Gallium oxide-based solar blind detector and preparation method thereof

A gallium oxide and photodetector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of large dark current of the detector, non-adjustable, slow device response speed, etc., and increase effective work Interval, repair interface damage, and improve the effect of response speed

Active Publication Date: 2019-12-13
UNIV OF SCI & TECH OF CHINA
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet the needs of practical applications.
Existing gallium oxide-based solar-blind detectors usually use metal-semiconductor-metal (MSM) and Schottky junction (Schottky diode) two-terminal structures, but the dark current of the detectors with these two structures is generally large and the device fabrication Not adjustable after completion
In addition, metal-semiconductor-metal structure detectors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium oxide-based solar blind detector and preparation method thereof
  • Gallium oxide-based solar blind detector and preparation method thereof
  • Gallium oxide-based solar blind detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] Preparation of the layer The epitaxial layer can also be prepared by various other deposition or growth methods, including but not limited to methods such as MOCVD or PLD to obtain gallium oxide epitaxial films.

[0044] see figure 2 As shown, photolithographic patterning is used to isolate the device of the sample by reactive ion beam etching; the etching parameters can be: using Cl 2 / Ar gas for etching, where Cl 2 The flow rate was 15 sccm, the Ar flow rate was 5 sccm, the ICP (inductively coupled plasma) power was 400W, and the RF power was 200W.

[0045] see image 3 As shown, using a standard photolithographic lift-off process, the source and drain electrodes are deposited by electron beam evaporation, and the metals used are platinum / titanium / gold, and gallium oxide (Ga 2 o 3) to form a Schottky contact, the electrode thicknesses are 40nm / 10nm / 50nm respectively; the thickness range of platinum is 10-60nm, the thickness range of titanium is 5-20nm, and the th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Doping concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a solar blind photodetector and a preparation method thereof. The solar blind photodetector comprises a gallium oxide substrate containing a gallium oxide epitaxial layer, a source and a drain, a silicon oxide passivation layer, an alumina layer and a gate, wherein the source and the drain form Schottky contact with the gallium oxide substrate respectively; the silicon oxidepassivation layer is formed on the gallium oxide substrate, the source and the drain; a trench in the gallium oxide substrate is opened from the silicon oxide passivation layer; the alumina layer isformed on the bottom of the trench and the side wall of the trench; and the gate is arranged on the alumina layer of the trench and the silicon oxide passivation layer. A specific three-terminal structure is adopted, the carrier concentration of the trench can be adjusted through the gate, so that the dark current of the device can be conveniently adjusted.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and further relates to a gallium oxide-based solar-blind detector and a preparation method of the gallium oxide-based solar-blind detector. Background technique [0002] Solar-blind refers to ultraviolet light with a wavelength range of 200-280nm. Solar-blind photodetectors have outstanding advantages such as small background interference, and have broad application prospects in the fields of warning and guidance. The band gap of gallium oxide directly corresponds to the solar blind band, and is a natural solar blind detection material. There are mainly the following parameters to characterize the performance of photodetectors: photoresponsivity, dark current, specific detectivity, response speed, and quantum efficiency. Due to the limitations of material quality and device structure, the performance of current gallium oxide-based solar-blind detectors is poor, which is not enough to meet...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/113H01L31/18
CPCH01L31/1136H01L31/18Y02P70/50
Inventor 龙世兵吴枫
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap