection layer is formed of copper phthalocyanine (CuPc), and the thick...
Embodiment 2
[0108] The structure is Glass / IZO / ZnPc / TPD / C545T:Alq 3 / PBD / CsN 3 :Bphen / F 4 -TCNQ / WO 3 :MeO-TPD / TPD / C545T:Alq 3 Preparation of Organic Electroluminescent Devices Based on / Bphen / Al
[0109] (1) Provide transparent glass as the substrate, denoted as Glass. Put the transparent glass in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0110] (2) Vacuum sputtering is used to form an anode on the cleaned and dried transparent glass. Vacuum degree is 5×10 -4 Pa. The material of the anode is indium zinc oxide (IZO). The thickness of the anode is 70nm;
[0111] (3) A first hole injection layer, a first hole transport layer, a first light emitting layer and a first hole blocking layer are sequentially formed on the anode by vacuum evaporation. Vacuum degree is 5×10 -4 Pa. The first hole injection layer is formed of zinc phthalocyanine (ZnPc), ...
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