13 results about "Reactive ion beam etching" patented technology

The invention relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of scarcity of experimental data through physical driving simulation and a physics-based rendering algorithm, and provides large-scale field specific training data for a deep learning model. The bidirectional coupling simulation model generates defect morphology prediction data conforming to an etching dynamics law based on real process parameters and material parameters, the prediction data is converted into a synthetic image with real microscopic image statistical characteristics by a physical rendering algorithm, and the quality and consistency of the synthetic data are ensured by an automatic labeling and statistical verification process. According to the method, the number of samples of the ternary association database is multiplied, and extreme process conditions and rare defect modes which are difficult to obtain through experimental collection are covered.

The invention relates to a reactive ion beam etching method of a large-size diffractive optical element and a vacuum etching machine. The method comprises the following steps: in a reactive ion beam main etching stage, a main ion source emits a high-energy main etching reactive ion beam to scan and etch the whole surface of the large-size diffractive optical element; in a selective area reaction ion beam ashing stage, an auxiliary ion source is controlled to emit a low-energy ashing reaction ion beam, and scanning ashing processing is carried out on a central effective area of the large-size diffractive optical element; in the reaction ion beam edge removal stage, the auxiliary ion source is controlled to emit edge removal reaction ion beams with set process parameters, and edge thickening photoresist of the large-size diffractive optical element is removed; and taking out the large-size diffraction optical element finished product after etching is completed. According to the technical scheme, the production cost of reactive ion beam etching of the large-size diffractive optical element can be reduced, and the production efficiency can be improved.

The invention discloses a preparation method of a three-dimensional titanium dioxide micro-nano structure, which belongs to the technical field of micro-nano structure preparation, and comprises the following steps: evaporating a titanium dioxide film on a clean glass substrate; spin-coating positive photoresist on the titanium dioxide thin film; carrying out electron beam exposure on the photoresist, customizing a pattern, and carrying out developing and fixing treatment on the photoresist; evaporating a chromium (Cr) film on the developed and fixed sample; stripping the residual photoresist, and obtaining a patterned chromium hard mask on the titanium dioxide thin film; performing reactive ion beam etching on the titanium dioxide film; and removing the chromium hard mask from the etched sample to obtain the three-dimensional titanium dioxide nano-column array micro-nano structure. The titanium dioxide micro-nano structure prepared by the method has high degree of freedom, and regular regulation and control of nano structure unit parameters can be realized by changing reactive ion beam etching process parameters.

The application provides a tilted micro-nano structure metasurface and a preparation method and application thereof. The method comprises the following steps: (1) providing a substrate, and sequentially forming a functional material layer and a patterned metal mask covering the functional material layer on the substrate, wherein an exposed area to be etched in the functional material layer is defined by the patterned metal mask; (2) using the patterned metal mask as an etching barrier layer, and performing tilted etching on the exposed area of the functional material layer by using a reactive ion beam etching technology, so that an ion beam is incident at a predetermined tilt angle of 1-80 degrees relative to the normal direction of the substrate, thereby converting the planar pattern of the patterned metal mask into a three-dimensional micro-nano structure with a corresponding tilt angle in the functional material layer, and obtaining the tilted micro-nano structure metasurface. The tilted micro-nano structure metasurface can be used in optical devices. The application realizes accurate and flexible control of the tilt angle.

The application relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of experimental data scarcity through physical driving simulation and a physical-based rendering algorithm, and provides large-scale field-specific training data for a deep learning model. A bidirectional coupling simulation model generates defect morphology prediction data conforming to etching dynamics rules based on real process parameters and material parameters, a physical rendering algorithm converts the prediction data into synthetic images with real microscopic image statistical characteristics, and an automatic labeling and statistical verification process ensures the quality and consistency of the synthetic data. The method expands the sample quantity of the ternary correlation database by several times, and covers extreme process conditions and rare defect modes that are difficult to obtain through experimental acquisition.

The invention relates to a device for focused ion beam reaction etching, which comprises a porous gas guide component, a gas inlet component arranged on the periphery of the porous gas guide component and a gas inlet quick-plug connector arranged on the gas inlet component, a graphite chassis is arranged at the bottom of the gas inlet component, and the graphite chassis and the gas inlet component are fixed by a base and an ion source. The ion source emits a focused ion beam, the porous gas guide component is arranged at the beam waist position of the ion beam, a gas mixing chamber is arranged in a region between the porous gas guide component and the gas inlet component, and reaction gas enters the gas mixing chamber from the gas inlet quick-plug connector and then is guided by the porous gas guide component to enter the beam waist position of the ion beam. The problem that a common focusing ion source cannot use a reactive ion beam for etching is solved.

The application provides a piezoelectric MEMS hydrophone based on a bionic cochlea structure and a preparation method thereof. The preparation method comprises the following steps: forming a blocking layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer on a substrate, and forming a hard mask on the back of the substrate; performing photoetching on the upper electrode layer and then performing reactive ion beam etching to obtain a bionic cochlea structure pattern; performing photoetching and patterning on the piezoelectric layer to obtain a bionic cochlea structure pattern, and then etching to expose the lower electrode layer; forming a positive electrode and a negative electrode on the upper electrode layer; forming an etched hard mask; performing deep silicon etching steps on the back after photoetching and patterning to obtain a back bionic cochlea spiral cavity structure and in-situ arrayed cilia; etching and releasing the device; bonding the piezoelectric vector hydrophone with a PCB board, and wire-bonding the positive electrode and the negative electrode with the PCB board. The hydrophone has the characteristics of miniaturization, realizes wide-frequency underwater sound detection by using a bionic cochlea spiral diaphragm structure, and improves detection sensitivity by using in-situ integrated bionic cochlea cilia.

A method of fabricating metamaterial structures without exceeding 30° C. or less in temperature comprises forming a metasurface mask by depositing a layer of nanoparticles on a surface of the substrate, etching the surface of the substrate with the nanoparticles thereon using reactive ion beam etching (RIBE), and removing at least a portion of the nanoparticles from the etched surface. Nanometer size surface features are thereby formed on the surface of a material without exceeding 30° C. in temperature, thereby forming metamaterial structures with a reduced incidence of thermal damage to the material.

This invention discloses a method for fabricating a photomask using deep silicon etching technology, comprising the following steps: a) pretreatment of a silicon substrate; b) coating a pretreated silicon substrate with photoresist, followed by soft baking, resting, exposure, development, fixing, and post-baking to form the desired pattern on the silicon substrate; c) etching and cleaning the silicon substrate from step b to obtain the photomask. A method for fabricating perovskite array patterns using this photomask is also provided. This invention employs dry etching to fabricate perovskite array patterns, utilizing reactive ion beam etching (RIB) technology. The process is simple, the IIB equipment is simple in structure and inexpensive, and it is compatible with all MEMS-scale manufacturing plants, significantly reducing manufacturing costs. It proposes a new process strategy for perovskite array patterning, reducing side corrosion, improving patterning accuracy, and is suitable for micron-level pattern etching.

This invention discloses a method for patterning perovskite thin films using reactive ion etching (RIE) technology, comprising the following steps: 1) substrate / substrate cleaning; 2) perovskite film deposition; and 3) reactive ion beam etching of the perovskite thin film. This invention is the first to propose using reactive ion beam etching for perovskite, offering a new process strategy for perovskite array patterning. Furthermore, this dry etching process avoids solvent corrosion of perovskite and is not limited by the type of perovskite, making it applicable to all types of perovskite thin film materials. Compared to the previously proposed template method for perovskite patterning, it is simpler. Secondly, the reactive ion beam etching equipment is simple in structure, inexpensive, and compatible with all MEMS-scale manufacturing plants, significantly reducing manufacturing costs. It is applicable to any substrate material, broadening the compatibility for manufacturing various functional materials.

The invention discloses an etching method of a perovskite thin film, which comprises the following steps of: depositing the perovskite thin film on a substrate / base, and performing reactive ion beam etching on the perovskite thin film; a process gas selected for reactive ion beam etching is a mixed atmosphere comprising tetrafluoromethane, oxygen and argon. According to the method, an uncommon reactive ion etching (RIE) process in perovskite etching is adopted, a process gas is further set to be a mixed atmosphere comprising tetrafluoromethane, oxygen and argon, and mixed plasmas of reactive gas and inert gas are used for etching the perovskite thin film. Wherein fluorine free radicals generated by decomposition of tetrafluoromethane preferentially react with Pb / I bonds in perovskite, oxygen inhibits carbon residues, argon enhances anisotropy, and according to the reactive ion etching process, CF4 / O2 / Ar mixed gas is adopted for etching, the high etching rate (gt, 50 nm / min) of the perovskite thin film and low damage to the thin film can be achieved.

The present application relates to a kind of micro-nano structure manufacturing method, by the improvement of traditional reactive ion beam etching technology, first using colloidal ball self-assembly technology to prepare nanosphere array of periodic structure on the surface of element, then etching colloidal ball using wide-beam ion source, and control process conditions such as working gas pressure, temperature, time, etching power, adjust the duty cycle between colloidal ball.Then using the low-temperature deposition method of film, thin film mask is plated into the gap between colloidal ball, then colloidal ball is removed using matching solution.Finally, using wide-beam ion source etching element, the pattern of thin film mask is transferred to element, and finally micro-nano structure element is obtained.The present application can provide sample for the experimental research or industrial production of high-power laser window.