Method for manufacturing transparent flexible capacitor with high quality factor

A high-quality factor, capacitor technology, applied in the direction of laminated capacitors, fixed capacitor electrodes, fixed capacitor parts, etc., can solve the problems of low square resistance, long service life of capacitors, large leakage current of capacitors, etc., and achieve excellent bending performance , long service life and stable performance

Inactive Publication Date: 2019-03-29
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the lack of dangling bonds on its surface, it is impossible to deposit a high-quality high-K dielectric film on its surface by atomic layer deposition technology, which will lead to a large leakage current of the capacitor, which is also not conducive to the preparation of transparent flexible capacitors with high quality factors.
The composite electrode based on silver nanowires usually has a sheet resistance of less than 100 ohms, but the introductio

Method used

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  • Method for manufacturing transparent flexible capacitor with high quality factor
  • Method for manufacturing transparent flexible capacitor with high quality factor
  • Method for manufacturing transparent flexible capacitor with high quality factor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The PS ball with a diameter of 3um is selected, but the diameter of the PS ball is not limited to 3um. The self-assembly feature is used to pave the surface on a 2-inch plastic substrate PET. Subsequently, the ball shrinking process is carried out using reactive ion rapid etching technology to expand the gap between the balls. Then, chromium-gold with a thickness of 80nm is deposited on the PS ball template by thermal evaporation, and then the PS ball template is removed by chemical etching, leaving a nano-network formed by the metal in the gap between the ball and the ball. The prepared metal nanomesh is used as the bottom electrode of the transparent flexible capacitor; at 300℃, 15nm ZrO is grown on the metal nanomesh electrode by atomic layer deposition technology 2 As the dielectric layer of the transparent flexible capacitor; then the metal nano mesh is prepared on the dielectric layer as the top electrode by the same method as described above. Finally, the top elec...

Embodiment 2

[0039] The PS ball with a diameter of 3um is selected, but the diameter of the PS ball is not limited to 3um. The self-assembly feature is used to pave it on a 2-inch plastic substrate PEN. Subsequently, the ball shrinking process is carried out using reactive ion rapid etching technology to expand the gap between the balls. Then use thermal evaporation to deposit 80nm thick chromium gold on the PS ball template, and then use the chemical etching method to remove the PS ball template, leaving the gap between the balls and the metal connected nano mesh, metal nano mesh The preparation process of the shaped electrode is as figure 1 Shown. The prepared metal nano mesh is used as the bottom electrode of transparent flexible capacitor, such as figure 2 Shown; At 300 ℃, using atomic layer deposition technology to grow 15nm ZrO on the metal nano mesh electrode 2 As the dielectric layer of the transparent flexible capacitor; then the metal nano mesh is prepared on the dielectric layer...

Embodiment 3

[0041] A PS ball with a diameter of 950nm is selected, but the diameter of the PS ball is not limited to 950nm. The self-assembly feature is used to pave it on a 2-inch plastic substrate PEN. Subsequently, the ball-shrinking process is carried out using the reactive ion rapid etching technology to expand the gap between the balls. Then, chromium-gold with a thickness of 80nm is deposited on the PS ball template by thermal evaporation, and then the PS ball template is removed by chemical etching, leaving a nano-network formed by the metal in the gap between the ball and the ball. The prepared metal nanomesh is used as the bottom electrode of the transparent flexible capacitor; at 300℃, 15nm ZrO is grown on the metal nanomesh electrode by atomic layer deposition technology 2 As the dielectric layer of the transparent flexible capacitor; then the metal nano mesh is prepared on the dielectric layer as the top electrode using the same method described above. Finally, the top electro...

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Abstract

The invention provides a method for manufacturing a transparent flexible capacitor with a high quality factor. Specific steps include: (1) transferring a PS ball on a plastic flexible substrate; (2) performing retraction ball treatment on a PS ball template obtained in the step (1) by using a reactive ion beam etching technique; (3) depositing metal on the PS ball template in the step (2) by a thermal evaporation process; (4) removing the PS ball template in the step (3), leaving a metal nano-net as a bottom electrode of the transparent flexible capacitor; (5) growing a high-k dielectric material as a dielectric layer on the metal nano-mesh electrode prepared in the step (4); (6) repeating the above steps (1-4), and making the metal nano-net on the dielectric layer as a top electrode of the capacitor; (7) performing photolithography and wet etching on the top electrode, to obtain a transparent flexible capacitor device. The capacitor prepared by the method has good performance in flexibility and transparency, and can be used for transparent flexible electronic devices.

Description

Technical field [0001] The invention belongs to the technical field of transparent flexible capacitors, and specifically relates to a method for preparing a transparent flexible capacitor with a high quality factor. Background technique [0002] Transparent flexible capacitors have a wide range of applications. For example, in the field of transparent flexible displays, as a basic element for charging and discharging in the driving circuit of liquid crystal displays (LCD) and organic light emitting diodes (OLED); in wearable thin film solar cells , As the energy storage element of the transparent window; in the transparent flexible digital integrated circuit, as the basic logic element and so on. But when these devices achieve transparency and flexibility, higher requirements are put forward for the service life, transparency and flexibility of the basic element capacitor. The higher the quality factor of the capacitor (the smaller the loss), the longer its service life. Among ...

Claims

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Application Information

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IPC IPC(8): H01G4/33H01G4/008H01G4/012
CPCH01G4/008H01G4/012H01G4/33
Inventor 郭涛刘昌吴昊
Owner WUHAN UNIV
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