Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof

A super-diffraction and mask technology, applied in the field of nano-processing, to achieve the effect of convenient mask and manufacturing method, good ultraviolet light blocking, and large depth of pattern layer

Inactive Publication Date: 2010-06-09
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a silicon mask for super-diffraction lithography with a line width below 200nm for the problem of depth of the pattern layer that is difficult to solve in the existing super-diffraction lithography mask processin

Method used

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  • Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof
  • Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof
  • Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof

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Embodiment 1

[0026] The first embodiment of the present invention is to make a silicon mask with periodic lines with a period of 100nm and a line width of 50nm. The exposure wavelength is 365nm. The mask includes a transparent quartz substrate and a silicon film pattern on it.

[0027] The mask fabrication steps are as follows figure 1 Shown:

[0028] (1) select quartz material to make ultraviolet light transparent substrate;

[0029] (2) Utilize the magnetron sputtering coating machine to coat a layer of silicon film with a thickness of about 70nm on the transparent quartz substrate;

[0030] (3) Utilize the magnetron sputtering film coater to plate a layer of chromium film with a thickness of 20nm on the upper surface of the silicon film, as a pattern shielding layer in the later etching process;

[0031] (4) Utilize the focused ion beam to directly process the chromium film with a thickness of 20nm, so that periodic nano-line patterns with a period of 100nm and a line width of 50nm ar...

Embodiment 2

[0035] The second embodiment of the present invention is to make a silicon mask with periodic lines with a period of 200nm and a line width of 80nm. The exposure wavelength is 365nm. The mask includes a transparent quartz substrate and a silicon film pattern on it.

[0036] The mask fabrication steps are as follows figure 1 Shown:

[0037] (1) select quartz material to make ultraviolet light transparent substrate;

[0038] (2) utilize a magnetron sputtering coating machine to coat a layer of silicon film with a thickness of about 100 nm on the transparent quartz substrate;

[0039] (3) Utilize the magnetron sputtering film coater to plate a layer of chromium film with a thickness of 30nm on the upper surface of the silicon film, as a pattern shielding layer in the later etching process;

[0040] (4) Utilize the focused ion beam to directly process the chromium film with a thickness of 30nm, so that periodic nano-line patterns with a period of 200nm and a line width of 100nm ...

Embodiment 3

[0044] The second embodiment of the present invention is to make a silicon mask with periodic lines of 64nm and line width of 32nm, and the exposure wavelength is 365nm. The mask includes a transparent quartz substrate and a silicon film pattern on it.

[0045] The mask fabrication steps are as follows figure 1 Shown:

[0046] (1) Select calcium fluoride material to make ultraviolet light transparent substrate;

[0047] (2) Coating a layer of silicon film with a thickness of about 50 nm on the transparent calcium fluoride substrate by using a magnetron sputtering coating machine;

[0048] (3) Utilize the magnetron sputtering film coater to plate a layer of chromium film with a thickness of 10nm on the upper surface of the silicon film, as a pattern shielding layer in the later etching process;

[0049] (4) Utilize the focused ion beam to directly process the chromium film with a thickness of 10nm, so that periodic nano-line patterns with a period of 64nm and a line width of ...

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Abstract

The invention discloses a silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and a manufacturing method thereof. The mask uses a silicon film on an ultraviolet transparent material substrate as a graph layer. The manufacturing method for the silicon mask comprises the following steps: firstly, processing the silicon film with a certain thickness on the substrate to have the ultraviolet transmittance within 5 percent; then, processing a layer of thin chromium film on the surface of the silicon film; preparing a graph with the line width of less than 200 nanometers on the chromium film by using focusing ion beams; etching the silicon film through reaction ion beams by using the silicon film layer as a shielding layer so as to transfer the graph on the chromium film to the silicon film; and finally, corroding the residual chromium film by using chromium solution to form the practical silicon mask with high resolution and great depth of the graph layer. The silicon mask and the processing method solve the technical problem that a chromium mask with great depth of the graph layer and line width of less than 200 nanometers is difficult to manufacture by the focusing ion beams, and have broad application prospect in the nano photoetching technology.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a silicon mask used for super-diffraction lithography with a line width below 200nm and a manufacturing method thereof. technical background [0002] In order to meet the continuous pursuit of smaller line width of integrated circuits, various new nanofabrication technologies have been continuously explored and researched. Compared with commercial lithography equipment (such as 193nm immersion lithography equipment), super-diffraction lithography technology represented by near-field lithography and surface plasmon super-resolution imaging lithography has the advantages of low cost, high efficiency and high resolution. received widespread attention. [0003] One of the technical difficulties in super-diffraction lithography is the processing of mask patterns. This is because the imaging relationship between the superdiffraction lithography mask pattern and the photoresist ...

Claims

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Application Information

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IPC IPC(8): G03F1/08G03F1/22
Inventor 方亮王长涛罗先刚潘丽刘尧刘玲邢卉刘凯鹏
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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