Metal etching device and method

An etching device and metal technology, which is used in the manufacture/processing of electromagnetic devices to achieve the effect of improving the yield
CN106676532AActive Publication Date: 2017-05-17江苏鲁汶仪器股份有限公司

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
江苏鲁汶仪器股份有限公司
Publication Date
2017-05-17

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a metal etching device and method which can be used in a large-scale integrated circuit industrial manufacturing environment. Particularly, by means of the metal etching device and method, in a vacuum uninterrupted environment, magnetic tunnel junctions of a magnetic random access memory (MRAM) are subjected to etching and etching post-processing in a reactive-ion plasma etching chamber and an ion beam etching chamber and then subjected to coating surface protection in a coating chamber, so that the side wall of the magnetic tunnel junctions are free of metal contamination after being etched, the chemical and physical structures of the magnetic tunnel junctions are consistent with the chemical and physical structures before etching, the magnetic tunnel junctions can be taken out from etching equipment and not destroyed by the air environment, and the yield of MRAM devices is effectively increased. In addition, the metal etching device and method are also applicable to etching of resistive random access memories and other metals.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to an etching device and method, in particular to a metal etching device and method. Background technique

[0002] With the further proportional reduction of the feature size of semiconductor devices, the traditional flash memory technology will reach the limit of size. In order to further improve the performance of devices, technicians began to actively explore new structures, new materials, and new processes. In recent years, various new types of non-volatile memories have been developed rapidly. Among them, magnetic random access memory (MRAM), with its high-speed read and write capabilities of static random access memory (SRAM), and high integration of dynamic random access memory (DRAM), has far lower power consumption than DRAM, and compared to flash Memory (Flash), with the advantages of no performance degradation as the use of time increases, has attracted more and more attention from the industry, and is conside...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More