Metal etching device and method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 江苏鲁汶仪器股份有限公司
- Publication Date
- 2017-05-17
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The present invention relates to an etching device and method, in particular to a metal etching device and method. Background technique
[0002] With the further proportional reduction of the feature size of semiconductor devices, the traditional flash memory technology will reach the limit of size. In order to further improve the performance of devices, technicians began to actively explore new structures, new materials, and new processes. In recent years, various new types of non-volatile memories have been developed rapidly. Among them, magnetic random access memory (MRAM), with its high-speed read and write capabilities of static random access memory (SRAM), and high integration of dynamic random access memory (DRAM), has far lower power consumption than DRAM, and compared to flash Memory (Flash), with the advantages of no performance degradation as the use of time increases, has attracted more and more attention from the industry, and is conside...