25 results about "Reactive ion beam etching" patented technology

The invention provides an inclined grating preparation method and device, and relates to the technical field of grating manufacturing. The method comprises the steps of performing ion beam etching on a hard mask film layer of a to-be-etched part based on a first inclination angle of an inclined table for placing the to-be-etched part to obtain a mask etching part; and performing reactive ion beam etching on the material layer of the mask etching piece based on the second inclination angle of the inclined table on which the mask etching piece is placed to obtain an inclined grating structure. The device comprises a controller used for determining a first inclination angle and a second inclination angle of an inclined table based on a design structure of a to-be-etched part; controlling an inclined table to move to a first inclination angle, and controlling first etching equipment to perform ion beam etching on the hard mask layer of the to-be-etched part to obtain a mask etching part; and controlling the tilting table to move to a second tilting angle, and controlling the second etching equipment to perform reactive ion beam etching on the material layer of the mask etching piece to obtain the tilting grating structure.

The invention relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of scarcity of experimental data through physical driving simulation and a physics-based rendering algorithm, and provides large-scale field specific training data for a deep learning model. The bidirectional coupling simulation model generates defect morphology prediction data conforming to an etching dynamics law based on real process parameters and material parameters, the prediction data is converted into a synthetic image with real microscopic image statistical characteristics by a physical rendering algorithm, and the quality and consistency of the synthetic data are ensured by an automatic labeling and statistical verification process. According to the method, the number of samples of the ternary association database is multiplied, and extreme process conditions and rare defect modes which are difficult to obtain through experimental collection are covered.

An ion beam etching method includes preparing a substrate on which a plurality of magnetic random access memory (MRAM) stacks are provided, performing main etching using ion beam etching such that sidewalls of the plurality of MRAM stacks have a target angle of inclination, and removing a conductive etching by-product redeposited on the sidewalls of the plurality of MRAM stacks during the main etching by performing trim etching using ion beam etching, where the performing the main etching includes performing a first main etching using ion beam etching on the plurality of MRAM stacks at a first incidence angle with respect to an upper surface of the substrate, and after performing the first main etching, performing a second main etching using ion beam etching on the plurality of MRAM stacks at a second incidence angle that is smaller than the first incidence angle.

The invention relates to a reactive ion beam etching method of a large-size diffractive optical element and a vacuum etching machine. The method comprises the following steps: in a reactive ion beam main etching stage, a main ion source emits a high-energy main etching reactive ion beam to scan and etch the whole surface of the large-size diffractive optical element; in a selective area reaction ion beam ashing stage, an auxiliary ion source is controlled to emit a low-energy ashing reaction ion beam, and scanning ashing processing is carried out on a central effective area of the large-size diffractive optical element; in the reaction ion beam edge removal stage, the auxiliary ion source is controlled to emit edge removal reaction ion beams with set process parameters, and edge thickening photoresist of the large-size diffractive optical element is removed; and taking out the large-size diffraction optical element finished product after etching is completed. According to the technical scheme, the production cost of reactive ion beam etching of the large-size diffractive optical element can be reduced, and the production efficiency can be improved.

The invention discloses a preparation method of a three-dimensional titanium dioxide micro-nano structure, which belongs to the technical field of micro-nano structure preparation, and comprises the following steps: evaporating a titanium dioxide film on a clean glass substrate; spin-coating positive photoresist on the titanium dioxide thin film; carrying out electron beam exposure on the photoresist, customizing a pattern, and carrying out developing and fixing treatment on the photoresist; evaporating a chromium (Cr) film on the developed and fixed sample; stripping the residual photoresist, and obtaining a patterned chromium hard mask on the titanium dioxide thin film; performing reactive ion beam etching on the titanium dioxide film; and removing the chromium hard mask from the etched sample to obtain the three-dimensional titanium dioxide nano-column array micro-nano structure. The titanium dioxide micro-nano structure prepared by the method has high degree of freedom, and regular regulation and control of nano structure unit parameters can be realized by changing reactive ion beam etching process parameters.

The invention discloses a forming method of a semiconductor structure and a cleaning method of an etching cavity. The forming method of the semiconductor structure comprises the following steps: providing a substrate; forming a dielectric layer on the substrate; forming a multi-element oxide layer on the dielectric layer; the multi-element oxide layer is etched through a reactive ion beam etching process, an opening exposing the dielectric layer is formed in the multi-element oxide layer, and main etching gas of the reactive ion beam etching process comprises one or more combinations of carbonyl gas and alkyl gas. According to the forming method provided by the embodiment of the invention, high steepness of the side wall of the opening can be realized, residues and deposition of etching byproducts are reduced, over-etching of the dielectric layer is avoided, and the performance of the semiconductor structure is improved.

An off-axis illumination grating and a preparation method therefor, and a separable off-axis illumination lithography mask. The preparation method comprises: by means of electron beam lithography and reactive ion etching, preparing a grating master template (1) having a grating pattern (S1); copying the grating pattern on the grating master template (1) to the surface of a working template (2) by means of first nanoimprint, so as to form a working template having the grating pattern (S2); sequentially preparing a grating material layer (4), a transfer layer (5) and an imprint resist layer (6) on a substrate (3), copying, by means of second nanoimprint, the grating pattern of the working template (2) obtained in step (S2) to the imprint resist layer (6), and performing curing (S3); and performing etching transfer on the grating pattern on the imprint resist layer (6) to the transfer layer (5) and the grating material layer (4) in sequence, and removing the residual transfer layer (5), so as to obtain an off-axis illumination grating (S4). The off-axis illumination grating can be separated from a mask, and can be reused.

The invention provides an interconnection method and system for a silicon-based barrier impurity band device and a readout circuit, and the method comprises the steps: forming a positive electrode and a negative electrode which are in good ohmic contact on the surfaces of a contact layer of the silicon-based barrier impurity band device and the readout circuit through photoetching, electron beam evaporation and stripping; depositing a silicon nitride passivation layer on the positive electrode and the negative electrode through a plasma enhanced chemical vapor deposition process; forming a positive electrode hole and a negative electrode hole in the silicon nitride passivation layer through photoetching, reactive ion beam etching and wet etching processes; and preparing indium columns on the positive electrode hole and the negative electrode hole through photoetching, electron beam evaporation and stripping. According to the method, electrode holes are etched in a passivated silicon-based impurity-blocking band detector and a readout circuit wafer by utilizing the characteristic that indium is infiltrated to gold but not infiltrated to silicon nitride, and an indium column is fused and shrunk into a ball to form a self-alignment effect in a backflow process, so that the problem of alignment errors in a flip-chip bonding process can be effectively solved, and the reliability of the flip-chip bonding process is improved. And the interconnection accuracy and reliability are improved.

The present invention discloses a two-dimensional material nanostructure and a preparation method and application thereof, wherein the method comprises the following steps: S1: transferring the two-dimensional material to a substrate; S2: spin coating a positive electron beam glue, and obtaining the nanostructure of the two-dimensional material by using an electron beam exposure system according to a designed layout; S3: etching the two-dimensional material nanostructure in S2 by using a reactive ion beam, and removing the positive electron beam glue in S2; S4: redesigning the layout, spin coating a positive photoresist, and performing overlaying by using a maskless photolithography technique, and exposing the portion outside the two-dimensional material nanostructure in S3 by developing after the overlaying is completed; S5: etching the exposed two-dimensional material in S4 by using oxygen plasma, so as to remove the portion outside the two-dimensional material nanostructure. The present invention prepares a nanostructure with a gap of 100 to 500 nm by using an electron beam exposure system and a maskless photolithography system.

The application provides a tilted micro-nano structure metasurface and a preparation method and application thereof. The method comprises the following steps: (1) providing a substrate, and sequentially forming a functional material layer and a patterned metal mask covering the functional material layer on the substrate, wherein an exposed area to be etched in the functional material layer is defined by the patterned metal mask; (2) using the patterned metal mask as an etching barrier layer, and performing tilted etching on the exposed area of the functional material layer by using a reactive ion beam etching technology, so that an ion beam is incident at a predetermined tilt angle of 1-80 degrees relative to the normal direction of the substrate, thereby converting the planar pattern of the patterned metal mask into a three-dimensional micro-nano structure with a corresponding tilt angle in the functional material layer, and obtaining the tilted micro-nano structure metasurface. The tilted micro-nano structure metasurface can be used in optical devices. The application realizes accurate and flexible control of the tilt angle.

The application relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of experimental data scarcity through physical driving simulation and a physical-based rendering algorithm, and provides large-scale field-specific training data for a deep learning model. A bidirectional coupling simulation model generates defect morphology prediction data conforming to etching dynamics rules based on real process parameters and material parameters, a physical rendering algorithm converts the prediction data into synthetic images with real microscopic image statistical characteristics, and an automatic labeling and statistical verification process ensures the quality and consistency of the synthetic data. The method expands the sample quantity of the ternary correlation database by several times, and covers extreme process conditions and rare defect modes that are difficult to obtain through experimental acquisition.

The invention relates to a device for focused ion beam reaction etching, which comprises a porous gas guide component, a gas inlet component arranged on the periphery of the porous gas guide component and a gas inlet quick-plug connector arranged on the gas inlet component, a graphite chassis is arranged at the bottom of the gas inlet component, and the graphite chassis and the gas inlet component are fixed by a base and an ion source. The ion source emits a focused ion beam, the porous gas guide component is arranged at the beam waist position of the ion beam, a gas mixing chamber is arranged in a region between the porous gas guide component and the gas inlet component, and reaction gas enters the gas mixing chamber from the gas inlet quick-plug connector and then is guided by the porous gas guide component to enter the beam waist position of the ion beam. The problem that a common focusing ion source cannot use a reactive ion beam for etching is solved.

A method of fabricating metamaterial structures without exceeding 30° C. or less in temperature comprises forming a metasurface mask by depositing a layer of nanoparticles on a surface of the substrate, etching the surface of the substrate with the nanoparticles thereon using reactive ion beam etching (RIBE), and removing at least a portion of the nanoparticles from the etched surface. Nanometer size surface features are thereby formed on the surface of a material without exceeding 30° C. in temperature, thereby forming metamaterial structures with a reduced incidence of thermal damage to the material.

The application provides a piezoelectric MEMS hydrophone based on a bionic cochlea structure and a preparation method thereof. The preparation method comprises the following steps: forming a blocking layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer on a substrate, and forming a hard mask on the back of the substrate; performing photoetching on the upper electrode layer and then performing reactive ion beam etching to obtain a bionic cochlea structure pattern; performing photoetching and patterning on the piezoelectric layer to obtain a bionic cochlea structure pattern, and then etching to expose the lower electrode layer; forming a positive electrode and a negative electrode on the upper electrode layer; forming an etched hard mask; performing deep silicon etching steps on the back after photoetching and patterning to obtain a back bionic cochlea spiral cavity structure and in-situ arrayed cilia; etching and releasing the device; bonding the piezoelectric vector hydrophone with a PCB board, and wire-bonding the positive electrode and the negative electrode with the PCB board. The hydrophone has the characteristics of miniaturization, realizes wide-frequency underwater sound detection by using a bionic cochlea spiral diaphragm structure, and improves detection sensitivity by using in-situ integrated bionic cochlea cilia.

The invention discloses a three-dimensional microstructure etching method for analyzing contour evolution based on discrete point iteration. The three-dimensional microstructure etching method comprises the following steps: firstly, plating a mask on the surface of a sample piece to be etched; the method comprises the following steps: establishing a coordinate system according to an expected structure of a to-be-etched sample piece, calculating a unit tangent angle, an actual beam incidence angle and an actual etching factor of each to-be-etched point in a to-be-etched point set of # imgabs0 # at the current moment, and calculating the actual beam incidence angle of each to-be-etched point by taking dt as a time increment, according to the to-be-etched point set at the current moment # imgabs1 #, coordinates of to-be-etched points of the to-be-etched point set at the next moment # imgabs2 # are calculated, and iteration is repeated until the to-be-etched point set at the next moment # imgabs3 # meets an expected value; and then putting the sample piece to be etched into reactive ion beam etching equipment, and sequentially performing reactive ion beam etching processing on each point to be etched according to the actual beam incidence angle and the actual etching factor of each point to be etched. The invention aims to realize three-dimensional microstructure etching based on the reactive ion beam etching process and improve the manufacturing precision of the three-dimensional microstructure.

A forming method of a semiconductor structure comprises the following steps: providing a substrate; forming a groove in the substrate, wherein an included angle formed by the side wall and the bottom of the groove is a round angle; performing modification treatment on the substrate at the rounded corner by adopting a reactive ion beam etching process, and forming a modified layer in the substrate at the rounded corner; and removing the modified layer by adopting an ion beam etching process. According to the forming method provided by the embodiment of the invention, the defect of the fillet at the bottom of the groove is improved by utilizing the high selection ratio of the modified layer and the substrate, and the quality of subsequent epitaxy is improved, so that the performance of the formed semiconductor structure is improved.

The present application discloses a preparation method of a bud-shaped nanostructure and a bud-shaped nanostructure template, the method comprising: providing a substrate; forming a metal film layer on the surface of the substrate; forming a photoresist layer on the surface of the metal film layer, the photoresist layer having ring terraces; performing reactive ion beam etching on the metal film layer, the angle between the etching beam and the normal of the metal film layer being between 75° and 89°; removing the photoresist layer to obtain a bud-shaped nanostructure with periodic distribution. The bud-shaped nanostructure template comprises a substrate and a metal film layer arranged on the surface of the substrate, the metal film layer having a periodically arranged bud-shaped nanostructure. There is no need to use various chemicals to perform corrosion operations on the adhesive structure, which can avoid introducing other unnecessary defects, simplify the operation steps, and ensure the safety of the experimenters. At the same time, by controlling the ring terrace layout on the photoresist layer and combining the etching beam, a periodic bud-shaped nanostructure can be obtained simply and conveniently.

A method of fabricating metamaterial structures without exceeding 30° C. or less in temperature comprises forming a metasurface mask by depositing a layer of nanoparticles on a surface of the substrate, etching the surface of the substrate with the nanoparticles thereon using reactive ion beam etching (RIBE), and removing at least a portion of the nanoparticles from the etched surface. Nanometer size surface features are thereby formed on the surface of a material without exceeding 30° C. in temperature, thereby forming metamaterial structures with a reduced incidence of thermal damage to the material.

The invention provides a method for forming a semiconductor structure. The method comprises the following steps: providing a substrate; etching the substrate by adopting a first reactive ion beam etching process, and forming an initial shallow trench in the substrate; the surface of the initial shallow trench is etched through at least one second reactive ion beam etching process, a shallow trench is formed, and the surface roughness of the shallow trench is smaller than that of the initial shallow trench; the method comprises the following steps of: firstly, drawing the shape of an initial shallow trench by using a first reactive ion etching process, and then etching the surface of the initial shallow trench by using a second reactive ion beam etching process at least once, so that the problems of rough surface, bottom interface damage and load effect of the initial shallow trench in the etching process are solved in a balanced manner; the interface etching performance of the finally formed shallow trench is improved, the electrical performance of the semiconductor structure is optimized, and the application range is wide.

This invention discloses a method for fabricating a photomask using deep silicon etching technology, comprising the following steps: a) pretreatment of a silicon substrate; b) coating a pretreated silicon substrate with photoresist, followed by soft baking, resting, exposure, development, fixing, and post-baking to form the desired pattern on the silicon substrate; c) etching and cleaning the silicon substrate from step b to obtain the photomask. A method for fabricating perovskite array patterns using this photomask is also provided. This invention employs dry etching to fabricate perovskite array patterns, utilizing reactive ion beam etching (RIB) technology. The process is simple, the IIB equipment is simple in structure and inexpensive, and it is compatible with all MEMS-scale manufacturing plants, significantly reducing manufacturing costs. It proposes a new process strategy for perovskite array patterning, reducing side corrosion, improving patterning accuracy, and is suitable for micron-level pattern etching.

The present invention discloses a three-dimensional microstructure etching method based on discrete point iterative analysis of contour evolution, comprising the following steps: first, a mask is plated on the surface of a sample to be etched; a coordinate system is established according to the desired structure of the sample to be etched; for each of the to-be-etched points in the set of to-be-etched points at the current moment #imgabs0#, its unit tangent angle, actual beam incident angle, and actual etching factor are calculated; and the actual etching factor is calculated based on the actual etching factor. d t The method uses a time increment to calculate the coordinates of the next set of etched points at #imgabs2# based on the set of etched points at the current moment #imgabs1#. This iteration is repeated until the set of etched points at the next moment #imgabs3# meets the desired value. The sample to be etched is then placed in a reactive ion beam etching (RIBE) apparatus, and RIB etching is performed on each etched point in sequence based on the actual beam incident angle and etching factor of each etched point. The present invention aims to achieve three-dimensional microstructure etching using a RIB process and improve the manufacturing accuracy of three-dimensional microstructures.

This invention discloses a method for patterning perovskite thin films using reactive ion etching (RIE) technology, comprising the following steps: 1) substrate / substrate cleaning; 2) perovskite film deposition; and 3) reactive ion beam etching of the perovskite thin film. This invention is the first to propose using reactive ion beam etching for perovskite, offering a new process strategy for perovskite array patterning. Furthermore, this dry etching process avoids solvent corrosion of perovskite and is not limited by the type of perovskite, making it applicable to all types of perovskite thin film materials. Compared to the previously proposed template method for perovskite patterning, it is simpler. Secondly, the reactive ion beam etching equipment is simple in structure, inexpensive, and compatible with all MEMS-scale manufacturing plants, significantly reducing manufacturing costs. It is applicable to any substrate material, broadening the compatibility for manufacturing various functional materials.

The invention discloses an etching method of a perovskite thin film, which comprises the following steps of: depositing the perovskite thin film on a substrate / base, and performing reactive ion beam etching on the perovskite thin film; a process gas selected for reactive ion beam etching is a mixed atmosphere comprising tetrafluoromethane, oxygen and argon. According to the method, an uncommon reactive ion etching (RIE) process in perovskite etching is adopted, a process gas is further set to be a mixed atmosphere comprising tetrafluoromethane, oxygen and argon, and mixed plasmas of reactive gas and inert gas are used for etching the perovskite thin film. Wherein fluorine free radicals generated by decomposition of tetrafluoromethane preferentially react with Pb / I bonds in perovskite, oxygen inhibits carbon residues, argon enhances anisotropy, and according to the reactive ion etching process, CF4 / O2 / Ar mixed gas is adopted for etching, the high etching rate (gt, 50 nm / min) of the perovskite thin film and low damage to the thin film can be achieved.

The present application relates to a kind of micro-nano structure manufacturing method, by the improvement of traditional reactive ion beam etching technology, first using colloidal ball self-assembly technology to prepare nanosphere array of periodic structure on the surface of element, then etching colloidal ball using wide-beam ion source, and control process conditions such as working gas pressure, temperature, time, etching power, adjust the duty cycle between colloidal ball.Then using the low-temperature deposition method of film, thin film mask is plated into the gap between colloidal ball, then colloidal ball is removed using matching solution.Finally, using wide-beam ion source etching element, the pattern of thin film mask is transferred to element, and finally micro-nano structure element is obtained.The present application can provide sample for the experimental research or industrial production of high-power laser window.