92 results about "Ion beam etching" patented technology

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

The invention discloses a U-shaped groove grating ion beam etching method based on a mask shadow effect, and relates to the technical field of U-shaped groove etching, and the method comprises the steps: placing a substrate with a photoresist grating mask in an inclined manner, and enabling an ion beam to bombard the photoresist grating mask in an inclined incidence manner; through a shadow effect generated by a photoresist grating mask on an ion beam, the etching dose distribution of different areas on the surface of a substrate is regulated and controlled, so that the etching dose of the central area of the groove bottom is greater than that of the areas on the two sides, and the U-shaped groove with a smooth and gradually-changed bottom contour is directly etched and formed. By constructing the smooth transition U-shaped groove bottom structure, sharp edges and corners are thoroughly eliminated, and the phenomenon of electric field concentration is remarkably relieved, so that the damage risk under high-power laser irradiation is effectively reduced, the stability of the grating in an extreme environment is improved, and the service life of the grating in the extreme environment is prolonged.

The invention relates to a reactive ion beam etching method of a large-size diffractive optical element and a vacuum etching machine. The method comprises the following steps: in a reactive ion beam main etching stage, a main ion source emits a high-energy main etching reactive ion beam to scan and etch the whole surface of the large-size diffractive optical element; in a selective area reaction ion beam ashing stage, an auxiliary ion source is controlled to emit a low-energy ashing reaction ion beam, and scanning ashing processing is carried out on a central effective area of the large-size diffractive optical element; in the reaction ion beam edge removal stage, the auxiliary ion source is controlled to emit edge removal reaction ion beams with set process parameters, and edge thickening photoresist of the large-size diffractive optical element is removed; and taking out the large-size diffraction optical element finished product after etching is completed. According to the technical scheme, the production cost of reactive ion beam etching of the large-size diffractive optical element can be reduced, and the production efficiency can be improved.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

The invention relates to the technical field of vacuum etching, in particular to an ion beam etching method and device, a vacuum etching machine, computer equipment and a medium, and the method comprises the steps: obtaining the target geometrical shape and processing demand information of sample etching, and the processing demand information comprises the target etching depth, the incident angle range and the uniformity error information; obtaining target etching process parameters according to the processing demand information; wherein the target etching process parameters comprise a target incident angle, a target working distance and an etching uniformity parameter; planning a movement track of an ion source and / or a sample table according to the target geometrical shape, the target etching process parameters and a movement control function; controlling the ion source and / or the sample table to move according to the movement track in the scanning etching process; according to the technical scheme, high-uniformity etching processing can be realized.

The invention provides a method and equipment for preparing a sub-arc-second gradient substrate through ion beam etching. The method comprises the following steps: determining the relationship between the residence time and the etching depth when an ion beam is used for etching a substrate, so as to form a first model; determining the etching amount distribution of the substrate along the etching path of the ion beam according to the processing target of the substrate; determining the relationship between the speed and the acceleration of the ion beam and the time when the ion beam carries out etching along the etching path, so as to form a second model; determining residence time distribution according to the etching amount distribution and a first model; according to the residence time distribution and a second model, determining speed distribution and acceleration distribution of ion beam etching along time; and controlling the ion beam to etch the etching path according to the speed distribution and the acceleration distribution. According to the method, the processing formula of ion beam etching is formed through the speed distribution and the acceleration distribution, the target etching depth can be obtained through the residence time, and reliable processing of the sub-arc-second gradient substrate is realized.

The utility model provides an IBE ion beam etching device convenient to maintain, which comprises a cavity body, a target material is connected in the cavity body, a carrying table mechanism is arranged above the target material, the carrying table mechanism is connected with the cavity body through a rotary driving mechanism, a wafer substrate to be coated is arranged on the carrying table mechanism, one side of the cavity body is connected with a first access door, and the other side of the cavity body is connected with a second access door. The other side of the cavity body is connected with a second access door and located on the opposite side of the first access door, the first access door and the second access door are both hinged to the cavity body through hinges, a first installation opening is formed in the lower portion of the first access door, the first ion source is connected with the first installation opening, and a second installation opening is formed in the upper portion of the second access door. The second ion source is connected with the second mounting port, and when the first ion source or the second ion source breaks down, maintenance is carried out by opening the corresponding first access door or second access door; and by arranging the first access door and the second access door, the maintenance efficiency is greatly improved, and the maintenance is very convenient.

This invention provides an apparatus and method for controlling the thickness of flexible thin film coatings using ion beam etching. The apparatus includes a coating unit, an online thickness detection unit, an ion beam etching unit, and a control unit, the first three being connected sequentially. The control unit is connected to all the aforementioned units. The ion beam etching unit includes an ion source, an accelerating electrode, and a stage. The flexible thin film passes sequentially through the coating unit, the online thickness detection unit, and the ion beam etching unit, undergoing etching between the accelerating electrode and the stage in the ion beam etching unit. This invention integrates ion beam etching technology into roll-to-roll coating processes. By selecting the structure of the ion beam etching unit and the ion beam etching parameters, the thickness of the coating on the flexible thin film can be precisely controlled, achieving coating thinning, improving the uniformity of film thickness, and increasing product yield. The apparatus has a simple structure, is easy to operate, reduces product scrap, lowers production costs, and has a wide range of applications.

This application provides a semiconductor structure and a method for trimming the same. A first structure to be trimmed is provided. The first structure to be trimmed includes a substrate layer, a first film layer, and a second film layer stacked sequentially. The second film layer includes multiple line structures, each with a first roughness. A third film layer is deposited on the first structure to be trimmed to obtain the second structure to be trimmed. The second structure to be trimmed is then subjected to ion beam etching to obtain a trimmed structure. In the trimmed structure, the line structures in the second film layer have a smaller second roughness. In this application, the deposited third film layer has different thicknesses at different locations. The first thickness of the third film layer on the top surface of the second film layer is greater than its second thickness on the side surface of the second film layer. This difference in thickness is used to compensate for differences in the etching rate of the second film layer. While improving the linewidth roughness or line edge roughness, this method ensures that the top of the second film layer is not excessively etched away, reducing top loss.

The invention relates to an ion beam etching device suitable for a large-size wafer and a vacuum etching machine. Comprising a vacuum cavity, an ion source arranged on the vacuum cavity, a sample carrying table and a gas injection device arranged in the vacuum cavity, wherein the ion source is used for outputting an ion beam, and the sample carrying table is used for carrying a large-size wafer; the gas injection device is arranged in a partitioned manner corresponding to the bearing area of the sample carrying table; the gas injection devices are respectively connected to a gas source through a gas mass flow valve; the gas source comprises inert gas and / or reactive gas; the gas mass flow valve is connected to a mass flow controller; the mass flow controller is used for carrying out independent flow regulation on the inert gas and / or reactive gas jetted in the gas jetting device of each partition according to flow control parameters, and dynamically regulating the atmosphere concentration on the surface of the large-size wafer so as to finely adjust the reaction rate; according to the technical scheme, the rate difference of different areas of the wafer can be compensated, and the etching uniformity of the large-size wafer is improved.

The invention discloses lithium niobate with high anisotropy and a smooth side wall and a preparation method of the lithium niobate, and belongs to the technical field of semiconductor processes. The preparation method comprises the following steps: by adopting typical reaction etching, the advantage of higher selectivity during reaction ion beam etching is reserved; adding a sacrificial mask SOH to isolate the top and sidewalls of the lithium niobate layer having the initial tapered profile; by increasing the thickness of the top metal hard mask, the mask budget of the top metal hard mask in subsequent etching is improved; and finally, etching the side wall comprising the redeposition layer and the conical lithium niobate structure with the metal seeds by adopting an ion beam, and finally cooperatively realizing a vertical side wall shape and a smooth side wall surface through zero-angle etching treatment, so as to obtain the lithium niobate with high anisotropy and a smooth side wall. According to the method, the separation of the top area and the side wall area of the lithium niobate is realized, the side wall roughness problem after the heavy deposition layer is removed is repaired, and the lithium niobate with high anisotropy and smooth side wall is obtained.

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps: forming a composite dielectric layer on a semiconductor substrate; etching the dielectric layer and the semiconductor substrate until a deep groove is formed, wherein the side wall of the deep groove is provided with a plurality of sharp corners and concave parts which are alternately arranged; an ion beam etching process is adopted, the incidence angle of etching ions is adjusted, so that the etching ions act on different areas of the side wall of the deep groove respectively, part of or all the sharp corners are removed, and the average distance between the sharp corners of the side wall of the deep groove and the concave part is decreased; and removing the composite dielectric layer. According to the method, the breakdown voltage of the deep groove silicon capacitor can be uniformly distributed, and the reliability of the device is improved.

The invention provides a method for controlling the morphology of dry etching, and the method comprises the steps: (1) depositing at least one film layer to be etched on the surface of a substrate wafer, then carrying out the spin coating of a photoresist mask, carrying out the exposure and development processing, completing the patterning of the photoresist mask, and obtaining a wafer to be etched; (2) fixing a wafer to be etched on a carrying table, and then carrying out ion beam etching with preset energy and preset angle to obtain grooves with holes with different angles, different depths and different sizes; the preset angle is realized by controlling the incident angle of at least one ion beam and / or the inclination angle of the carrying platform. According to the invention, ion beam etching is carried out based on the patterned photoresist mask to form the etching area, and grating structures with different depths, different sizes and different angles are formed in different etching areas by controlling the energy, the angle and the like of the ion beam, so that etching morphology control is realized; and the method is of great significance to periodic arrangement of different depths and different angles on some optical devices.

The invention relates to the technical field of semiconductor micro display, and discloses a micro display screen lens assembly based on dynamic refractive index regulation and control, which comprises a flat layer, a substrate lens layer, a dynamic regulation and control layer and a nanostructure enhancement layer which are arranged above a pixel layer, wherein the substrate lens layer is manufactured into a micro-lens array through photoetching and ion beam etching; the dynamic regulation and control layer is a reversible phase change alloy film, and real-time switching of the refractive index between 1.6 and 2.5 can be achieved through pulse current or laser; the nano-structure enhancement layer is a periodic nano-column array made of the same material as the dynamic regulation and control layer, and the interaction between light and substances is enhanced. Through the synergistic effect of the reversible phase change material and the nano structure, the problems that a traditional lens is low in transmittance, large in aberration and difficult to dynamically regulate and control under large-angle incident light are solved, and the lens has the advantages of being high in large-angle light transmittance, high in response speed, compatible with a semiconductor technology, capable of reducing display power consumption and the like and is suitable for AR / VR and other high-speed display scenes.

The utility model provides a cooling device for ion beam etching of a wafer, which comprises a mounting rack, a cooling mechanism for cooling the wafer, and a control module arranged on the cooling mechanism, the positioning rods are arranged on the mounting frame and used for positioning the wafers, the limiting mechanism is arranged on at least one positioning rod, and the rotating mechanism is arranged between the mounting frame and the cooling mechanism. According to the utility model, helium can enter a space formed by the material placing table and the rotating plate in a uniformly distributed manner through the arrangement of the shunt pipe, so that the temperature of the material placing table is uniformly distributed, and the temperature generated on the back surface of a wafer is uniformly and quickly taken away, thereby ensuring that the wafer is kept at a stable temperature in a high-precision processing process such as ion beam etching and the like; and secondly, cooling is achieved through helium, the helium serves as inert gas and is environmentally friendly, meanwhile, the heat conduction performance of the helium is excellent, the cooling process is more efficient, and therefore energy consumption is reduced.

The invention belongs to the technical field of semiconductors, and particularly relates to an optical waveguide composite film and a preparation method thereof.The optical waveguide composite film comprises a substrate layer, an isolation layer, a waveguide composite body and a film layer which are stacked from bottom to top; wherein the waveguide complex comprises a silicon waveguide and a filling structure filled in the surrounding area of the silicon waveguide, the upper surface of the silicon waveguide and the upper surface of the filling structure are coplanar, and the silicon waveguide is seamlessly attached to the filling structure. According to the preparation method of the optical waveguide composite film, through surface treatment of polishing and ion beam etching, the upper surface of a silicon waveguide of a waveguide composite body is coplanar with the upper surface of a filling structure, the silicon waveguide is seamlessly attached to the filling structure, direct and stable bonding of the waveguide composite body and functional materials such as lithium niobate is achieved, the bonding strength is high, the film is not prone to falling off and breaking, and the service life of the film is prolonged. The yield is high.

This application discloses a wafer-level pattern modification method and an ion beam etching apparatus, applicable to the semiconductor manufacturing field. In this method, a target ion beam voltage is first determined based on the hardness grade of the material to be etched on the wafer surface. An initial pattern is formed on the wafer surface by the material to be etched. Then, based on a first ion beam incident angle and the target ion beam voltage, the initial pattern is modified on one side in a first direction using the ion beam to obtain a first modified pattern. Therefore, only one photolithography step is needed before ion beam etching to form the initial pattern, avoiding low product yield caused by overlay errors. Through ion beam etching, the initial pattern formed by the material to be etched on the wafer surface can be modified on one side in a highly controllable manner in a first direction parallel to the wafer surface, reducing the distance between adjacent patterns and improving the success rate of forming the first modified pattern, thus increasing the yield of products requiring small CD patterns.

An embodiment of the present invention increases the etching resistance of a photoresist in an EUV PR / SiON pattern using an ion beam etching apparatus to which grid pulsing is applied, so that the photoresist is etched less and SiON is etched more, thereby improving the etching selectivity. According to an embodiment of the present invention, it is possible to improve the LER through repetition of constant etching and deposition, thereby reducing process defects and enabling damage control.

This invention provides a method for simulating the morphological evolution of blazed grating etching, including: pre-constructing an etching mask structure based on a pre-defined blazed grating structure; determining etching contour lines at different times and positions based on the morphological evolution of the mask structure during etching, and determining the motion properties of different contour lines; determining the linear equation of each contour line and the motion mode of each contour line; determining the motion direction of each contour line in combination with different etching processes; and determining and updating the position and linear equation of each contour line at different etching times based on the motion direction and motion rate of each contour line; and judging the simulated etching endpoint of the blazed grating etching morphology based on different etching processes. This invention can more accurately describe the influence of different processes and process parameters on the final etching result, perform in-depth processing of discrete technical data, and thus predict and control the ion beam etching process.

A method and a device for the in-situ structured deposition of three-dimensional micro- and / or nanostructures (20) on a substrate (30) by means of ion beam etching through a mask (50) are described, wherein the method (100) comprises: providing the mask (50), which comprises a first layer (51) with at least one channel (60) in which material (62) to be removed is arranged, or at least two layers (51, 52), wherein the first layer (51) comprises at least one channel (60) in which material (62) to be removed is arranged, and a second layer (52) which spans the first layer (51) in the form of a perforated membrane (70); arranging the mask (50) above a substrate (30) to be coated; arranging the mask (50) with the substrate (30) to be coated in an ion beam etching system (40);subsequent creation of a vacuum in the ion beam etching system (40) to cause the ion beam to penetrate the at least one channel (60) under vacuum and for the material physically removed by the ion beam to strike the substrate (30) as coating material (62).

The invention discloses an NIFE etching method which is used for an MEMS, and the execution of ion beam etching comprises the following steps: executing ion beam bombardment for a first time length from a first direction at a first angle; executing first-duration ion beam bombardment along a second direction at a second angle; executing second-duration ion beam bombardment along a second direction at a third angle; executing second-time ion beam bombardment along the second direction at a fourth angle; wherein the first angle, the second angle, the third angle and the fourth angle are different, the first duration is longer than the second duration, and the first direction is opposite to the second direction. After original 90-degree / 270-degree main etching, bombardment at two symmetrical angles of 180 degrees / 360 degrees is added, polymers on the side wall in the X direction are thoroughly removed through oblique ion beam physical sputtering, a follow-up acid corrosion path is blocked, generation of corrosive components in NIFE etching can be avoided, noise in the X direction is reduced, and the yield is increased.

The invention provides a planarization method of a semiconductor structure. Preliminary leveling can be carried out on the surface undulation, namely the first height difference, of a film layer through a first ion beam etching process. A second ion beam etching process is utilized, and by means of film layers, structures and density differences, new surface undulation differences and height differences are created among different areas of a second semiconductor structure again, namely, more obvious protrusions and recesses are formed on the surface, so that a height difference window is provided for leveling in a global range, and the flatness of the second semiconductor structure is improved. And performing trimming treatment again by using a third ion beam etching process to realize global planarization, namely, considering the flatness of the pattern surface in a local region and the flatness between different regions in a global range, so that the surface of the semiconductor structure has no obvious height difference. Through the ion beam etching technology, the surface difference of the film layers at different positions of the semiconductor structure can be controlled, and the surface fluctuation degree and fluctuation frequency are reduced, so that the height difference of the film layers at different positions is eliminated, and global planarization is realized.

The invention provides a planarization method of a semiconductor structure. A first semiconductor structure is provided; the first semiconductor structure comprises a first region and a second region which are arranged along a target direction, the target direction is perpendicular to the direction of the substrate pointing to the first film layer, and a first height difference exists between the surface of the second film layer in the first region and the surface of the second film layer in the second region; performing planarization processing on the second film layer by using an ion beam etching process to obtain a second semiconductor structure; the surface flatness of the second semiconductor structure meets the flatness requirement, and the second height difference is smaller than the first height difference. By utilizing the characteristic of collimation in the direction of the ion beam, a convex fluctuation area of the second film layer can be directly smoothed, meanwhile, a sputtering product falls back into a concave area, and directional removal of fluctuation on the surface of the second film layer is realized by utilizing a peak clipping and valley filling mode, so that the flatness of the surface of the semiconductor structure is improved, and the yield of the semiconductor structure is improved. And global planarization on the whole semiconductor structure is realized.

The application provides a kind of grating-like structure metal electrode manufacturing method and electrode, first particle beam is emitted with IBE ion beam etching equipment to first angle under the shelter of mask etching metal layer to obtain rough grating-like structure metal electrode, second particle beam is emitted with IBE ion beam etching equipment to second angle under the shelter of mask etching rough grating-like structure metal electrode to obtain final grating-like structure metal electrode. That is, first etching with small angle can be used to preliminarily open metal layer to obtain rough grating-like structure metal electrode, then large angle is used to modify the top of metal layer by using the shelter of mask, when the mask is gradually consumed, particle beam can be gradually etched to the bottom of metal layer. In this way, the side wall metal dirt generated by small angle etching can be effectively removed, and at the same time, the metal side wall with special angle can be formed due to the time difference between the top and bottom of metal layer, so that the final grating-like structure metal electrode with regular appearance and low roughness is obtained.

The present disclosure relates to a mass leveling system and method for a hemispherical resonator, the system comprising: an excitation module for exciting the hemispherical resonator to be leveled to generate vibration; a laser interferometer comprising at least two detection probes for collecting vibration information of at least two positions of the hemispherical resonator; an ion beam etching module for etching the hemispherical resonator using an ion beam; and a control module for determining the orientation of the vibration principal axis of the hemispherical resonator and the size of frequency splitting according to the vibration information of the at least two positions of the hemispherical resonator in the vibration decay process; and controlling the ion beam etching module to etch the hemispherical resonator using the ion beam according to the orientation of the vibration principal axis of the hemispherical resonator and the size of frequency splitting, so as to realize mass leveling of the hemispherical resonator. Thus, mass leveling with higher precision and high automation can be realized without reducing the quality factor of the hemispherical resonator.

A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is formed on the first electrode layer. A patterned second electrode layer is formed on the MTJ stack layer and used as a mask. A first ion beam etching process is performed to etch the patterned second electrode layer and pattern the MTJ stack layer and the first electrode layer to form a second electrode, an MTJ stack structure, and a first electrode. A first protective layer is formed to cover the second electrode and the MTJ stack structure. A second ion beam etching process is performed to remove a portion of the MTJ stack structure and a portion of the first electrode.

The application discloses a lower electrode assembly and an ion beam etching machine, and the lower electrode assembly comprises a plurality of pressing rings (1), an electrode plate (2) and a fixing ring (5). The plurality of pressing rings (1) are arranged above the electrode plate (2) in a circumferential interval, each pressing ring (1) is arranged on the fixing ring (5) through a rotatable push rod (3) arranged correspondingly, and an end of the pressing ring (1) forms a pressing part matched with a wafer to be processed. The pressing ring (1) can be driven to rotate by the rotatable push rod (3) so as to adjust the radial distance of the pressing part relative to the center of rotation of the lower electrode. By the application, the phenomenon that a manipulator collides with the pressing ring during transmission can be prevented; the contact area with the wafer is reduced by using the pressing edge at the vertex of each pressing ring, the yield of wafer etching can be effectively improved; meanwhile, the pressing adaptation of wafers of different sizes can be adapted, the application has good adaptability, the operation time can be effectively reduced on the basis of reducing the cost.

The application discloses an AlN ultrasonic sensor, a preparation method and application thereof, and the preparation method comprises the following steps: firstly, polishing a substrate by using sandpaper to obtain a rough surface, and then cleaning the substrate by using an ion beam etching method to obtain a pretreated substrate; secondly, using a magnetron sputtering method, the oxygen content in the cavity is 1.26*10 ‑3 Pa~1.89*10 ‑3 Pa when starting deposition, adjusting deposition parameters to form an AlON amorphous coating and an AlN piezoelectric coating on the surface of the pretreated substrate in sequence, wherein the parameters comprise at least one of an axial distance, a target base distance, a radio frequency power, an environment temperature, a cavity pressure, an Ar / N2 flow ratio and a deposition time; and thirdly, preparing an electrode layer on the surface of the AlN piezoelectric coating to obtain the AlN ultrasonic sensor. The axial distance and the target base distance are jointly adjusted to obtain piezoelectric coatings grown in different directions, so that the energy proportion of the longitudinal wave and the transverse wave is adjusted, and the signal amplitude of the longitudinal wave and the transverse wave can also be adjusted by adjusting other process parameters.

1. The name of the design product: ion beam etching equipment. 2. The use of the design product: used for etching workpieces with ion beams. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view 1.

The invention relates to a hemispherical harmonic oscillator mass imbalance trimming device and method, and the device comprises a vacuum chamber which is internally provided with a trimming station; the clamping unit comprises a rotary table and a plurality of clamping mechanisms, the rotary table can rotate around the first axis, the multiple clamping mechanisms are distributed in the circumferential direction of the first axis at intervals, and the clamping mechanisms clamp the harmonic oscillator and drive the harmonic oscillator to rotate around the sensitive shaft; an ion beam etching unit; the clamping mechanisms are connected with a shielding assembly, when the rotary table rotates, the multiple clamping mechanisms sequentially pass through the trimming station, the shielding assembly covers the clamped harmonic oscillator, the shielding assembly is provided with a trimming hole for an ion beam to pass through, and the ion beam emitted by the ion beam etching unit penetrates through the trimming hole in the shielding assembly located in the trimming station. And the light is emitted to the lip edge of the harmonic oscillator. According to the invention, the shielding assembly is arranged, so that the condition that the ion beam is sputtered to other harmonic oscillators which are not trimmed or trimmed to cause accidental damage can be avoided, and deep optimization of harmonic oscillator batch unbalance processing is realized.