Microstructure silicon-based material, preparation method thereof and semiconductor device

Abstract

The invention provides a microstructure silicon-based material, a preparation method thereof and a semiconductor device. The preparation method comprises the steps of providing a silicon wafer and microsphere solution; prepraring the microsphere solution into a microsphere template by employing a self-assembly mode; transferring the self-assembly template to the surface of the silicon wafer, and carrying out annealing heat treatment; and etching the silicon wafer by taking microspheres as masks and employing a reaction ion beam etching technology, washing the silicon wafer, and coating film, thereby forming a metal nanocone-shaped microstructure. According to the preparation method provided by the invention, firstly, the microsphere template obtained by employing the self-assembly mode is taken as the mask, and compared with the mask prepared by a special mask preparation technology in the prior art, the mask provided by the invention has the advantages of simple in preparation method and relatively low in cost; and secondly, according to the preparation method provided by the invention, the silicon wafer is etched by employing the relatively cheap reaction ion beam etching technology, and compared with the micro-nano machining methods such as a focusing ion beam etching technology, electron beam lithography and laser direct writing in the prior art, the preparation method has the advantages of simple technology and relatively low cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a microstructured silicon-based material, a manufacturing method thereof, and a semiconductor device. Background technique [0002] At present, according to the types of chip materials, imaging sensors can be roughly divided into visible light imaging sensors based on silicon-based materials and infrared light imaging sensors based on non-silicon-based materials. Silicon-based imaging sensors have the advantages of mature manufacturing process, low cost, simple device structure, can work at room temperature, and strong environmental resistance. At present, silicon-based imaging sensors have been widely used in people's daily life, such as mobile phone cameras, SLR The core imaging elements of the camera are all made of silicon-based CMOS imaging sensors, but the photosensitive area of ​​silicon-based imaging sensors is mainly concentrated in the vis...

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Problems solved by technology

[0006] In view of this, the present invention provides a microstructured silicon-based material, a manufacturing method thereof, and a semiconductor

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