Preparation of rhenium sulfide and cadmium sulfide/rhenium sulfide composite material

Abstract

The invention discloses preparation of rhenium sulfide and a cadmium sulfide/rhenium sulfide composite material. A two-dimensional monolayer rhenium disulfide is grown on a mica sheet substrate through an ordinary pressure chemical vapor deposition method with sulfur powder as a sulfur source and rhenium trioxide as a rhenium source under protection of an inert gas and a water-assisting precondition; by means of a secondary growth method, cadmium sulfide particles are again deposited on the mica sheet substrate with the two-dimensional monolayer rhenium disulfide, and a CdS/ReS2 composite material with the cadmium sulfide particles growing on the surface of the rhenium sulfide is obtained. The preparation of the rhenium sulfide and the cadmium sulfide/ rhenium sulfide composite material have the advantages that the process is simple, low-cost, rapid, highly efficient and controllable, and the high-quality single-layer rhenium sulfide is prepared. The CdS/ReS2 composite material obtained by depositing the cadmium sulfide on the two-dimensional material rhenium sulfide has more excellent photoelectric properties and has a high response rate while being applied to a photoelectric device.

Description

technical field [0001] The invention belongs to the field of optical materials and their preparation, in particular to the preparation of rhenium sulfide and cadmium sulfide / rhenium sulfide (CdS / ReS 2 ) composite material. Background technique [0002] In recent years, due to their unique physical properties, such as mechanical strength, flexibility, and photosensitivity, two-dimensional transition metal sulfides have broad application prospects in the fields of future electronics, optoelectronics, energy storage devices, and catalysis, and have rapidly become Research hotspots in the field of materials. The chemical formula for two-dimensional (2D) transition metal dichalcogenides (TMDS) is MX 2 , M refers to transition metal elements (such as: molybdenum, tungsten, niobium, rhenium, titanium), X refers to chalcogen elements (such as: sulfur, selenium, tellurium), such as two-dimensional semiconductor material MoS 2 、WS 2 、WSe 2 . Generally, single-layer transition me...

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Problems solved by technology

Although these methods can obtain ReS 2 thin film, but obtained ReS 2 The size of the film is small, and the controllability of size and thickness is poor, which makes it impossible to realize large-scale device applications in the future

Chemical vapor deposition (CVD) is considered to be an effective technique for preparing large-area high-quality two-dimensional materials, but due to the 2 Due to the particularity of the material itself, there are still many difficulties in preparing the material by traditional CVD technology

CVD preparation of two-dimensional ReS in the existing literature 2 The material discloses the following two methods: one is based on ammonium perrhenate (NH 4 ReO 4 ) for the Re source to grow ReS 2 , but the precursor decomposition produces more by-products, resulting in the prepared ReS 2 The lattice quality of the film is very poor, and the electrical mobility is extremely low; the other is to grow ReS with Re powder and S powder as the source 2 , but because the melting point of Re powder is extremely high (3180°C), the vapor pressure of Re in the general growth temperature range (500-1000°C) is extremely low, resulting in very low growth efficiency of this method, and the large-area preparation of this material cannot be realized

In particular, since ReS 2 The weak interlayer force of the material, and the silicon dioxide substrate used in the above method has a large surface atomic diffusion barrier, which makes it easy to grow thick layers on the silicon dioxide substrate, and it is difficult to obtain samples with uniform layers

Therefore, ReS with large area, high quality and uniform layer number 2 The controllable preparation of thin films remains a big challenge

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