137 results about "Ion beam etching" patented technology

The invention relates to a waveguide grating, in particular to a method for manufacturing a waveguide grating with continuous gradually-changing groove depth, which comprises the following steps of: accurately measuring and calibrating ion beam current density distribution of a used ion beam in a working plane; establishing a cooperative control model associated with a target groove depth curve, ion beam current density distribution and scanning speed, associating the etching depth with the ion beam total dose, and accurately controlling the ion beam total dose received by each point on the waveguide grating by dynamically regulating and controlling the scanning speed of the substrate relative to the ion beam, so as to realize accurate control of the etching depth. The accurate control on the groove depth distribution is realized; based on the cooperative control model, the scanning speed corresponding to the target groove depth curve is solved by combining the set target groove depth curve and the calibrated ion beam current density distribution; and performing ion beam etching based on the solved scanning speed, and finally forming a continuous gradual change groove depth accurately corresponding to the target groove depth curve on the waveguide grating. The method can effectively overcome the defect that the high-precision waveguide grating with the continuous gradually-changing groove depth is difficult to manufacture.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

The invention discloses a U-shaped groove grating ion beam etching method based on a mask shadow effect, and relates to the technical field of U-shaped groove etching, and the method comprises the steps: placing a substrate with a photoresist grating mask in an inclined manner, and enabling an ion beam to bombard the photoresist grating mask in an inclined incidence manner; through a shadow effect generated by a photoresist grating mask on an ion beam, the etching dose distribution of different areas on the surface of a substrate is regulated and controlled, so that the etching dose of the central area of the groove bottom is greater than that of the areas on the two sides, and the U-shaped groove with a smooth and gradually-changed bottom contour is directly etched and formed. By constructing the smooth transition U-shaped groove bottom structure, sharp edges and corners are thoroughly eliminated, and the phenomenon of electric field concentration is remarkably relieved, so that the damage risk under high-power laser irradiation is effectively reduced, the stability of the grating in an extreme environment is improved, and the service life of the grating in the extreme environment is prolonged.

The utility model provides a rotating shaft device of a wafer carrying table of an ion beam etching machine, which comprises a carrying table plate, a rotating arm is fixedly arranged on the carrying table plate, the rotating arm is used for being connected with an external rotation driving structure, an output end of a first servo motor is connected with a speed reducer, magnetic fluid is fixed on a connecting sleeve, and the magnetic fluid is connected with a second servo motor. One end of a shaft sleeved with the magnetic fluid penetrates through one side wall of an etching chamber of the ion beam etching machine to be connected with the carrying table plate, the end, away from the etching chamber of the ion beam etching machine, of the connecting sleeve is fixedly connected with a mounting frame in a sleeved mode, and the other end of the shaft sleeved with the magnetic fluid is sequentially connected with the speed reducer and the mounting frame in a sleeved mode. A stop block set is arranged at the end of the shaft sleeved with the magnetic fluid and far away from the etching chamber of the ion beam etching machine, a plurality of buffer devices are arranged on the same side of the mounting frame and stop blocks, and the rotation angle of the shaft sleeved with the magnetic fluid is limited through cooperation of the buffer devices and the stop blocks. Therefore, the rotation angle of the carrying table plate is limited in an auxiliary mode.

The invention relates to a reactive ion beam etching method of a large-size diffractive optical element and a vacuum etching machine. The method comprises the following steps: in a reactive ion beam main etching stage, a main ion source emits a high-energy main etching reactive ion beam to scan and etch the whole surface of the large-size diffractive optical element; in a selective area reaction ion beam ashing stage, an auxiliary ion source is controlled to emit a low-energy ashing reaction ion beam, and scanning ashing processing is carried out on a central effective area of the large-size diffractive optical element; in the reaction ion beam edge removal stage, the auxiliary ion source is controlled to emit edge removal reaction ion beams with set process parameters, and edge thickening photoresist of the large-size diffractive optical element is removed; and taking out the large-size diffraction optical element finished product after etching is completed. According to the technical scheme, the production cost of reactive ion beam etching of the large-size diffractive optical element can be reduced, and the production efficiency can be improved.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

The utility model provides a wafer carrying table device of an ion beam etching machine, which comprises a carrying table plate, a sealing box is arranged at the lower part of the carrying table plate, a rotary driving assembly and a wafer lifting assembly are arranged in a space between the carrying table plate and the sealing box, the output end of the rotary driving assembly penetrates through an ejector pin compression ring connecting plate and is connected with a transition plate, and the output end of the wafer lifting assembly is connected with the ejector pin compression ring connecting plate. A carrier table water cooling plate and a carrier table water cooling plate sealing plate are arranged between the transition plate and the wafer carrier table, the carrier table water cooling plate is arranged at the lower part of the carrier table water cooling plate sealing plate, the lower surface of the carrier table water cooling plate is provided with a first air flow channel, the upper surface of the carrier table water cooling plate sealing plate is provided with a second air flow channel, and the first air flow channel is communicated with the second air flow channel. The first airflow channel and the second airflow channel are fixedly connected to form a complete airflow channel for low-temperature gas to pass through, a plurality of auxiliary airflow channels are also arranged at the wafer carrying table, one end of each auxiliary airflow channel is communicated with the first airflow channel, and the other end of each auxiliary airflow channel is directly positioned at the lower part of the wafer, so that the cooling effect of the wafer is better.

The invention relates to a micro-convex structure optical fiber image transmission array and a preparation method and application thereof. The method comprises the following steps: drawing a core material glass rod and a skin material glass tube into a primary monofilament; drawing the black absorption glass rod into a light absorption glass gap wire; drawing the skin glass rod into a skin glass gap wire; performing hexagonal densest arrangement on the primary monofilaments, sequentially inserting light absorption glass gap filaments and skin glass gap filaments into gaps of the primary monofilaments to obtain a primary composite rod, and drawing the primary composite rod into primary multifilaments; arranging the primary multifilaments in a hexagonal densest manner to form a secondary composite rod, and drawing the secondary composite rod into secondary multifilaments; performing hexagonal densest arrangement on the secondary multifilaments, performing fixed-length cutting, arranging the secondary multifilaments into plate sections, and performing hot melt pressing on the plate sections to form molten fiber rods; post-processing the fused fiber rod into an optical fiber image transmitting array; and carrying out ion beam etching on the optical fiber image transmission array in vacuum. According to the method, the convex structure on the surface of the output end of the optical fiber image transmitting array is prepared by using an ion beam bombardment etching process, and the uniformity of surface etching processing of the convex structure is improved.

The invention relates to the technical field of vacuum etching, in particular to an ion beam etching method and device, a vacuum etching machine, computer equipment and a medium, and the method comprises the steps: obtaining the target geometrical shape and processing demand information of sample etching, and the processing demand information comprises the target etching depth, the incident angle range and the uniformity error information; obtaining target etching process parameters according to the processing demand information; wherein the target etching process parameters comprise a target incident angle, a target working distance and an etching uniformity parameter; planning a movement track of an ion source and / or a sample table according to the target geometrical shape, the target etching process parameters and a movement control function; controlling the ion source and / or the sample table to move according to the movement track in the scanning etching process; according to the technical scheme, high-uniformity etching processing can be realized.

The invention provides a method and equipment for preparing a sub-arc-second gradient substrate through ion beam etching. The method comprises the following steps: determining the relationship between the residence time and the etching depth when an ion beam is used for etching a substrate, so as to form a first model; determining the etching amount distribution of the substrate along the etching path of the ion beam according to the processing target of the substrate; determining the relationship between the speed and the acceleration of the ion beam and the time when the ion beam carries out etching along the etching path, so as to form a second model; determining residence time distribution according to the etching amount distribution and a first model; according to the residence time distribution and a second model, determining speed distribution and acceleration distribution of ion beam etching along time; and controlling the ion beam to etch the etching path according to the speed distribution and the acceleration distribution. According to the method, the processing formula of ion beam etching is formed through the speed distribution and the acceleration distribution, the target etching depth can be obtained through the residence time, and reliable processing of the sub-arc-second gradient substrate is realized.

The utility model provides an IBE ion beam etching device convenient to maintain, which comprises a cavity body, a target material is connected in the cavity body, a carrying table mechanism is arranged above the target material, the carrying table mechanism is connected with the cavity body through a rotary driving mechanism, a wafer substrate to be coated is arranged on the carrying table mechanism, one side of the cavity body is connected with a first access door, and the other side of the cavity body is connected with a second access door. The other side of the cavity body is connected with a second access door and located on the opposite side of the first access door, the first access door and the second access door are both hinged to the cavity body through hinges, a first installation opening is formed in the lower portion of the first access door, the first ion source is connected with the first installation opening, and a second installation opening is formed in the upper portion of the second access door. The second ion source is connected with the second mounting port, and when the first ion source or the second ion source breaks down, maintenance is carried out by opening the corresponding first access door or second access door; and by arranging the first access door and the second access door, the maintenance efficiency is greatly improved, and the maintenance is very convenient.

This invention provides an apparatus and method for controlling the thickness of flexible thin film coatings using ion beam etching. The apparatus includes a coating unit, an online thickness detection unit, an ion beam etching unit, and a control unit, the first three being connected sequentially. The control unit is connected to all the aforementioned units. The ion beam etching unit includes an ion source, an accelerating electrode, and a stage. The flexible thin film passes sequentially through the coating unit, the online thickness detection unit, and the ion beam etching unit, undergoing etching between the accelerating electrode and the stage in the ion beam etching unit. This invention integrates ion beam etching technology into roll-to-roll coating processes. By selecting the structure of the ion beam etching unit and the ion beam etching parameters, the thickness of the coating on the flexible thin film can be precisely controlled, achieving coating thinning, improving the uniformity of film thickness, and increasing product yield. The apparatus has a simple structure, is easy to operate, reduces product scrap, lowers production costs, and has a wide range of applications.

The invention belongs to the technical field of semiconductor processing, and particularly relates to a low-angle morphology ion beam etching method and application. Depositing a metal film to be etched on the surface of the wafer, then spin-coating a photoresist mask and carrying out exposure and development treatment to complete patterning of the photoresist mask; carrying out high-temperature hardening treatment, and enabling the photoresist mask to generate hot reflux through high temperature so as to reduce the angle of the photoresist mask; and obtaining the sidewall angle of the hardened photoresist mask, adjusting the ion beam etching incident angle, enabling the ion beam incident angle to be complementary with the sidewall angle of the photoresist mask, and carrying out etching until the etching is completed. According to the method, the steepness of the side wall of the ion beam etching groove can be controlled within 50 degrees, side wall deposition is avoided, and the reliability between metal layers of the multi-layer wiring process can be greatly improved.

The present invention relates to the field of micro-nano optics, and discloses a method for processing a micro-nano optical array structure, comprising the following steps: Step 1, processing a plurality of openings on the surface of a hydrophobic flat plate; Step 2, placing the hydrophobic flat plate above a photoresist and bringing it into contact with the photoresist, and using the capillary phenomenon of the openings to form a spherical protrusion at each position corresponding to the openings on the surface of the photoresist; Step 3, curing the photoresist; Step 4, after the curing is completed, removing the hydrophobic flat plate; Step 5, performing an ion beam etching treatment using the photoresist. Compared with the traditional ultra-precision cutting processing method, the method for processing a micro-nano optical array structure provided by the present invention has a lower cost and a shorter processing time.

This application provides a semiconductor structure and a method for trimming the same. A first structure to be trimmed is provided. The first structure to be trimmed includes a substrate layer, a first film layer, and a second film layer stacked sequentially. The second film layer includes multiple line structures, each with a first roughness. A third film layer is deposited on the first structure to be trimmed to obtain the second structure to be trimmed. The second structure to be trimmed is then subjected to ion beam etching to obtain a trimmed structure. In the trimmed structure, the line structures in the second film layer have a smaller second roughness. In this application, the deposited third film layer has different thicknesses at different locations. The first thickness of the third film layer on the top surface of the second film layer is greater than its second thickness on the side surface of the second film layer. This difference in thickness is used to compensate for differences in the etching rate of the second film layer. While improving the linewidth roughness or line edge roughness, this method ensures that the top of the second film layer is not excessively etched away, reducing top loss.

The invention relates to an ion beam etching device suitable for a large-size wafer and a vacuum etching machine. Comprising a vacuum cavity, an ion source arranged on the vacuum cavity, a sample carrying table and a gas injection device arranged in the vacuum cavity, wherein the ion source is used for outputting an ion beam, and the sample carrying table is used for carrying a large-size wafer; the gas injection device is arranged in a partitioned manner corresponding to the bearing area of the sample carrying table; the gas injection devices are respectively connected to a gas source through a gas mass flow valve; the gas source comprises inert gas and / or reactive gas; the gas mass flow valve is connected to a mass flow controller; the mass flow controller is used for carrying out independent flow regulation on the inert gas and / or reactive gas jetted in the gas jetting device of each partition according to flow control parameters, and dynamically regulating the atmosphere concentration on the surface of the large-size wafer so as to finely adjust the reaction rate; according to the technical scheme, the rate difference of different areas of the wafer can be compensated, and the etching uniformity of the large-size wafer is improved.

The invention discloses lithium niobate with high anisotropy and a smooth side wall and a preparation method of the lithium niobate, and belongs to the technical field of semiconductor processes. The preparation method comprises the following steps: by adopting typical reaction etching, the advantage of higher selectivity during reaction ion beam etching is reserved; adding a sacrificial mask SOH to isolate the top and sidewalls of the lithium niobate layer having the initial tapered profile; by increasing the thickness of the top metal hard mask, the mask budget of the top metal hard mask in subsequent etching is improved; and finally, etching the side wall comprising the redeposition layer and the conical lithium niobate structure with the metal seeds by adopting an ion beam, and finally cooperatively realizing a vertical side wall shape and a smooth side wall surface through zero-angle etching treatment, so as to obtain the lithium niobate with high anisotropy and a smooth side wall. According to the method, the separation of the top area and the side wall area of the lithium niobate is realized, the side wall roughness problem after the heavy deposition layer is removed is repaired, and the lithium niobate with high anisotropy and smooth side wall is obtained.

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps: forming a composite dielectric layer on a semiconductor substrate; etching the dielectric layer and the semiconductor substrate until a deep groove is formed, wherein the side wall of the deep groove is provided with a plurality of sharp corners and concave parts which are alternately arranged; an ion beam etching process is adopted, the incidence angle of etching ions is adjusted, so that the etching ions act on different areas of the side wall of the deep groove respectively, part of or all the sharp corners are removed, and the average distance between the sharp corners of the side wall of the deep groove and the concave part is decreased; and removing the composite dielectric layer. According to the method, the breakdown voltage of the deep groove silicon capacitor can be uniformly distributed, and the reliability of the device is improved.

The invention provides a method for controlling the morphology of dry etching, and the method comprises the steps: (1) depositing at least one film layer to be etched on the surface of a substrate wafer, then carrying out the spin coating of a photoresist mask, carrying out the exposure and development processing, completing the patterning of the photoresist mask, and obtaining a wafer to be etched; (2) fixing a wafer to be etched on a carrying table, and then carrying out ion beam etching with preset energy and preset angle to obtain grooves with holes with different angles, different depths and different sizes; the preset angle is realized by controlling the incident angle of at least one ion beam and / or the inclination angle of the carrying platform. According to the invention, ion beam etching is carried out based on the patterned photoresist mask to form the etching area, and grating structures with different depths, different sizes and different angles are formed in different etching areas by controlling the energy, the angle and the like of the ion beam, so that etching morphology control is realized; and the method is of great significance to periodic arrangement of different depths and different angles on some optical devices.

The present invention provides a micro-nano processing system comprising: a sealed chemical reagent unit, a sealed UV exposure unit, an etching unit, and a gas purification unit; wherein the sealed chemical reagent unit, the sealed UV exposure unit, and the etching unit are connected via a sample transfer channel; the gas purification unit is airtightly connected to the sealed chemical reagent unit, the sealed UV exposure unit, and the etching unit via a gas circulation channel, so that the micro-nano processing system forms a gas circulation loop; the etching unit includes an ion beam etching preparation unit and an ion beam etching unit, which are sealed and connected via a vacuum gate valve; the micro-nano processing system also includes a sample inlet and outlet pipe for samples to enter and exit the micro-nano processing system. The micro-nano processing system of the present invention is cost-effective, easy to maintain, and simple to operate, and is particularly suitable for micro-nano processing of materials sensitive to oxygen and water vapor.

The invention relates to the technical field of semiconductor micro display, and discloses a micro display screen lens assembly based on dynamic refractive index regulation and control, which comprises a flat layer, a substrate lens layer, a dynamic regulation and control layer and a nanostructure enhancement layer which are arranged above a pixel layer, wherein the substrate lens layer is manufactured into a micro-lens array through photoetching and ion beam etching; the dynamic regulation and control layer is a reversible phase change alloy film, and real-time switching of the refractive index between 1.6 and 2.5 can be achieved through pulse current or laser; the nano-structure enhancement layer is a periodic nano-column array made of the same material as the dynamic regulation and control layer, and the interaction between light and substances is enhanced. Through the synergistic effect of the reversible phase change material and the nano structure, the problems that a traditional lens is low in transmittance, large in aberration and difficult to dynamically regulate and control under large-angle incident light are solved, and the lens has the advantages of being high in large-angle light transmittance, high in response speed, compatible with a semiconductor technology, capable of reducing display power consumption and the like and is suitable for AR / VR and other high-speed display scenes.

The utility model provides a cooling device for ion beam etching of a wafer, which comprises a mounting rack, a cooling mechanism for cooling the wafer, and a control module arranged on the cooling mechanism, the positioning rods are arranged on the mounting frame and used for positioning the wafers, the limiting mechanism is arranged on at least one positioning rod, and the rotating mechanism is arranged between the mounting frame and the cooling mechanism. According to the utility model, helium can enter a space formed by the material placing table and the rotating plate in a uniformly distributed manner through the arrangement of the shunt pipe, so that the temperature of the material placing table is uniformly distributed, and the temperature generated on the back surface of a wafer is uniformly and quickly taken away, thereby ensuring that the wafer is kept at a stable temperature in a high-precision processing process such as ion beam etching and the like; and secondly, cooling is achieved through helium, the helium serves as inert gas and is environmentally friendly, meanwhile, the heat conduction performance of the helium is excellent, the cooling process is more efficient, and therefore energy consumption is reduced.

The invention provides an OES end point detection and ion beam etching system, which comprises a shell module, an OES light source module, a glass isolation module and air curtain modules, and is characterized in that at least one air curtain module is arranged at the end, far away from the light source module, of the glass isolation module; the air curtain module forms a physical barrier air curtain through inert gas purging and is used for preventing splashing and preventing the outer side of the glass isolation module from being polluted, so that light beams output by the OES light source module are stronger and higher in precision, the service life of the glass isolation module is greatly prolonged, the maintenance consumption of accessories is reduced, and the production cost is reduced. The air curtain module replaces an existing lengthened pipeline, and the problem that a small pipe diameter blocks a light path in the etching process is solved; helium is used as a gas source of the gas curtain module to cool the etching high temperature of the vacuum chamber, and low-temperature stable optical path monitoring can be realized in a high-temperature process technology.

The invention belongs to the technical field of semiconductors, and particularly relates to an optical waveguide composite film and a preparation method thereof.The optical waveguide composite film comprises a substrate layer, an isolation layer, a waveguide composite body and a film layer which are stacked from bottom to top; wherein the waveguide complex comprises a silicon waveguide and a filling structure filled in the surrounding area of the silicon waveguide, the upper surface of the silicon waveguide and the upper surface of the filling structure are coplanar, and the silicon waveguide is seamlessly attached to the filling structure. According to the preparation method of the optical waveguide composite film, through surface treatment of polishing and ion beam etching, the upper surface of a silicon waveguide of a waveguide composite body is coplanar with the upper surface of a filling structure, the silicon waveguide is seamlessly attached to the filling structure, direct and stable bonding of the waveguide composite body and functional materials such as lithium niobate is achieved, the bonding strength is high, the film is not prone to falling off and breaking, and the service life of the film is prolonged. The yield is high.

This application discloses a wafer-level pattern modification method and an ion beam etching apparatus, applicable to the semiconductor manufacturing field. In this method, a target ion beam voltage is first determined based on the hardness grade of the material to be etched on the wafer surface. An initial pattern is formed on the wafer surface by the material to be etched. Then, based on a first ion beam incident angle and the target ion beam voltage, the initial pattern is modified on one side in a first direction using the ion beam to obtain a first modified pattern. Therefore, only one photolithography step is needed before ion beam etching to form the initial pattern, avoiding low product yield caused by overlay errors. Through ion beam etching, the initial pattern formed by the material to be etched on the wafer surface can be modified on one side in a highly controllable manner in a first direction parallel to the wafer surface, reducing the distance between adjacent patterns and improving the success rate of forming the first modified pattern, thus increasing the yield of products requiring small CD patterns.

The invention discloses high-temperature-resistant tempered glass and a preparation method thereof, and relates to the technical field of tempered glass. The toughened glass is etched by the ion beam and washed by the aqueous alkali to form a silicon atom sparse layer, so that the deposition of the modifier is promoted, and the high temperature resistance and conductivity of the glass are enhanced. 3-amino-2-hydroxybenzaldehyde and 5-bromine-2-(prop-2-ene-1-oxy) aniline are adopted to synthesize polyaniline, the structure of the polyaniline improves the formation of a conductive polymer on the glass surface, and the conductivity and the high temperature resistance are enhanced. Vinylpyrrolidone and sodium dodecyl benzene sulfonate are compounded with a modifier to form a micelle-like structure, so that the reaction time is shortened, and defoaming is realized. Copper ions, Schiff base and hydroxyl form a complex, so that the cross-linking density of a polymer on the surface of the glass is increased, and the high-temperature resistance and the conductivity are further improved.

An embodiment of the present invention increases the etching resistance of a photoresist in an EUV PR / SiON pattern using an ion beam etching apparatus to which grid pulsing is applied, so that the photoresist is etched less and SiON is etched more, thereby improving the etching selectivity. According to an embodiment of the present invention, it is possible to improve the LER through repetition of constant etching and deposition, thereby reducing process defects and enabling damage control.

A patterned magnetoresistive random access memory (MRAM) stack is formed by etching through a plurality of MRAM layers disposed on a substrate by performing a main etch, wherein the main etch includes using ion beam etch (IBE). After the main etch, a gap-fill dielectric material is deposited into the spaces between the patterned MRAM stacks, and the gap-fill dielectric material is selectively etched or otherwise formed to an etch depth above the underlying depth. After forming the gap-fill dielectric material, at least some of the gap-fill dielectric material and any conductive material deposited on sidewalls of the patterned MRAM stack are removed by performing an IBE trim etch.

In some embodiments, the present disclosure relates to a method of performing an etching process. The method includes generating a plasma within a plasma chamber in communication with a processing chamber. Ions from the plasma are accelerated toward a workpiece within the processing chamber to generate an ion beam. The ion beam performs an etching process that etches a material on the workpiece. A by-product from the etching process is moved to directly below one or more baffles within the processing chamber.

The present invention discloses a three-dimensional cross-sectional sample of a packaged chip and a preparation method thereof. The three-dimensional cross-sectional sample preparation method comprises: scanning and analyzing the packaged chip to be tested to determine whether the packaged chip to be tested has an abnormal area; if so, determining a grinding position according to the setting position of the abnormal area to grind and polish the packaged chip to be tested to obtain a first cross-sectional sample; using a focused ion beam to perform ion beam etching of a preset thickness on the target analysis area of the first cross-sectional sample to form a detection space inside the packaged chip to prepare a three-dimensional cross-sectional sample; the target analysis area includes the abnormal area. A three-dimensional cross-sectional sample can be obtained by the above-mentioned three-dimensional cross-sectional sample preparation method, and the three-dimensional cross-sectional sample can be unaffected by grinding, which is conducive to the accurate analysis of microcrack defects in the packaged chip.